Y'JIYNPNESRMEK SY UA9 (PCTAR) SILICON NPN TRIPLE DIFFUSED TRANSISTOR ( PCT PROCESS) O *e-FVEREHDA Unit in mm Color TV Video Output Applications 280995 aS OMAR 825 MAX | + BRINE TH. + Voro=300V j ~ 3 3 + SUPSMARERLT; Cop=aepF (Typ.) d < a RY Sys YARBOBY; fp=100MHZ (Typ.) i z a bit A Q 45 So RAGA MAXIMUM RATINGS (Ta=25) oe CHARACTERISTIC SYMBOL | RATING UNIT 2 pase . 3 COLLECTOR (CASE) aeuAae N-AMBAE! Vopo 300 v JEDEC TO39 ab e7e+=iv AME] Voro 300 Vv EIAS TO-5, TB-5B Ziv A+ NS- 2M BE] Vepo 5 v TOSHIBA 2-8B1lA Q39MAX. a uy 4 & B ] Io 150 mA 28c996 . 85 MAX be bg x g y a EB of Ip 150 mA a) 4 ao]lo Al vty 280995 as (4 SH a teu? eRA Po Ww % 280996 Lg a45 = # a B & | 75 150 c 2 REMAX. R ya 1B gE Tete 65~150 c 1%5+02 14.3402 a pain, gO | A 4 . 4 Eh: . rs 3 7- Z| 4 od i Les K PoTRMwH cl boPBrInHEet, Produced by Perfect Crystal Device Technology. 520 i EMITTER 2 BASE 3&3 COLLECTOR (CASE) JEDEC _ EIAT _ TOSHIBA R-OAIA FFRPUYURWMACL ECLA MOUNTING KIT No. Acez6ceM Ye 2sc995 2sc 996 BLECTRICAL CHARACTERISTICS (Ta = 250) SHARACTERISTIC SYMBOL CONDITION MIN.| TYP.]| MAX.] UNIT 2V9 2s Lew RH Icpo Vop=100V, Ip=0 - - Ol | wa zig st L PRR it Ippo Vep=5v. Ig=0 ~ - Lo WA aVvgos.2i VS MMRRE |Voer)ceo | Io=10m, Ip=0 300 - - v aeek KR Me EG hry Vom=10V, Ig=50mA 25 ~ 240 apm eV MMM | Von(sat) | Ic=100mA, Ip=20mA - 10 Vv x ey SOMAIME | Vem(eat) | Io=100ma, Ty= 20mA _ L2 Vv Koevvva YAR fr Vop=10V, Ip= SO0mA 40 100 - MHz ava FHWA Cob Vop-20V, In=0, f=1MAz - 4.2 55 pF A AM MD EH rb ann Tg= RMA - 10 25 | a xr HSwmow TYPE EQUIVALENT CIRCUIT A Hk tb HPLC BASE SPREADING RESISTANCE) * 100 bd Tpp' p! Chle -__O oO o oO oO Braz Bpde Ds eye fe o . o e oo Ppp! 2 < Tphle EL 7F $# ${ (HMITTER RESISTANCE) Cyo'g 3 = 2 7 BE (AMITTER CAPACITANCE) Chote 2 Mf MR A MCREVERSH TRANSFER CAPACITANCE) Teo $ av YX HHH (COLLECTOR RESISTANCE) Coo 8 Uv 2 & & HEH (COLLECTOR CAPACITANCE) Ft. | MARR IY RORY > (PARWARD TRANSFER CONDUCTANCE) 5212sc 995 2sc 996 STATIC CHARACTERISTICS 2 fe 8 \ % > g & oO 5 s e ay a d n 0 100 200 ALOR Li y SABE a Vor(v) Ver(v Li 2 hb COMMON EMITTER Ta= 25 NA+ D3 y BE rye Von 10k Zi # Reb COMMON EMITTER Ig =5mA Ta = 25 rp e (Q) Li, SHH z 3. 8 40 30 50 100 300 2U7R+-riy3RBE Vow (Vv) 522 hpp BKERSEX f Toe Zs SH hpp- Ic Li FB COMMON EMITTER Vop=10V Ta = 25 5 50 39 8 Bie Ig (ma) rye Ic Diy FH COMMON EMITTER Vop=10v Ta =25C 3 10 30 50 29 SR I (ma)2sc 995 2sc 996 Cy e Von Li * Reb COMMON EMITTER Ig =5mA Ta = 25C ZivFBE Cye (PF) 5 3V78-x2253MVBE Vor (VY) Cyc Vor 50 Zi Rib COMMON EMITTER Ig =5mA Ta = 25C 30 b MBSE Cy, (OF) on 1 3 10 30 100 aVgR- 234 R9MBE Von CV) gfe Vor Li Feb COMMON EMITTER Ig=S5mA Ta = 25C 1000 5 100 Beasavex7a 72% Gre ( 1 3 5 10 30 50 100 aV9%-+x3,3MBE Vor (VY) 300 300 Cye ~ Ie Zi 2 Keb COMMON EMITTER Von=10V Ta = 25C Ziy BH Cy. (PF) 10 34 2B Ig (mA) Cye Ico 50 30 Li # eh a COMMON EMITTER a Vor=10V Ta =25C 2 4 a Oo tal ica Li 3 6 10 30 397 38 Ig (ma) 9te Ic 1000 Li FB EMITT S500 COMMON EMITTER A Vop=lov a Q So Ta =25 BH oO oO GBI VeIBYA Gre 3 100 10 30 Ig (mA) 3 5 39 9 Bie 5232sc 995 2sc 996 Tee ~ Vor Li, FEM COMMON EMITTER a Qo Oo 8 Ig=5mA = 300 Ta=25C ~ . oO h 8 100 a & i S n 30 10 1 3.5 10 30 50 100 300 JUPR-X2yF3RBE Vop (Vv) Coe Vor 100 Zl SEH ~ 50 COMMON EMITTER fe cr Ig = 5mA ~~ 30 Ta = 25 o o o i 20 & xy ay 5 A n 3 1 1 3.5 10 30 50 100 300 398-22 3RBH Vom (Vv) f>p - IB 1000 on Zins ett & 500 COMMON EMITTER _ ee 300 Ta = 25 HH & Vop= 30V R f 100 X m > in 30 = 10 A5 -1 -3 -5 Li ,sBit Ip 30 -50 (ma) 10 100 524 Cog (pF) IV7SEE Po (mW) HAA? SB Tee Ico Ll FM COMMON EMITTER g g Vop=10V x Ta =25C o roy a= 1 E & y x n as 1 3 5 10 30 50 37 Si I> (ma) Seca - Ic Zs SEM 50 COMMON EMITTER Vop=10V so Ta = 25 10 5 3 1 as 3 10 30 100 29 2B Ig (ma) Po - Ta 1400 2sc996 1200 1000 280995 800 600 400 25 60 75 lA 100 125 150 175 Ta (C)