SFH 7222
GaAlAs-IR-Lumineszenzdiode (880 nm) und grüne GaP-LED (565 nm)
GaAlAs-Infrared-Emitter (880 nm) and green GaP-LED (565 nm)
Lead (Pb) Free Product - RoHS Compliant
2007-04-02 1
Wesentliche Merkmale
SMT-Gehäuse mit IR-Sender (880 nm) und
grünem Sender (565 nm)
Geeignet für SMT-Bestückung
Gegurtet lieferbar
Sender und Empfänger getrennt ansteuerbar
Anwendungen
Kombination von Anzeigeelement mit:
Datenübertragung
Fernsteuerung
Infrarotschnittstelle
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
SFH 7222 Q65110A2742 SMT Multi TOPLED®
Features
SMT package with IR emitter (880 nm) and
green emitter (565 nm)
Suitable for SMT assembly
Available on tape and reel
Emitter und detector can be controlled
separately
Applications
Combination of display with:
data transmission
remote control
infrared interface
2007-04-02 2
SFH 7222
Hinweis/Notes
Die angegebenen Grenzdaten gelten für einen Chip, wenn nicht anders angegeben.
The stated maximum ratings refer to one chip, unless otherwise specified.
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
IRED LED
Betriebstemperatur
Operating temperature range Top – 40 … + 100 – 40+ 100 °C
Lagertemperatur
Storage temperature range Tstg – 40 … + 100 – 40 … + 100 °C
Sperrspannung
Reverse voltage VR5 5 V
Durchlassstrom
Forward current IF (DC) 100 30 mA
Stoßstrom
Surge current
tp 10 μs, D = 0
IFSM 2.5 0.5 A
Verlustleistung
Total power dissipation Ptot 180 100 mW
Wärmewiderstand
Thermal resistance junction/ambient1) Rth JA 450 500 K/W
Wärmewiderstand
Thermal resistance junction/ambient2) Rth JA 650 K/W
1) nur ein Chip betrieben / only one chip on
2) beide Chips betrieben / both chips on
SFH 7222
2007-04-02 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
IRED LED
Wellenlänge der Strahlung
Wavelength of peak emission
IF = 100 mA
λpeak 880 565
(IF = 10 mA) nm
Dominantwellenlänge
Dominant wavelength
IF = 10 mA
λdom 570 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
Δλ 80 25
(IF = 10 mA) nm
Abstrahlwinkel
Half angle ϕ ± 60 ± 60 Grad
deg.
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area L × B
L × W0.4 × 0.4 0.25 × 0.25 mm2
Schaltzeiten
Switching times
10%/90%, IF = 100 mA, RL = 50 Ω
tr, tf500 450, 200 ns
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co 25 15 pF
Durchlassspannung
Forward voltage
IF = 10 mA
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
VF
1.5 ( 1.8)
3.0 ( 3.8)
2.0 ( 2.6)
V
Sperrstrom, VR = 5 V
Reverse current IR0.01 (≤ 1)0.01 (≤ 10) μA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe23 mW
Lichtstärke
Luminous intensity
IF = 2 mA
IV>0.25 mcd
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie or Φe
IF = 100 mA
TCI – 0.5 – 0.3 %/K
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SFH 7222
IRED Radiation Characteristics Irel = f (ϕ)
LED Directional Characteristics Srel = f (ϕ)
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 100 mA
TCV– 2 – 1.4 mV/K
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 100 mA
TCλ+ 0.25 0.30 (λpeak)
0.07 dom)nm/K
Strahlstärke Ie der IRED in Achsrichtung
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie of the IRED in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Description Symbol
Symbol Werte
Values Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min. 4 mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 μs
Ie typ. 48 mW/sr
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
