IRLL2705PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.061 V/°C Reference to 25°C, ID = 1mA
0.040 VGS = 10V, ID = 3.8A
0.051 ΩVGS = 5.0V, ID = 3.8A
0.065 VGS = 4.0V, ID = 1.9A
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.1 S VDS = 25V, ID = 1.9A
25 VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage -100 VGS = -16V
QgTotal Gate Charge 32 48 ID = 3.8A
Qgs Gate-to-Source Charge 3.5 5.3 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 9.7 14 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time 6.2 VDD = 28V
trRise Time 12 ns ID = 3.8A
td(off) Turn-Off Delay Time 35 RG = 6.2Ω
tfFall Time 22 RD = 7.1Ω, See Fig. 10
Ciss Input Capacitance 870 VGS = 0V
Coss Output Capacitance 220 pF VDS = 25V
Crss Reverse Transfer Capacitance 92 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V
trr Reverse Recovery Time 58 88 ns TJ = 25°C, IF = 3.8A
Qrr Reverse RecoveryCharge 140 210 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
30
0.91
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 25V, starting TJ = 25°C, L = 15mH
RG = 25Ω, IAS = 3.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.