W25Q16BV
Publication Release Date: July 08, 2010
- 1 - Revision F
16M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
W25Q16BV
- 2 -
Table of Contents
1. GENERAL DESCRIPTION ............................................................................................................... 5
2. FEATURES ....................................................................................................................................... 5
3. PIN CONFIGURATION SOIC 150 / 208-MIL .................................................................................... 6
4. PAD CONFIGURATION WSON 6X5-MM ........................................................................................ 6
5. PAD CONFIGURATION PDIP 300-MIL ............................................................................................ 7
6. PIN DESCRIPTION SOIC 150/208-MIL, PDIP 300-MIL AND WSON 6X5-MM ............................... 7
7. PIN CONFIGURATION SOIC 300-MIL ............................................................................................. 8
8. PIN DESCRIPTION SOIC 300-MIL .................................................................................................. 8
8.1 Package Types ..................................................................................................................... 9
8.2 Chip Select (/CS) .................................................................................................................. 9
8.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) ..................................... 9
8.4 Write Protect (/WP) .............................................................................................................. 9
8.5 HOLD (/HOLD) ..................................................................................................................... 9
8.6 Serial Clock (CLK) ................................................................................................................ 9
9. BLOCK DIAGRAM .......................................................................................................................... 10
10. FUNCTIONAL DESCRIPTION ....................................................................................................... 11
10.1 SPI OPERATIONS ............................................................................................................. 11
10.1.1 Standard SPI Instructions................................................................................................... 11
10.1.2 Dual SPI Instructions .......................................................................................................... 11
10.1.3 Quad SPI Instructions ........................................................................................................ 11
10.1.4 Hold Function ..................................................................................................................... 11
10.2 WRITE PROTECTION ....................................................................................................... 12
10.2.1 Write Protect Features ....................................................................................................... 12
11. CONTROL AND STATUS REGISTERS ......................................................................................... 13
11.1 STATUS REGISTER .......................................................................................................... 13
11.1.1 BUSY .................................................................................................................................. 13
11.1.2 Write Enable Latch (WEL) ................................................................................................. 13
11.1.3 Block Protect Bits (BP2, BP1, BP0) ................................................................................... 13
11.1.4 Top/Bottom Block Protect (TB) ........................................................................................... 13
11.1.5 Sector/Block Protect (SEC) ................................................................................................ 13
11.1.6 Status Register Protect (SRP1, SRP0) .............................................................................. 14
11.1.7 Erase Suspend Status (SUS) ............................................................................................. 14
11.1.8 Quad Enable (QE) .............................................................................................................. 14
11.1.9 Status Register Memory Protection .................................................................................... 16
11.2 INSTRUCTIONS ................................................................................................................. 17
11.2.1 Manufacturer and Device Identification .............................................................................. 17
W25Q16BV
Publication Release Date: July 08, 2010
- 3 - Revision F
11.2.2 Instruction Set Table 1 (Erase, Program Instructions) ....................................................... 18
11.2.3 Instruction Set Table 2 (Read Instructions) ........................................................................ 19
11.2.4 Instruction Set Table 3 (ID, Security Instructions) .............................................................. 20
11.2.5 Write Enable (06h) ............................................................................................................. 21
11.2.6 Write Disable (04h) ............................................................................................................ 21
11.2.7 Read Status Register-1 (05h) and Read Status Register-2 (35h) ...................................... 22
11.2.8 Write Status Register (01h) ................................................................................................ 23
11.2.9 Read Data (03h) ................................................................................................................. 24
11.2.10 Fast Read (0Bh) ............................................................................................................... 25
11.2.11 Fast Read Dual Output (3Bh) ........................................................................................... 26
11.2.12 Fast Read Quad Output (6Bh) ......................................................................................... 27
11.2.13 Fast Read Dual I/O (BBh) ................................................................................................ 28
11.2.14 Fast Read Quad I/O (EBh) ............................................................................................... 30
11.2.15 Word Read Quad I/O (E7h) .............................................................................................. 32
11.2.16 Octal Word Read Quad I/O (E3h) .................................................................................... 34
