BC807A Silicon PNP Epitaxial Transistor
Description: The BC807A is designed for audio frequency general amplifier applications.
Features: ●Excellent hFE Linearity
●Complementary to BC817A
Chip Appearance
Chip Size 440um×440um
Chip Thickness 210±20um
Base 110um×110um
Bonding Pad Size
Emitter 110um×110um
Front Metal Al
Backside Metal Au
Scribe line width 50um
Wafer Size 6 inch
Electrical Characteristics( Ta=25℃)
Characteristic Symbol Test Condition Min Max Unit
Collector Cutoff Current ICBO VCB=-45V, IE=0 -0.1 uA
Emitter Cutoff Current IEBO VEB=-5V, IC=0 -0.1 uA
Collector-Base Breakdown Voltage BVCBO IC=-0.1mA -50 V
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA -45 V
Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA -5.0 V
DC Current Gain hFE VCE=-1V, IC=-100mA 120 560
Collector Saturation Voltage VCE(sat) IC=-500mA,IB=-50mA -0.6 V
BC807
A
Jan 2005 Version :0.0 Page 1 of 1
