©2000 Fairchild Semiconductor International Rev. A, February 2000
BU508AF
TO-3PF
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 1500 V
VCEO Collector-Emitter Voltage 700 V
VEBO Emitte r -Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 15 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 700 V
BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V
ICES Collector Cut-off Current VCE = 1500V, VBE = 0 1 mA
IEBO Em itter Cut-off Current VEB = 5V, IC = 0 10 mA
hFE * DC Current Gain VCE = 5V, IC = 4.5A 2.25
VCE(sat) * Collector-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = 4.5A, IB = 2A 1.5 V
BU508AF
TV Horizontal Output Applications
1.Base 2.Collector 3.Emitter
1
©2000 Fairchild Semiconductor International
BU508AF
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Vo ltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10
0.1
1
10
100 VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
IC = 2 IB
VBE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
IC = 2 IB
VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
10
100
1000
f = 1MHz
Cob [pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.01
0.1
1
10
100
IC Max. (Continuous)
IC Max. (Pulsed)
DC
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COL L EC TOR - EM ITT E R VOL TA G E
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PD [W], POWER DISSIPATIOAN
TC[oC], CASE TEMPERATURE
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
TO-3PF
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BU508AF
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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QFET™
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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changes at any time without notice in order to improve
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