11.2.17 Page Program (02h) ......................................................................................................... 36
11.2.18 Quad Input Page Program (32h) ...................................................................................... 37
11.2.19 Sector Erase (20h) ........................................................................................................... 38
11.2.20 32KB Block Erase (52h) ................................................................................................... 39
11.2.21 64KB Block Erase (D8h) .................................................................................................. 40
11.2.22 Chip Erase (C7h / 60h) ..................................................................................................... 41
11.2.23 Erase Suspend (75h) ....................................................................................................... 42
11.2.24 Erase Resume (7Ah) ........................................................................................................ 43
11.2.25 Power-down (B9h) ............................................................................................................ 44
11.2.26 Release Power-down / Device ID (ABh) ........................................................................... 45
11.2.27 Read Manufacturer / Device ID (90h) ............................................................................... 47
11.2.28 Read Manufacturer / Device ID Dual I/O (92h) ................................................................. 48
11.2.29 Read Manufacturer / Device ID Quad I/O (94h) ............................................................... 49
11.2.30 Read Unique ID Number (4Bh) ........................................................................................ 50
11.2.31 Read JEDEC ID (9Fh) ...................................................................................................... 51
11.2.32 Continuous Read Mode Reset (FFh or FFFFh)................................................................ 52
12. ELECTRICAL CHARACTERISTICS ............................................................................................... 53
12.1 Absolute Maximum Ratings ................................................................................................ 53
12.2 Operating Ranges............................................................................................................... 53
12.3 Power-up Timing and Write Inhibit Threshold .................................................................... 54
12.4 DC Electrical Characteristics .............................................................................................. 55
12.5 AC Measurement Conditions .............................................................................................. 56
12.6 AC Electrical Characteristics .............................................................................................. 57
12.7 AC Electrical Characteristics (cont’d) ................................................................................. 58
12.8 Serial Output Timing ........................................................................................................... 59
W25Q16BV
- 4 -
12.9 Serial Input Timing .............................................................................................................. 59
12.10 Hold Timing ....................................................................................................................... 59
13. PACKAGE SPECIFICATION .......................................................................................................... 60
13.1 8-Pin SOIC 150-mil (Package Code SN) ............................................................................ 60
13.2 8-Pin SOIC 208-mil (Package Code SS) ............................................................................ 61
13.3 8-Pin PDIP 300-mil (Package Code DA) ............................................................................ 62
13.4 8-Contact 6x5mm WSON (Package Code ZP) .................................................................. 63
13.5 16-Pin SOIC 300-mil (Package Code SF) .......................................................................... 65
14. ORDERING INFORMATION .......................................................................................................... 66
14.1 Valid Part Numbers and Top Side Marking ........................................................................ 67
15. REVISION HISTORY ...................................................................................................................... 68
W25Q16BV
Publication Release Date: July 08, 2010
- 5 - Revision F
1. GENERAL DESCRIPTION
The W25Q16BV (16M-bit) Serial Flash memory provides a storage solution for systems with limited
space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current
consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving
packages.
The W25Q16BV array is organized into 8,192 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (sector erase), groups of 128 (32KB
block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q16BV has 512
erasable sectors and 32 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in
applications that require data and parameter storage. (See figure 2.)
The W25Q16BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz for Dual Output and 416MHz for Quad Output when using the Fast
Read Dual/Quad Output instructions. These transfer rates can outperform standard Asynchronous 8 and
16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as
few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place)
operation.
A Hold pin, Write Protect pin and programmable write protection, with top or bottom array control,
provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and
device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q16BV: 16M-bit / 2M-byte (2,097,152)
– 256-bytes per programmable page
Standard, Dual or Quad SPI
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– Up to 8X that of ordinary Serial Flash
– 104MHz clock operation
– 208MHz equivalent Dual SPI
– 416MHz equivalent Quad SPI
– 50MB/S continuous data transfer rate
Efficient “Continuous Read Mode”
– Low Instruction overhead
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down (typ.)
– -40°C to +85°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector Erase (4K-bytes)
– Block Erase (32K and 64K-bytes)
– Program one to 256 bytes
– More than 100,000 erase/write cycles
– More than 20-year data retention
Advanced Security Features
– Software and Hardware Write-Protect
– Top or Bottom, Sector or Block selection
– Lock-Down and OTP protection(1)
– 64-Bit Unique ID for each device
Space Efficient Packaging
– 8-pin SOIC 150(2)/208-mil
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil(2)
– 16-pin SOIC 300-mil(2)
– Contact Winbond for KGD and other options
Notes 1. Refer to Ordering Information.
