NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain-Bandwidth Product D Excellent Linearity of hFE D Fast Switching Time Applications: D Display Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 100V, IE = 0 - - 1.0 A Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 1.0 A DC Current Gain hFE VCE = 5V, IC = 500mA 140 - 240 VCE = 5V, IC = 3A 40 - - VCE = 10V, IC = 500mA - 180 - MHz - 130 - MHz Gain-Bandwidth Product NTE2515 NTE2516 fT Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Output Capacitance NTE2515 Cob Test Conditions VCB = 10V, f = 1MHz NTE2516 Collector Emitter Saturation Voltage NTE2515 VCE(sat) IC = 2A, IB = 200mA NTE2516 Base Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 200mA Min Typ Max Unit - 40 - pF - 65 - pF - 150 400 mV - 200 500 mV - 0.9 1.2 V Collector Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 120 - - V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 100 - - V Emitter Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 6 - - V - 100 - ns - 900 - ns - 800 - ns - 50 - ns Turn-On Time ton Storage Time NTE2515 tstg VCC = 25V, VBE = -5V, 10IB1 = -10IB2 = IC = 2A, Pulse Width = 20s, Duty Cycle 1%, Note 1 NTE2516 Fall Time tf Note 1. For NTE2514, the polarity is reversed. .106 (2.7) .315 (8.0) .433 (11.0) C E B .610 (15.5) .094 (2.4)