RE 25C D MM 8235605 OOO404? S MMSIEG . T-3/-07 PNP Germanium RF Transistor _ AF 106 SIEMENS AKTIENGESELLSCHAF25c 04047 p for input, mixer, and oscillator stages up to 260 MHz The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72 case (18 A 4 DIN 41 876). The leads are electrically insulated from the case. ~- BC Type | Ordering code ROM te z ia " AF 106 | Q60106-X106 Le Re iB L Case 13521" 52 og Serena Approx. weight 0.4g Dimensions in mm Maximum ratings _Collector-emitter voltage -Vceo 18 Vv Coilector-base voltage -Veso 25 Vv Emitter-base voltage Veso 0.3 Vv Collector current Io 10 mA Junction temperature Tj 90 C Storage temperature range Tatg 30 to +75 C Total power dissipation (Tamp = 45 C) Prot 60 mw Thermal resistance Junction to ambient air Renga $750 K/AW Junction to case Rinse $400 K/W Static characteristics (Tam, = 25C) Voe Ic ~Ig hee Ver , mA | yA Ic/Ig Vv 12 1 20 (<40) 50 (> 25) 0.325 (0.25 to 0.38) 6 2 29 70 0.34 (0.28 to 0.4) Collector cutoff current (Vego = 12 V) lego 0.5 (<10) yA Collector-base breakdown voltage (Jcpo = 100 pA) Vieaycao | >25 v Collector-emitter breakdown voltage . (~Iceo = 500 pA) Vericeo | >18 V Emitter-base breakdown voltage . (~Zeno = 100 pA) ~Vierieso | >9.3 V wie ah mae ha dhath . . 93 sieee ont 5 ; 11523 0-06 AL mtg pneu MmaC IL mene eh wi btere adel Reda, 0d Vike he ATE Be wen aKa Cle A od mak BE yee Bidet25C D MM 8235405 COONO4S 7 MMSIEG . 490 UtUTO SIEMENS AKTIENGESELLSCHAF Dynamic characteristics (Tamp = 25C) Operating point: Ig = 1 mA; Veg or Vog = 12 V Transition frequency (f = 100 MHz) fr sings _ fy Max. frequency of osclation| fe = lee Ton Con ) finax Small signal current gain (f = 1 kHz) hte Noise figure (f = 200 MHz; Rg = 60 Q) NF Reverse transfer capacitance (f = 450 kHz) -Ci2e Feedback time constant (f = 2.6 MHz) lov * Coc Operating point: Ig = 3 MA; Vog = 10 V f = 200 MHz; R, = 920 Q Power gain (measured in circuit shown below) Gob Four-pole characteristics: wie = 1MA; Veg = 12 V; f = 200 MHz itp = 31 mS 912b =OmS | vain] = 27 mS bi = -12 mS bizp = 0,5 mS Pop = 115 C11p = 9,6 pF C12b = ~ 0,4 pF -I, = 1 mA; -Vcg = 6 V; f = 100 MHz 911b =.36 mS 912b = 0,04 mS 921b = -27 mS bith = -6 MS biap = -0,48 mS boyy = 20 mS Test circuit for power gain at f= 200 MHz D - AF 106 3/07 220 MHz 1.2 GHz 65 (> 30) - 5.5 (<7.5) dB 0.45 pF 6 psec 17.5 (> 14) dB G22 = 0,15 mS boo = 1,9 mS C22 = 1,5 pF 922 = 0,09 mS Doo = 1 mS 602 2nF Ly at C Chl []uc 09 =200 MHZ | ' \ : 1 ) 3 Vee Ly = 3 turns; d = 1 mm; D = 6.5 mm Cx = 1.5 to pF so that A, = 9209 L2 = 2turns;d = 1mm;D=6.5 mm C; = 6.5 to 18 pF L3 = L4 = 20 turns 0.5 Culs Cz = 9.5 to 20 pF on core B63310-K1-Al2.3 Cy= 3to10 pF 94 a Same 152 D-07 Bi Bat ee ee 4 eo ape g pels seman aafbillaly aps ae bp25C D MM 235608 GOO4O4S 4 MMSIEG | 7C 04049 D SIEMENS AKTIENGESELLSCHAF AF 106 Total parm. power dissipation varsus temperature Prot = (7); Ain = parameter mw 80 Prot 60 0 60 100C Collector current Ic = f (Vas) Vor = GV (common emitter configuration) 12 10 ~|h Ie 0 oo 60206 03 ~> Vee yous ; , 1525 D-08 x cty T3/-07 Collector cutoff current varsus temperature Icgo = F (Tamb) -Veno =12V i 0 60 fore limb Callector current [ = f (fg) Voge =5V mA (common emitter configuration) a 10 a mecamne mL ales Yo sae nee otha.eSC D MM 4235605 noo4osa 5 MESIEG _ STEMENS AKTIENGESELLSCHAF 22 U+u2U - AF 106 Output characteristics Jc = f (Vee); Jy = parameter (common emitter configuration) AF 106 2 10 le 0 6 10V Nee Optimum power ar gain Googe = F(A Vog = 6 V3 ~Ig = (common emitter configuration) AF 106 28a Sp opt 5 MHz 1526 D-09 F- 3/-07 Output characteristics Ig = f (Veg); Vee = parameter (common emitter configuration) mA a AF 106 12 Ig | 10 8 6 4 2 0 0 10V Vee Nolse figure versus frequency NF = (f); -Vog =12 V; -Ig = 1mA; Rg =602 {common base configuration) dB AF 106 ot? tn! ' 0? 403 MHz Re eNO debi) Qn aAL . a - rr eee 1 @5C D MM 8235605 - poouoss ? MESIEG. SIEMENS AKTIENGESELLSCHAF (0 2. AF 106 T-3/- 87 Smail signat short circuit Input Transition frequency admittance Vite fr =f (Ich; Veg = parameter {common emitter configuration) MHz WA a4 ft ot an =U \) Vee 3V t eo LL A Vt , 200 | 100 0 0 1 a 3 4 5 6mA 0 10 20 30 v 28 e t ~Ite Small signal short circuit reverse Small signal short circuit forward transfer admittance Yize transfer admittance Yor, ms {common emitter configuration) (commen emitter configuration) 02 q Die 02 -O4 ~H8 08 ~10 08-05-06 -03 -02 01 0 Ol O2ms -2 0 @ 4s 60 80 WO 120ms ~ Iu rd 926 whe cl 97 (1527-10 =~ n Woncaadatt othe 1a tag cae tad Mera ce ye roe ah Hale aou 25C D MM 8235605 O0040S2 4 MHSIEG 7-3/-O7 usu ng SIEMENS AKTIENGESELLSCHAF AF 106 Small signal short circuit input Small signal short circuit reverse admittance Yup transfer admitiance Yi2p (common base configuration) (commen base configuration) ms 10V. l : amctdy 2 f=hO MHZ 40 700HH2 0 20 0 866 68 = 100 120m -05 0 0,5mS Fray , > 9405 Small signal short circuit forward Small signal short circult output transfer admittance Y21p - admittance Y22p (common base configuration) {commen emitter and base configuration) ms ms 140 30 420 a) Pn fal) | 80 60 2,0 40 20 0 -20 w TQOMHz -4 -60 40MHZ -80 100 0 140 ~120 -100 -80 -60 -40 -20 0 20ms _ 10 ~~" @ 98 im ee el tn. . . a . 152 8 D=- lL ; : ae | ee : . eS Lage 2