2. These package types are Special Order Only, please contact Winbond for more information.
W25Q16BV
- 6 -
3. PIN CONFIGURATION SOIC 150 / 208-MIL
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
Figure 1a. W25Q16BV Pin Assignments, 8-pin SOIC 150 / 208-mil (Package Code SN & SS)
4. PAD CONFIGURATION WSON 6X5-MM
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
Figure 1b. W25Q16BV Pad Assignments, 8-pad WSON 6x5-mm(Package Code ZP)
W25Q16BV
Publication Release Date: July 08, 2010
- 7 - Revision F
5. PAD CONFIGURATION PDIP 300-MIL
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
CLK
DI (IO0)
Figure 1c. W25Q16BV Pin Assignments, 8-pin PDIP (Package Code DA)
6. PIN DESCRIPTION SOIC 150/208-MIL, PDIP 300-MIL AND WSON 6X5-MM
PIN NO.
PIN NAME
FUNCTION
1
/CS
Chip Select Input
2
DO (IO1)
Data Output (Data Input Output 1)*1
3
/WP (IO2)
Write Protect Input ( Data Input Output 2)*2
4
GND
Ground
5
DI (IO0)
Data Input (Data Input Output 0)*1
6
CLK
Serial Clock Input
7
/HOLD (IO3)
Hold Input (Data Input Output 3)*2
8
VCC
Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q16BV
- 8 -
7. PIN CONFIGURATION SOIC 300-MIL
1/HOLD (IO3)
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
N/C
N/C
N/C
N/C
/CS
DO (IO1)
CLK
DI (IO0)
N/C
N/C
N/C
N/C
GND
/WP (IO2)
1/HOLD (IO3)
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC
N/C
N/C
N/C
N/C
/CS
DO (IO1)
CLK
DI (IO0)
N/C
N/C
N/C
N/C
GND
/WP (IO2)
Figure 1d. W25Q16BV Pin Assignments, 16-pin SOIC 300-mil (Package Code SF)
8. PIN DESCRIPTION SOIC 300-MIL
PAD NO.
PAD NAME
I/O
FUNCTION
1
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
2
VCC
Power Supply
3
N/C
No Connect
4
N/C
No Connect
5
N/C
No Connect
6
N/C
No Connect
7
/CS
I
Chip Select Input
8
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
9
/WP (IO2)
I/O
Write Protect Input (Data Input Output 2)*2
10
GND
Ground
11
N/C
No Connect
12
N/C
No Connect
13
N/C
No Connect
14
N/C
No Connect
15
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
16
CLK
I
Serial Clock Input
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q16BV
Publication Release Date: July 08, 2010
- 9 - Revision F
8.1 Package Types
W25Q16BV is offered in an 8-pin plastic 150-mil or 208-mil width SOIC (package code SN & SS) and 6x5-
mm WSON (package code ZP) as shown in figure 1a, and 1b, respectively. The 300-mil 8-pin PDIP is
another option of package selections (Figure 1c). The W25Q16BV is also offered in a 16-pin plastic 300-
mil width SOIC (package code SF) as shown in figure 1d. Package diagrams and dimensions are
illustrated at the end of this datasheet.
8.2 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up (see “Write Protection” and figure 32). If needed a pull-
up resister on /CS can be used to accomplish this.
8.3 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q16BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge CLK.
Dual and Quad SPI instruction use the bidirectional IO pins to serially write instructions, addresses or data
to the device on the rising edge of CLK and read data or status from the device on the falling edge of CLK.
Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set. When
QE=1 the /WP pin becomes IO2 and /HOLD pin becomes IO3.
8.4 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected. The /WP pin
is active low. When the QE bit of Status Register-2 is set for Quad I/O, the /WP pin (Hardware Write
Protect) function is not available since this pin is used for IO2. See figure 1a, 1b, 1c, and 1d for the pin
configuration of Quad I/O operation.
8.5 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a-d for the pin configuration of Quad I/O operation.
