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FDMA1025P Dual P-Channel PowerTrench®MOSFET
©2010 Fairchild Semiconductor Corporation
FDMA1025P Rev.B5www.fairchildsemi.com
1
FDMA1025P
Dual P-Channel PowerTrench® MOSFET
–20V, –3.1A, 155m:
Features
Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A
Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Application
DC - DC Conversion
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage –20 V
VGS Gate to Source Voltage ±12 V
ID
Drain Current -Continuous (Note 1a) –3.1 A
-Pulsed –6
PD
Power Dissipation for Single Operation (Note 1a) 1.4 W
Power Dissipation (Note 1b) 0.7
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
RTJA Thermal Resistance Single Operation, Junction to Ambient (Note 1a) 86
°C/W
RTJA Thermal Resistance Single Operation, Junction to Ambient (Note 1b) 173
RTJA Thermal Resistance Dual Operation, Junction to Ambient (Note 1c) 69
RTJA Thermal Resistance Dual Operation, Junction to Ambient (Note 1d) 151
Device Marking Device Package Reel Size Tape Width Quantity
025 FDMA1025P MicroFET 2X2 7’’ 8mm 3000 units
MicroFET 2X2
16
52
43
S1 G1 D2
D1 G2 S2
S2
G2
D1
D2
G1
S1
PIN 1
D1 D2
1
3
2
6
5
4
Free from halogenated compounds and antimony
oxides
July 2014
FDMA1025P Dual P-Channel PowerTrench®MOSFET
FDMA1025P Rev.B5 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V –20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = –250PA, referenced to 25°C 14 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = –16V, –1
PA
VGS = 0V TJ = 125°C –100
IGSS Gate to Source Leakage Current VGS = ±12V, VDS = 0V ±100 nA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250PA–0.4 –0.9 –1.5 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = –250PA, referenced to 25°C –3.8 mV/°C
rDS(on) Drain to Source On Resistance
VGS = –4.5V, ID = –3.1A 88 155
m:VGS = –2.5V, ID = –2.3A 144 220
VGS = –4.5V, ID = –3.1A,TJ = 125°C 121 220
gFS Forward Transconductance VDS = –5V, ID = –3.1A 6.2 S
Dynamic Characteristics
Ciss Input Capacitance VDS = –10V, VGS = 0V,
f = 1MHz
340 450 pF
Coss Output Capacitance 80 105 pF
Crss Reverse Transfer Capacitance 45 70 pF
Switching Characteristics
td(on) Turn-On Delay Time
VDD = –10V, ID = –3.1A
VGS = –4.5V, RGEN = 6:
510ns
trRise Time 14 26 ns
td(off) Turn-Off Delay Time 13 24 ns
tfFall Time 816ns
Qg(TOT) Total Gate Charge at 4.5V VGS = 0V to –4.5V VDD = –10V
ID = –3.1A
3.4 4.8 nC
Qgs Gate to Source Gate Charge 0.8 nC
Qgd Gate to Drain “Miller” Charge 1.0 nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS=–1.1A (Note 2) –0.8 –1.2 V
trr Reverse Recovery Time IF = –3.1A, di/dt = 100A/Ps17 26 ns
Qrr Reverse Recovery Charge 10 15 nC
ISMaximum Continuous Source-Drain Diode Forward A
–1.1
FDMA1025P Dual P-Channel PowerTrench®MOSFET
FDMA1025P Rev.B5 www.fairchildsemi.com
4
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the
user's board design.
(a) RTJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RTJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RTJA = 69 oC/W when mounted on a 1 in2pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
(d) RTJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0
a)86 oC/W when
mounted on a 1
in2pad of 2 oz
copper.
b)173 oC/W when
mounted on a
minimum pad of 2
oz copper.
c)69 oC/W when
mounted on a 1 in2
pad of 2 oz copper.
d)151 oC/W when
mounted on a
minimum pad of 2 oz
copper.
FDMA1025P Dual P-Channel PowerTrench®MOSFET
FDMA1025P Rev.B5 www.fairchildsemi.com
4
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0123
0
1
2
3
4
5
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -3.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = -2.5V
VGS = -1.8V
VGS =-4.5V
On Region Characteristics Figure 2.
0123456
0
1
2
3
4
5
VGS = -3.5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = -2.5V
VGS = -1.8V
VGS =-4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID =-3.1A
VGS = -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
23456
0
100
200
300
400
500
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= -3.1A
rDS(on),DRAIN TO
SOURCE ON-RESISTANCE (m:)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es i st an ce v s G a te to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
1
2
3
4
5
6
TJ= -55oC
TJ= 25oC
TJ= 150oC
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
TJ = -55oC
TJ = 25oC
TJ= 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce to D ra i n D io d e
Forward Voltage vs Source Current
FDMA1025P Dual P-Channel PowerTrench®MOSFET
FDMA1025P Rev.B5 www.fairchildsemi.com
5
Figure 7.
02468
0
2
4
6
8
10
ID= -3.1A
VDD = -12V
VDD = -8V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
10
100
1000
30
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9. Forward B i a s S afe
Operating Area
0.1 1 10
0.01
0.1
1
10
50
THIS AREA IS
LIMITED BY rDS(on)
100ms
10s
1s
DC
10ms
1ms
100us
SINGLE PULSE
TJ = MAX RATED
RTJA=173oC/W
TA = 25OC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
20
Figure 10.
10-4 10-3 10-2 10-1 100101102103
1
10
100
0.6
VGS = -4.5V
SINGLE PULSE
P(PK), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150 TA
–
125
------------------------
S i n g l e P u l s e M a x i m u m
Power Dissipation
Figure 11. Transient Thermal Response Curve
10-4 10-3 10-2 10-1 100101102
0.001
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
Typical Characteristics TJ = 25°C unless otherwise noted
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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MOSFET
®
FDMA1025P Dual P-Channel PowerTrench
FDMA1025P Rev.B5
6irchildsemi.comwww.fa
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PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
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CTL™
Current Transfer Logic™
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MicroPak™
MicroPak2™
MillerDrive™
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OptoHiT™
OPTOLOGIC®
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PowerXS™
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QFET®
QS™
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RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
仙童 ™
®
™
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Rev. I68
tm
®
MOSFET
®
FDMA1025P Dual P-Channel PowerTrench
irchildsemi.comwww.fa
FDMA1025P Rev.B5 7
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1
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