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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
4A, 1200V Ultrafast Diodes
The RURD4120S9A_F085 are ultrafast diodes with
soft recovery characteristics (t
rr
< 70ns). They have low
forward voltage drop and are silicon nitride passivated
ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49036.
Symbol
Features
Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . <70ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC STYLE TO-252
Ordering Information
PART NUMBER PACKAGE BRAND
RURD4120S9A_F0859A_F085 TO-252 UR4120
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RURD4120S9A_F085 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 152
o
C)
4A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
8A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
40 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
50 W
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
10 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175
o
C
Data Sheet March 2009
Qualified to ACE Q101
RoHS Compliant
©2009 Fairchild Semiconductor Corporation 2 RURD4120S9A_F085 Rev. A
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
I
F
= 4A - - 2.1 V
I
F
= 4A, T
C
= 150
o
C - - 1.9 V
I
R
V
R
= 1200V - - 100
µ
A
V
R
= 1200V, T
C
= 150
o
C - - 500
µ
A
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s--70ns
I
F
= 4A, dI
F
/dt = 200A/
µ
s--90ns
t
a
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 40 - ns
t
b
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 28 - ns
Q
RR
I
F
= 4A, dI
F
/dt = 200A/
µ
s - 335 - nC
C
J
V
R
= 10V, I
F
= 0A - 15 - pF
R
θ
JC
--3
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery time.
C
J
= Junction capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
20
0.5
10
0 0.5 1 1.5 2 2.5 3
25oC
175oC
100oC
VR, REVERSE VOLTAGE (V)
0 400 800 1200600 1000
100
0.01
0.1
1
10
IR, REVERSE CURRENT (µA)
200
0.001
25oC
100oC
175oC
RURD4120S9A_F085
©2009 Fairchild Semiconductor Corporation 3 RURD4120S9A_F085 Rev. A
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
0.5
0
45
30
15
75
41
trr
60
t, RECOVERY TIMES (ns)
tb
ta
TC = 25oC, dIF/dt = 200A/µs
0.5
0
60
100
41
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
tb
80
20
trr
ta
40
TC = 100oC, dIF/dt = 200A/µs
0.5
0
25
125
41
trr
tb
100
ta
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
50
75
TC = 175oC, dIF/dt = 200A/µs
5
1
0
125 135 155 175165
2
3
4
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
145
DC
SQ. WAVE
VR, REVERSE VOLTAGE (V)
30
15
00 50 100 150 200
75
CJ, JUNCTION CAPACITANCE (pF)
60
45
RURD4120S9A_F085
©2009 Fairchild Semiconductor Corporation 4 RURD4120S9A_F085 Rev. A
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 20mH
IV
t0t1t2
IL
VAVL
t
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
IL
RURD4120S9A_F085
Rev. I39
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the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
Fairchild®
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FACT Quiet Series™
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OPTOLOGIC®
OPTOPLANAR®
®
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QFET®
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Quiet Series™
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STEALTH™
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VisualMax™
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tm
®
tm
tm
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©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 1 RURD4120S9A_F085 Rev. B
©2009 Fairchild Semiconductor Corporation 5 RURD4120S9A_F085 Rev. A
RURD4120S9A_F085
www.onsemi.com
1
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