8.6 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
W25Q16BV
- 10 -
9. BLOCK DIAGRAM
Figure 2. W25Q16BV Serial Flash Memory Block Diagram
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
10FF00h 10FFFFh
•Block 16 (64KB) •
100000h 1000FFh
•
•
•
1FFF00h 1FFFFFh
•Block 31 (64KB) •
1F0000h 1F00FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q16BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Write Protect Logic and Row Decode
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
10FF00h 10FFFFh
•Block 16 (64KB) •
100000h 1000FFh
•
•
•
1FFF00h 1FFFFFh
•Block 31 (64KB) •
1F0000h 1F00FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q16BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Write Protect Logic and Row Decode
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
W25Q16BV
Publication Release Date: July 08, 2010
- 11 - Revision F
10. FUNCTIONAL DESCRIPTION
10.1 SPI OPERATIONS
10.1.1 Standard SPI Instructions
The W25Q16BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock
(CLK), Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions
use the DI input pin to serially write instructions, addresses or data to the device on the rising edge of
CLK. The DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Modes 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0 the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3 the CLK signal is normally high on the falling and rising edges of /CS.
10.1.2 Dual SPI Instructions
The W25Q16BV supports Dual SPI operation when using the “Fast Read Dual Output and Dual I/O” (3B
and BB hex) instructions. These instructions allow data to be transferred to or from the device at two to
three times the rate of ordinary Serial Flash devices. The Dual Read instructions are ideal for quickly
downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical code
directly from the SPI bus (XIP). When using Dual SPI instructions the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
10.1.3 Quad SPI Instructions
The W25Q16BV supports Quad SPI operation when using the “Fast Read Quad Output”, “Fast Read
Quad I/O”, “Word Read Quad I/O” and “Octal Word Quad I/O” (6B, EB, E7 and E3 hex respectively).
These instructions allow data to be transferred to or from the device four to six times the rate of ordinary
Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random
access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP
and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set.
10.1.4 Hold Function
The /HOLD signal allows the W25Q16BV operation to be paused while it is actively selected (when /CS is
low). The /HOLD function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, consider if the page buffer was only partially written when a priority interrupt
requires use of the SPI bus. In this case the /HOLD function can save the state of the instruction and the
data in the buffer so programming can resume where it left off once the bus is available again. The /HOLD
function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate on
the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active (low) for the full duration of the /HOLD operation to avoid
resetting the internal logic state of the device.
W25Q16BV
- 12 -
10.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern the W25Q16BV
provides several means to protect data from inadvertent writes.
10.2.1 Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after program and erase
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up(1)
One Time Program (OTP) write protection(1)
Note 1: These features are available upon special order. Please refer to Ordering Information.
Upon power-up or at power-down, the W25Q16BV will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 32). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a program, erase
or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the
Status Register Protect (SRP0, SRP1) and Block Protect (SEC,TB, BP2, BP1 and BP0) bits. These
settings allow a portion or all of the memory to be configured as read only. Used in conjunction with the
Write Protect (/WP) pin, changes to the Status Register can be enabled or disabled under hardware
control. See Status Register for further information. Additionally, the Power-down instruction offers an
extra level of write protection as all instructions are ignored except for the Release Power-down
instruction.
W25Q16BV
Publication Release Date: July 08, 2010
- 13 - Revision F
11. CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, the Quad SPI setting and Erase Suspend status. The Write Status Register instruction can be
used to configure the devices write protection features and Quad SPI setting. Write access to the Status
Register is controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write
Enable instruction, and in some cases the /WP pin.
11.1 STATUS REGISTER
11.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this
time the device will ignore further instructions except for the Read Status Register and Erase Suspend
instruction (see tW, tPP, tSE, tBE, and tCE in AC Characteristics). When the program, erase or write status
register instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready
for further instructions.
11.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
11.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
11.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
11.1.5 Sector/Block Protect (SEC)
The non-volatile Sector protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB
Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown
in the Status Register Memory Protection table. The default setting is SEC=0.
W25Q16BV
- 14 -
11.1.6 Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register
(S8 and S7). The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable (OTP) protection.
SRP1
SRP0
/WP
Status
Register
Description
0
0
X
Software
Protection
/WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0
1
0
Hardware
Protected
When /WP pin is low the Status Register locked and can not
be written to.
0
1
1
Hardware
Unprotected
When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
1
0
X
Power Supply
Lock-Down(1)
Status Register is protected and can not be written to again
until the next power-down, power-up cycle.(2)
1
1
X
One Time
Program(1)
Status Register is permanently protected and can not be
written to.
