©1993
DATA SHEET
MOS FIELD EFFECT TRANSIST OR
3SK222
FEATURES
• The Characteristic of Cross-Modulation is good.
CM = 92 dB
µ
TYP. @ f = 200 MHz, GR = –30 dB
• Low Noise Figure: NF1 = 1.2 dB TYP. (f = 200 MHz)
NF2 = 1.0 dB TYP. (f = 55 MHz)
• High Power Gain: GPS = 23 dB TYP. (f = 200 MHz)
• Enhancement Type.
• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.
• Automatically Mounting: Embossed Type Taping
• Small Package: 4 Pins Mini Mold
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage VG1S ±8 (±10)*1 V
Gate2 to Source Voltage VG2S ±8 (±10)*1 V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage VG2D 18 V
Drain Current ID25 mA
Total Power Dissipation PD200 mW
Channel Temperature Tch 125 °C
Storage Temperature Tstg –55 to +125 °C
*1 RL ≥ 10 kΩ
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
Document No. P10574EJ2V0DS00 (2nd edition)
(Previous No. TD-2267)
Date Published August 1995 P
Printed in Japan 1989
2.8
+0.2
–0.3
1.5
+0.2
–0.1
0.4
+0.1
–0.05
0.4
+0.1
–0.05
(1.9)
0.950.85
(1.8)
2.9±0.2
0.6
+0.1
–0.05
0.4
+0.1
–0.05
2
3
1
4
5° 5°
5° 5°
0.8
1.1
+0.2
–0.1
0.16
+0.1
–0.06
0 to 0.1
1. Source
2. Drain
3. Gate 2
4. Gate 1
PACKAGE DIMENSIONS
(Unit: mm)
3SK222
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Drain to Source Breakdown BVDSX 18 V VG1S = VG2S = –2 V, ID = 10
µ
A
Voltage
Drain Current IDSX 0.01 8.0 mA VDS = 6 V, VG2S = 3 V, VG1S = 0.75 V
Gate1 to Source Cutoff VG1S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10
µ
A
Voltage
Gate2 to Source Cutoff VG2S(off) 0 +1.0 V VDS = 6 V, VG2S = 3 V, ID = 10
µ
A
Voltage
Gate1 Reverse Current IG1SS ±20 nA VDS = 0, VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current IG2SS ±20 nA VDS = 0, VG1S = 0, VG2S = ±8 V
Forward Transfer |yfs| 15 19.5 mS VDS = 5 V, VG2S = 4 V, ID = 10 mA
Admittance f = 1 kHz
Input Capacitance Ciss 3.6 4.3 5.0 pF
Output Capacitance CDSS 1.0 1.5 2.0 pF
Reverse Transfer Crss 0.02 0.03 pF
Capacitance
Power Gain GPS 21.0 23.0 dB
Noise Figure 1 NF1 1.2 2.0 dB
Noise Figure 2 NF2 1.0 2.0 dB VDS = 6 V, VG2S = 4 V, ID = 10 mA
f = 55 MHz
IDSX Classification
Class V21/VBA*V22/VBB*
Marking V21 V22
IDSX (mA) 0.01 to 3.0 1.0 to 8.0
* Old specification/New specification
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 4 V, ID = 10 mA
f = 200 MHz
3SK222
3
TYPICAL CHARACTERISTICS (TA = 25 °C)
V
DS
– Drain to Source Voltage – V
I
D
– Drain Current – mA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
400
300
200
100
25 50 75 100 125
P
T
– Total Power Dissipation – mW
V
G2S
= 3 V
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
20
15
10
5
V
G1S
= 1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
0.8 V 0.6 V
V
G1S
– Gate1 to Source Voltage – V
I
D
– Drain Current – mA
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
25
20
15
10
5
3 6 9 12 15
0.5 1.0 1.5 2.0 2.5
V
DS
= 6 V
V
G1S
– Gate1 to Source Voltage – V
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
40
32
24
16
8
0.5 1.0 1.5 2.0 2.5
V
DS
= 6 V
f = 1 kHz
I
D
– Drain Current – mA
|y
fs
| – Forward Transfer Admittance – mS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
40
32
24
16
8
4 8 12 16 20
0
0 0
0 0
7.0
6.0
5.0
4.0
3.0
2.0 0 1.0 2.0 3.0 4.0
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
iss
– Input Capacitance – pF
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4 V)
f = 1 MHz
–1.0
V
G2S
= 4 V
3.5 V
3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
G2S
= 4 V 3.0 V
2.5 V
2.0 V
1.5 V
1.0 V
V
DS
= 6 V
f = 1 kHz
V
G2S
= 4 V
3.5 V
3.0 V
2.0 V
1.5 V
2.5 V
1.0 V
3.5 V
3SK222
4
2.5
2.0
1.5
1.0
0.5
00 1.0 2.0 3.0 4.0
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
C
OSS
– Output Capacitance – pF
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4 V)
f = 1 MHz
–1.0
20
10
0
–10
–20
0 2.0 4.0 6.0 8.0
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
V
G2S
– Gate2 to Source Voltage – V
G
PS
– Power Gain – dB
I
D
= 10 mA
(at V
DS
= 6 V
V
G2S
= 4 V)
f = 200 MHz
–2.0
G
PS
NF
10
5
0
N
F
– Noise Figure – dB
3SK222
5
NF TEST CIRCUIT AT f = 55 MHz
INPUT
50 Ω3.3 kΩ
27 pF
1 000 pF
1 500 pF
47 k
Ω
2.2 kΩ
47 kΩ
1 000 pF
27 pF
1 500 pF
V
G1S
V
G2S
V
DS
RFC
Ferrite
Beads
OUTPUT
50 Ω
3.3 kΩ
GPS AND NF TEST CIRCUIT AT f = 200 MHz
V
G2S
1 000 pF
22 kΩ
1 000 pF Ferrite Beads
7 pF OUTPUT
1 000 pF
15 pF15 pF
1 000 pF
INPUT 7 pF
50 Ω50 Ω
1 000 pF
L
3
L
2
L
1
22 k
Ω
1 000 pF
V
G1S
V
DS
L
1
: 0.6 mm U.E.W 7 mm 3 T
L
2
: 0.6 mm U.E.W 7 mm 3 T
L
3
: RFC 2.2 H
1 000 pF
φ
φφ
φ
µ
2
3SK222
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document.
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copyrights or other intellectual property rights of NEC Corporation or others.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
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device before using it in a particular application.
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Anti-radioactive design is not implemented in this product.
M4 94.11