FOR USE BY ELECTRICIANS OVERSEAS : Bakes uiA5tGeR (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English translation key given below. RK BM (Tae 05'C) z OR Te) oe RS ph Bl A eee a Te (mA) Pee (nW ) JG () Tew SAH (aA y | Ve) WRK Ae ATOR ire | tues hea | hoe | fan i t # | Beet lho tf Val elma] Vent] ima] tow | toy |Gcio} Gr) | Ge) | o Meteo ely wry Pte = o ee TYPE NUMBER USES MAXIMUM RATINGS BOBS & ORIGINAL MANUFACTURER MATERIAL AND STRUCTURE Icoo MAXIMUM VALUE AND Ves VALUE (CRITERIA FOR MEASURING I czo ) S STANDARD VALUE OF DC/PULSE hee AND Vee I. ( CRITERIA FOR MEASURING DC/PULSE Are ) fl STANDARD VALUE OF kh PARAME- TERS AND BIAS Vee , Ie (CRITERIA FOR MEASURING A PARAMETERS) = oo iy [oo I | _g INDICATES VALUE IN GROUNDED- BASE OPERATION, OTHERWISE VALUE IN EMITTER-GROUNDED OPERATION. fas OF RF CHARACTERISTIC, EXCEPT IN CASE OF * WHICH INDICATES VALUE OF f-. Cos AND roy OF RF CHARACTERIS- TICS EXCEPT IN CASE OF * IN 1r,, COLUMN WHICH INDICATES VALUE OF hie (real) OUTLINE REMARKS :ta>7): COMPLEMENTARY TO -::-- _ a 20) ik kK te (To = 25C) = aA ay % tt (T. = 25C) oh HRV H GO ia | Wh im) Vowo | Vane | Tc | Pe | Ty | tov WAH YMA SIRS <hr] oS fT AY Be | hg | hea | sl | Jet] Ooh te a 4 (V) | CV) | (mA) | (mw) | CC) | GA) | Ven(v) Vee(V)[Ic(mA)] Vea(V)fe(mA)| Aso* | (2) 1010-4] (wa) | (Mc) | (PF) | (a) | % 2SD416|= i|SW Si.TMe| 1500 | 6 | 2A |.,OM.) 150 | Ima | 1500] 5 | 5 | 5.5A 17<0.84S 102 47 | Base) | 250 | 6 | 7A (qo as | 10 | a0 | a | 5 | 3a | 6 | 300\ inca tag <S 30 * 102 | 418 |#8 F|PA | 1000) 5 | SA | 80%.) 150 ] 1mA ] 1000] 15 ] | eA} | yada 102 | 419 Peel o SidDJ | 100 | 6 | 7A | 40% 150 | ima | 100 | 2500] 4 | 7A | 12 | 500 6 * 99 | yr by 4200p | 9 | iz | 6 | 7A (408. 150 | ama | 120 | 2500; 4 | 7A | 12 | -500, | | 6 * a] 7 | waayioow fw | 40] 6 | 7A | fOW.) 150 | ima | 140 | 2000] 4 | 7A] 12 | 800 6 * go, 9 w 492 | til |SW si.TMe| 250 | 6 | 4A | 30%.) 175 | 100 | 150 | 20 | 5 ) 3A | 6 300 | frcR SMB. tr<2uS 30 * | 99 | 1 493) on fH si.tP | 20 | 6 | 4A |, @OW.) 175 | 100 | 150 | 20 | 5 | 3A bes 2 BAS SIMS 99 424| /PA SiTMe | 180 | 5 | 15A |250W.) 150 | 100 | 99 }4~m0| 5 | 2A) 5 | ~2A 5 *) 300 102 | 358554, 1 425} on | | 140 | 5 | 12d |JOOW) a50 | 100 | 60 Jao~uo| 5 | 2A] 5 | 2Aa i 5 *| 220 102 | 358555, 1 426; 0 | # | 120 {| 5 | 12a [00% 150 | 100 | 6o fw~uo] 5 | 2A | 5 | -2a [8 * 2a 102 | 88556, ,| 120 | 5 | 8A 10%) 150 | 100 | 60 |w~o] 5 | 14 | 5 | -1A 7 | 170 102 100 | 5 | 7A |,60%.) 150 | 100 | 50 |4~mo| 5 | 1A | 5 | -1A 7 | 140 102 | 358556, | soo | 6 | 15a | 2O0W.! iso | 5 60 7 15 | 5 | OA tom 20uS tots < 18 MS 102 120 | 10 | SA |,20%.} 150 | 100 | 30 | 60 | 4 1A | 5 |-0.5A 15 * 102 zo | 1 | 7A [008 150 | ico | 30 | 60 | 5 1A | 5 |~0.5A 20 * 102 130 | 10 | 10A | 200") aso | 100 | 30 | 60 | 5 | 1A [{ 5 '-0.5A 15 * 102 250 | 10 | 10A [JOO] 150 | 100 | 30 | 6 | 5 1A] 5 |-0.5a Tas * 102 200 | 10 | 20a | 200M.) iso | 100 | 100 | 60 | 5 | 1A 102 | soo | 10 | 20a [,200W.) a50 | 100 | 100 | 60 | 8 | 1A 102 400 | 10 | 20a (200% | 150 { 100 | 100 | 60 | 6 | 14 102 ~| 600 | 6 | 10a {2080 ) 150 | ima | coo {| 10 | 5 | 6A 102 L100 | 5 | 700 | 900 | 150 | 1 20 | 60~860) 5 50 | 10 | 50 | 100*| 10 294 SEES] 20 | 5 | 12a ]88.]) 150 | 4 1s | 150 | 2 | 500 150* 296 | ( i t | hee | | |