IRED LED
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
SFH 7222
2007-04-02 5
IRED
Forward Current IF = f (VF)
TA = 25 °C
Max. Permissible Forward Current
IF = f (TA)
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0123456V8
A
Ι
F
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
Rel Luminous Intensity
IV / IV(10 mA) = f (IF)
TA = 25 °C
Relative Spectral Emission
Irel = f (λ)
10
OHR00878
Ιe
F
Ι
-3
-2
10
-1
10
0
10
1
10
2
10
0
10 10 110 210 4
mA
e
Ι
(100mA)
3
10
0
750
Ιrel
OHR00877
800 850 900 950 nm 1000
20
40
60
80
%
100
λ
Perm. Pulse Handling Capability
IF = f (tp), Duty cycle D = parameter,
TA = 25 °C
10
Ι
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10 s
=D
F
Ι
T
DC
0.005=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
SFH 7222
2007-04-02 6
LED
Forward Current IF = f (VF)
TA = 25 °C
Max. Permissible Forward Current
IF = f (TA)
Forward Voltage VF = f (TA)
IF = f (TA)
10
-1
V
5
green
OHF00577
Ι
F
F
V
0
10
1
10
2
10
5
mA
1.0 1.4 1.8 2.2 2.6 3.0 3.4
1 chip on2 chips on
mA
35
30
25
20
15
10
5
˚C0
I
F
0
OHL00241
20 40 60 80 100
T
A
temp. ambient
T
green
1.4
OHF00581
V
F
˚C
A
T
0 20 40 60 80 100
1.6
1.8
2.0
2.2
V
2.4
Relative Luminous Intensity
IV / IV(10 mA) = f (IF), TA = 25 °C
Wavelength at Peak Emission
λpeak = f (TA), IF = 10 mA
Relative Luminous Intensity
IV / IV(25 °C) = f (IF), IF = 10 mA
V
V (10 mA)
10 -1 0
10 10 12
10
mA
green
10 -3
5
OHF00578
F
Ι
5
-2
10
5
-1
10
0
10
1
10
Ι
Ι
55
green
550
OHF00579
λpeak
˚C
A
T
0 20 40 60 80 100
570
590
610
630
650
nm
690
green
0.0
OHF00582
˚C
A
T
0 20 40 60 80 100
V
V
Ι
Ι
0.4
0.8
1.2
1.6
2.0
(25 ˚C)
Perm. Pulse Handling Capability
IF = f (tp)
Duty cycle D = paramet er, TA = 25 °C
Dominant Wavelength
λdom = f (TA), IF = 10 mA
OHL01686
s10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
DI
TT
P
F
t
P
=
D
=0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
I
F
t
2
10
0.1
p
10
3
mA
green
550
OHF00580
λdom
˚C
A
T
0 20 40 60 80 100
570
590
610
630
650
nm
690
SFH 7222
2007-04-02 7
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Gehäuse / Package weiß, klarer Verguss / white, clear resin
Anschlussbelegung
pin configuration 1: Kathode (cathode) 880nm
2: Anode (anode) 880nm
3: Kathode (cathode) 565nm
4: Anode (anode) 565nm
GEOY7023
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043) 3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Package marking
3.0 (0.118)
3.4 (0.134)
(2.4 (0.095))
0.1 (0.004) (typ.)
0.8 (0.031)
0.6 (0.024)
14
23
2007-04-02 8
SFH 7222
Empfohlenes Lötpaddesign
Recommended Solder Pad
Maße in mm (inch) / Dimensions in mm (inch).
OHLPY439
Padgeometrie für
verbesserte Wärmeableitung
improved heat dissipation
Paddesign for
Lötstoplack
Solder resist
1.1 (0.043)
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
3.3 (0.130)
0.5 (0.020)
7.5 (0.295)
0.4 (0.016)
Cathode marking
Kathoden Markierung / Cu Fläche / 12 mm per pad
2
Cu-area
_
<
3.3 (0.130)
SFH 7222
2007-04-02 9
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C +0 ˚C
-5 ˚C
245 ˚C ±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C -0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2007-04-02 10
SFH 7222
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assu red characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organizatio n.
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incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.