NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 FEB 94
FEATURES
* 150 Volt VCEO
* 1 Amp continuous current
* Low saturation voltage
*P
tot= 1 Watt
REFER TO ZTX655 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipationat Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150 V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 150 V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=100µA, IC=0
Collector Cut-Off
Current
ICBO 100 nA VCB
=125V, IE=0
Emitter Cut-Off Current IEBO 100 nA VEB
=3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 0.5
0.5
V
V
IC=500mA, IB=50mA*
IC=1A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.1 V IC=500mA, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on) 1 V IC=500mA, VCE
=5V*
Static Forward Current
Transfer Ratio
hFE 50
50
20
IC=10mA, VCE
=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
Transition
Frequency
fT30 MHz IC=10mA, VCE
=20V
f=20MHz
Output Capacitance Cobo 20 pF VCB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
FXT655
3-49
B
C
E
