BSM25GD120DLCE3224 - Eupec Power Semiconductors

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage VCES 1200 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 25 A

DC-collector current TC = 25 °C IC50 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 50 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 200 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF25 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 50 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t230 A2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 25A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V

collector-emitter saturation voltage IC = 25A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung

gate threshold voltage IC = 1mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V

Gateladung

gate charge VGE = -15V...+15V QG- 0,26 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies - 1,65 - nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,11 - nF

Kollektor-Emitter Reststrom VCE = 1200V, VGE = 0V, Tvj = 25°C ICES -278

µA

collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125°C - 200 - µA

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA

prepared by: Mark Münzer date of publication: 09.09.1999

approved by: M. Hierholzer revision: 2

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Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 25A, VCC = 600V

turn on delay time (inductive load) VGE = ±15V, RG = 33Ω, Tvj = 25°C td,on - 0,06 - µs

VGE = ±15V, RG = 33Ω, Tvj = 125°C - 0,07 - µs

Anstiegszeit (induktive Last) IC = 25A, VCC = 600V

rise time (inductive load) VGE = ±15V, RG = 33Ω, Tvj = 25°C tr- 0,05 - µs

VGE = ±15V, RG = 33Ω, Tvj = 125°C - 0,05 - µs

Abschaltverzögerungszeit (ind. Last) IC = 25A, VCC = 600V

turn off delay time (inductive load) VGE = ±15V, RG = 33Ω, Tvj = 25°C td,off - 0,27 - µs

VGE = ±15V, RG = 33Ω, Tvj = 125°C - 0,32 - µs

Fallzeit (induktive Last) IC = 25A, VCC = 600V

fall time (inductive load) VGE = ±15V, RG = 33Ω, Tvj = 25°C tf- 0,03 - µs

VGE = ±15V, RG = 33Ω, Tvj = 125°C - 0,06 - µs

Einschaltverlustenergie pro Puls IC = 25A, VCC = 600V, VGE = 15V

turn-on energy loss per pulse RG = 33Ω, Tvj = 125°C, LS = 130nH Eon - 3,3 - mWs

Abschaltverlustenergie pro Puls IC = 25A, VCC = 600V, VGE = 15V

turn-off energy loss per pulse RG = 33Ω, Tvj = 125°C, LS = 130nH Eoff - 2,9 - mWs

Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 33Ω

SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 220 - A

Modulinduktivität

stray inductance module LsCE - 60 - nH

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 8,0 - mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF = 25A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V

forward voltage IF = 25A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 25A, - diF/dt = 650A/µsec

peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM -25-A

VR = 600V, VGE = -15V, Tvj = 125°C -32-A

Sperrverzögerungsladung IF = 25A, - diF/dt = 650A/µsec

recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Qr- 2,5 - µAs

VR = 600V, VGE = -15V, Tvj = 125°C - 5,4 - µAs

Abschaltenergie pro Puls IF = 25A, - diF/dt = 650A/µsec

reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C Erec - 1 - mWs

VR = 600V, VGE = -15V, Tvj = 125°C - 2,2 - mWs

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Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

Thermische Eigenschaften / Thermal properties min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,6 K/W

thermal resistance, junction to case Diode/Diode, DC - - 1 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink pro Modul / per module

λPaste = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,02 - K/W

Höchstzulässi

e Sperrschichttemperatur

maximum junction temperature Tvj - - 150 °C

Betriebstemperatur

operation temperature Top -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 150 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation AL2O3

CTI

comperative tracking index 225

Anzugsdrehmoment f. mech. Befestigung M1 3 6 Nm

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 M2 Nm

terminal connection torque

Gewicht

weight G 180 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

3(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

IC [A]

VCE [V]

IC [A]

VCE [V]

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

Tj = 25°C

Tj = 125°C

Ausgangskennlinie (typisch) I

C = f (VCE)

Output characteristic (typical) VGE = 15V

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 17V

VGE = 15V

VGE = 13V

VGE = 11V

VGE = 9V

VGE = 7V

Ausgangskennlinienfeld (typisch) I

C = f (VCE)

Output characteristic (typical)

Tvj = 125°C

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Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

IC [A]

VGE [V]

IF [A]

VF [V]

56789101112

Tj = 25°C

Tj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical)

VCE = 20V

0,0 0,5 1,0 1,5 2,0 2,5 3,0

Tj = 25°C

Tj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) I

F = f (VF)

Forward characteristic of inverse diode (typical)

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Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

E [mJ]

IC [A]

E [mJ]

RG [Ω

ΩΩ

Ω]

0 5 10 15 20 25 30 35 40 45 50

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=15V, Rgon = Rgoff =33 Ω

ΩΩ

Ω, VCE = 600V, Tj = 125°C

0 30 60 90 120 150 180 210 240 270 300

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=15V , IC = 25A , VCE = 600V , Tj = 125°C

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Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

ZthJC

[K / W]

t [sec]

i 1234

ri [K/kW] : IGBT 117,12 394,24 31,28 57,36

τi [sec] : IGBT 0,009 0,045 0,073 0,229

i [K/kW] : Diode 59,25 436,14 387,87 116,74

τi [sec] : Diode 0,003 0,022 0,064 0,344

IC [A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 33 Ohm, Tvj= 125°C

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

0 200 400 600 800 1000 1200 1400

IC,Modul

IC,Chip

0,01

0,1

0,001 0,01 0,1 1 10 100

Zth:Diode

Zth:IGBT

7(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM25GD120DLCE3224

8(8) Seriendatenblatt_BSM25GD120DLC-E3224.xls

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