SILICON EPITAXIAL PLANAR TYPE 1$$352 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm - Small Package - Low Forward Voltage : VF=0.98V(Typ.) = . Fast Reverse Recovery Time : trr=l.6ns(Typ.) a Small Total Capacitance : Cr=0.5pF(Typ.) & oo 3 1 e re n 040.05 - N __- M =25 +90. +01 MAXIMUM RATINGS (Ta=25C) oat eds | 015856 CHARACTERISTIC SYMBOL RATING UNIT Ne Naximum(Peak) Reverse Voltage VR 85 V w) hl - n Reverse Voltage VR 80 V s S Naximum(Peak) Forward Current IPM 200 mA | Hl Average Forward Current Io 100 mA J Surge Current (10ms) IFSM 1 A Power Dissipation P 200* mW ; ; 5 JEDEC > Junction Temperature Tj 125 c EIAS _ Storage Temperature Range Tstg -55~125 c TOSHIBA 1-1E1A * Mounted on a glass epoxy circuit board of 20 <20mm, Weight : 0.004 pad dimension of 4x 4mn. ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP.) MAX.| UNIT VF(1) If=1mnA - | 0.62 - Forward Voltage VF(2) Tp=lLOmA ~ 0.75 - Vv VF(3) [F=100mA - 0.98 | 1.20 = 30% - - . Reverse Current TRL) VR= 30 0-1 uA In(2) | VR=80Vv - - 0.5 Total Capacitance CT Vp=0, f=1MHz2 - 0.5 3.0 pF Reverse Recovery Time trr Ip=10mA, Fig.1 - 1.6 4.0 ns Fig. 1 REVERSE RECOVERY TIME (tyr) TEST CIRCUIT OUTPUT WAVEFORM | WAVEFORM INPUT 0.012F 0 DUT OUTPUT Marking [p= 10mA a x SAMPLING 0 O1 Ip Clip 3 OSCILLOSCOPE ~6V (Rin=50Q) Tp 50ns PULSE GENERATOR lta, (Royt = 500) 11911$$352 Tp ~ Ve Tr - YR E 10 2S < g zy Ta=100 tw a a 75 me = 107% FA Z i s 50 a faa] P > -2 5 2 10 25 = g 5 = & q 10% g z 104 0 0.4 0.8 1.2 16 2.0 0 10 20 30 40 50 60 70 80 90 FORWARD VOLTAGE Vp (V3 REVERSR VOLTAGE Vp (), Cp 1.0 J R f = 1Milz Ta = 25 0.8 S be - 06 na oa Z = O04 ical i < a 0.2 0 0.4 0.3 1 3 10 30-100 REVERSE VOLTAGK Vp CV) 1192