HITANO ENTERPRISE CORP.
RL251 THRU RL257
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE RANGE – 50 to 1000 Volts CURRENT – 2.5 Amperes
FEATURES
* Low cost
* Low leakage
* Low forward voltage dro p
* High current capability
MECHANICAL DATA
*Case: Molded plastic
*Epoxy: UL 94V -0 rate flame retardant
*Lead: MiL-STD-202E,Method 208 guaranteed.
*Polarity: Color band denot es cathode end
*Mounting position: Any
*Weight: 0.54gram
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless
otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive
load.
For capacitive load, derate current by 20%
Dimensions in inches and (millimeters)
SYMBOL RL251 RL252 RL253 RL254 RL255 RL256 RL257 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum Average Forward Rectified
Current
at TA = 75℃ IO 2.5 Amps
Peak Forward Surge Current, 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC Method) IFSM 150 Amps
Maximum Instantaneous Forward Voltage
at 2.5ADC VF 1.0 Volts
@ TA=25℃5.0
Maximum DC Reverse
Current at Rated DC Blocking
Voltage @ TA=100℃50 μAmps
Maximum Full Load Reverse Current
Average, Full Cycle .375*(9.5mm) lead
length at TL = 75℃
IR
30 μAmps
Typical Junctio n C apacitance (N ote ) CJ 35
pF
Typical Therm al Resi st anc e RΘJA 35 ℃/W
NOTES: 1. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
