SILICON SMALL SIGNAL
N-CHANNEL JFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document No.
10134
Issue
1
Page 1 of
3
2N4391CSM
• Hermetic Surface Mounted Package.
• High Speed Switching.
• Low On Resistance.
• Designed For High Reliability and Space Applications.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage 40V
VGS Gate – Source Voltage -40V
VGD Gate – Drain Voltage -40V
IG Gate Current 50mA
PD Total Power Dissipation at TA = 25°C 300mW
Derate Above 25°C 2mW/°C
TJ Junction Temperature Range -55 to +175°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 500 °C/W
SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4391CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document No.
10134
Issue
1
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
V(BR)GSS Gate – Source
Breakdown Voltage VDS = 0V IG = 1.0µA -40
V
VGS(off) Gate – Source
Cut-off Voltage VDS = 20V ID = 1.0nA -4 -10
IDSS
(1)
Saturation
Drain Current VDS = 20V VGS = 0V 50 150 mA
IGSS Gate Reverse Current
VDS = 0V VGS = -20V -100 pA
TA = 150°C -200 nA
ID(off) Drain Cut-off Current
VDS = 20V VGS = -12V 100 pA
TA = 150°C 200 nA
VDS(on) Drain – Source
On Voltage VGS = 0V ID = 12mA 0.4 V
RDS(on) Drain – Source
On Resistance VGS = 0 ID = 1.0mA 30 Ω
DYNAMIC CHARACTERISTICS
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
Ciss Common – Source
Input Capacitance
VDS = 20V
f = 1.0MHz
VGS = 0V
26
pF
Crss Common – Source Reverse
Transfer Capacitance
VDS = 0V
f = 1.0MHz
VGS = -12V
5
RDS(on) Drain – Source
On Resistance
VGS = 0
f = 1.0KHz ID = 0A 30 Ω
tr Rise Time
VDD = 10V
VGS = 0V
VGSX = -12V
ID(on) = 12mA
5
ns
td(on) Turn-on Delay Time 15
tf Fall Time 15
td(off) Turn-off Delay Time 20
(1) Pulse Width ≤ 380us, δ ≤ 2%
SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4391CSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document No.
10134
Issue
1
Page 3 of
3
MECHANICAL DATA
Dimensions in mm (inches)
2 1
0.51 ± 0.10
(0.02 ± 0.004)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2
.
5
4
±
0
.
1
3
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.40
(0.055)
max.
0.31
(0.012) rad.
3
1.02 ± 0.10
(0.04 ± 0.004)
R0.31
(0.012)
LCC1
Underside View
Pad 1 - Source Pad 2 -Drain Pad 3 - Gate
