MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE RD06HVF1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 MITSUBISHI ELECTRIC 10 Jan 2006
OBSERVE HANDLING PRECAUTIONS
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL PARAMETER CONDITIONS RATINGS UNIT
VDSS Drain to source voltage Vgs=0V 50 V
VGSS Gate to source voltage Vds=0V +/- 20 V
Pch Channel dissipation Tc=25°C 27.8 W
Pin Input power Zg=Zl=50Ω 0.6 W
ID Drain current - 3 A
Tch Channel temperature - 150 °C
Tstg Storage temperature - -40 to +150 °C
Rth j-c Thermal resistance junction to case 4.5 °C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
LIMITS UNIT
SYMBOL PARAMETER CONDITIONS MIN TYP MAX.
IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 10 uA
IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA
VTH Gate threshold Voltage VDS=12V, IDS=1mA 1.9 - 4.9 V
Pout Output power VDD=12.5V, Pin=0.3W, 6 10 - W
ηD Drain efficiency f=175MHz, Idq=0.3A 60 65 - %
Load VSWR tolerance VDD=15.2V,Po=6W(Pin Control)
f=175MHz,Idq=0.3A,Zg=50Ω
Load VSWR=20:1(All Phase)
No destroy -
Note : Above parameters , ratings , limits and conditions are subject to change.
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