NTE2515 (NPN) & NTE2516 (PNP)
Silicon Complementary Transistors
High Current Switch
Features:
DLow Collector Emitter Saturation Voltage
DHigh Gain–Bandwidth Product
DExcellent Linearity of hFE
DFast Switching Time
Applications:
DDisplay Drivers
DHigh Speed Inverters
DConverters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
TA = +25°C 1.2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +25°C 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 100V, IE = 0 – – 1.0 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA
DC Current Gain hFE VCE = 5V, IC = 500mA 140 – 240
VCE = 5V, IC = 3A 40 – –
Gain–Bandwidth Product
NTE2515 fTVCE = 10V, IC = 500mA – 180 – MHz
NTE2516 – 130 – MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Output Capacitance
NTE2515 Cob VCB = 10V, f = 1MHz –40 –pF
NTE2516 –65 –pF
Collector Emitter Saturation Voltage
NTE2515 VCE(sat) IC = 2A, IB = 200mA –150 400 mV
NTE2516 –200 500 mV
Base Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 200mA –0.9 1.2 V
Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 120 – – V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞100 – – V
Emitter Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6– – V
Turn–On Time ton VCC = 25V, VBE = –5V, –100 –ns
Storage Time
NTE2515 tstg 10IB1 = –10IB2 = IC = 2A,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1 –900 –ns
NTE2516 Duty Cycle
≤
1%, Note 1 –800 –ns
Fall Time tf–50 –ns
Note 1. For NTE2514, the polarity is reversed.
.315 (8.0)
.094 (2.4)
.433
(11.0)
.610
(15.5)
.106 (2.7)
ECB
