Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V T C = 80 C IC,nom. 25 A T C = 25 C IC 50 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80C ICRM 50 A Gesamt-Verlustleistung total power dissipation T C=25C, Transistor Ptot 200 W VGES +/- 20V V IF 25 A IFRM 50 A I2t 230 A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 25A, VGE = 15V, Tvj = 25C VCE sat typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V IC = 25A, VGE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 1mA, VCE = VGE, T vj = 25C Gateladung gate charge VGE = -15V...+15V QG - 0,26 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 1,65 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - 0,11 - nF VCE = 1200V, VGE = 0V, Tvj = 25C ICES Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Mark Munzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) IGES - 2 78 A - 200 - A - - 400 nA Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Charakteristische Werte / Characteristic values min. typ. max. - 0,06 - s - 0,07 - s - 0,05 - s - 0,05 - s - 0,27 - s - 0,32 - s - 0,03 - s - 0,06 - s Eon - 3,3 - mWs Eoff - 2,9 - mWs ISC - 220 - A LsCE - 60 - nH RCC`+EE` - 8,0 - m min. typ. max. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C td,on VGE = 15V, RG = 33, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C tr VGE = 15V, RG = 33, T vj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C td,off VGE = 15V, RG = 33, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 25A, VCC = 600V VGE = 15V, RG = 33, T vj = 25C tf VGE = 15V, RG = 33, T vj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 25A, VCC = 600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 25A, VCC = 600V, VGE = 15V Kurzschluverhalten SC Data RG = 33, T vj = 125C, LS = 130nH RG = 33, T vj = 125C, LS = 130nH tP 10sec, VGE 15V, RG = 33 T Vj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip T C=25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 25A, VGE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 25A, - diF/dt = 650A/sec VF IF = 25A, VGE = 0V, Tvj = 125C VR = 600V, VGE = -15V, Tvj = 25C IRM VR = 600V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 25 - A - 32 - A IF = 25A, - diF/dt = 650A/sec VR = 600V, VGE = -15V, Tvj = 25C Qr VR = 600V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy - - 2,5 - As - 5,4 - As - 1 - mWs - 2,2 - mWs IF = 25A, - diF/dt = 650A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C 2(8) Erec Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,6 K/W - - 1 K/W RthCK - 0,02 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature T vj - - 150 C Betriebstemperatur operation temperature T op -40 - 125 C Lagertemperatur storage temperature T stg -40 - 150 C 6 Nm Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 CTI comperative tracking index 225 M1 Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque terminals M6 Gewicht weight 3 M2 Nm G 180 Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls g Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 50 45 Tj = 25C 40 Tj = 125C IC [A] 35 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125C 50 VGE = 17V 45 VGE = 15V VGE = 13V 40 VGE = 11V VGE = 9V IC [A] 35 VGE = 7V 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 50 45 Tj = 25C 40 Tj = 125C IC [A] 35 30 25 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 50 45 Tj = 25C 40 Tj = 125C IF [A] 35 30 25 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =33 , VCE = 600V, Tj = 125C 9 Eoff 8 Eon Erec 7 E [mJ] 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 270 300 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , IC = 25A , VCE = 600V , Tj = 125C 16 Eoff 14 Eon Erec 12 E [mJ] 10 8 6 4 2 0 0 30 60 90 120 150 180 210 240 RG [ ] 6(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 10 ZthJC [K / W] 1 Zth:Diode Zth:IGBT 0,1 0,01 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 117,12 394,24 31,28 57,36 0,009 0,045 0,073 0,229 59,25 436,14 387,87 116,74 0,003 0,022 0,064 0,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 33 Ohm, Tvj= 125C 60 50 IC [A] 40 IC,Modul IC,Chip 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM25GD120DLCE3224 8(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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