SIEMENS BAT 15-03W Silicon Schottky Diode DBS mixer applications to 12 GHz * Low noise figure 2 Low barrier type vPSOS176 ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking | Ordering Code Pin Configuration Package BAT 15-03WP/white |Q62702-A1104 1=A l2 =C | SOD-323 Maximum Ratings Parameter Symbol! Values Unit Diode reverse voltage Vr 4 Vv Forward current Ie 100 mA Total power dissipation Ts = 70C Prot 100 mw Operating ternperature range Top - 55 ... + 150 C Storage temperature Fgtg - 55... + 150 Thermal Resistance Junction ambient 1) Finda <770 K/W Junction - soldering point Pings $ 690 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm? Cu Semiconductor Group 267 03.96SIEMENS BAT 15-030 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC characteristics Breakdown voltage Var) Vv er) =5 A 4 - - Forward voltage Ve le=1mMA - 0.23 0.32 fe =10 mA - 0.32 0.41 AC characteristics Diode capacitance Cr pF Va =0,f=1MHz - - 0.35 Differential forward resistance Ae Q le 10mA/ 50 mA - 5.5 - Semiconductor Group 268 03.96SIEMENS BAT 15-03W Forward Current /e = (Ve) Reverse current /p = f(T) 102 BAT 15-099 EHD07079 105 BAT 15-099 HDO7081 [ F ma HA T= 125C 10? 10! 10 10! 10 -2 -t 1000 05 v1.0 1% 9 1 2 3. VO e V, m Vp Diode capacitance Cy = f (Va) f= 1MHz BAT 15-099 EHDO7082 0.5 Cc; pF to. 0.3 0.2 0.1 0.0 Semiconductor Group 269 03.96