Note:
1. These features are available upon special order. Please refer to Ordering Information.
2. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state.
11.1.7 Erase Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing an
Erase Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase Resume (7Ah) instruction as
well as a power-down, power-up cycle.
11.1.8 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are enabled. When
the QE bit is set to a 1, the Quad IO2 and IO3 pins are enabled, and /WP and /HOLD functions are
disabled.
WARNING: If the /WP or /HOLD pins are tied directly to the power supply or ground during
standard SPI or Dual SPI operation, the QE bit should never be set to a 1.
W25Q16BV
Publication Release Date: July 08, 2010
- 15 - Revision F
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REGISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REGISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
Figure 3a. Status Register-1
S15 S14 S13 S12 S11 S10 S9 S8
SUS (R) (R) (R) (R) (R) QE SRP1
SUSPEND STATUS
RESERVED
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)
S15 S14 S13 S12 S11 S10 S9 S8
SUS (R) (R) (R) (R) (R) QE SRP1
SUSPEND STATUS
RESERVED
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)
Figure 3b. Status Register-2
W25Q16BV
- 16 -
11.1.9 Status Register Memory Protection
STATUS REGISTER(1)
W25Q16BV (16M-BIT) MEMORY PROTECTION
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
31
1F0000h – 1FFFFFh
64KB
Upper 1/32
0
0
0
1
0
30 and 31
1E0000h – 1FFFFFh
128KB
Upper 1/16
0
0
0
1
1
28 thru 31
1C0000h – 1FFFFFh
256KB
Upper 1/8
0
0
1
0
0
24 thru 31
180000h – 1FFFFFh
512KB
Upper 1/4
0
0
1
0
1
16 thru 31
100000h – 1FFFFFh
1MB
Upper 1/2
0
1
0
0
1
0
000000h – 00FFFFh
64KB
Lower 1/32
0
1
0
1
0
0 and 1
000000h – 01FFFFh
128KB
Lower 1/16
0
1
0
1
1
0 thru 3
000000h – 03FFFFh
256KB
Lower 1/8
0
1
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/4
0
1
1
0
1
0 thru 15
000000h – 0FFFFFh
1MB
Lower 1/2
X
X
1
1
X
0 thru 31
000000h – 1FFFFFh
2MB
ALL
1
0
0
0
1
31
1FF000h – 1FFFFFh
4KB
Top Block
1
0
0
1
0
31
1FE000h – 1FFFFFh
8KB
Top Block
1
0
0
1
1
31
1FC000h – 1FFFFFh
16KB
Top Block
1
0
1
0
X
31
1F8000h – 1FFFFFh
32KB
Top Block
1
1
0
0
1
0
000000h – 000FFFh
4KB
Bottom Block
1
1
0
1
0
0
000000h – 001FFFh
8KB
Bottom Block
1
1
0
1
1
0
000000h – 003FFFh
16KB
Bottom Block
1
1
1
0
X
0
000000h – 007FFFh
32KB
Bottom Block
Note:
1. x = don’t care
W25Q16BV
Publication Release Date: July 08, 2010
- 17 - Revision F
11.2 INSTRUCTIONS
The instruction set of the W25Q16BV consists of thirty basic instructions that are fully controlled through
the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip Select
(/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI input is
sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 32. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be terminated. This feature further protects the device from
inadvertent writes. Additionally, while the memory is being programmed or erased, or when the Status
Register is being written, all instructions except for Read Status Register will be ignored until the program
or erase cycle has completed.
11.2.1 Manufacturer and Device Identification
MANUFACTURER ID
(M7-M0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h
9Fh
W25Q16BV
14h
4015h
W25Q16BV
- 18 -
11.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1)
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Write Enable
06h
Write Disable
04h
Read Status Register-1
05h
(S7–S0) (2)
Read Status Register-2
35h
(S15-S8) (2)
Write Status Register
01h
(S7–S0)
(S15-S8)
Page Program
02h
A23–A16
A15–A8
A7–A0
(D7–D0)
Quad Page Program
32h
A23–A16
A15–A8
A7–A0
(D7–D0, …)(3)
Sector Erase (4KB)
20h
A23–A16
A15–A8
A7–A0
Block Erase (32KB)
52h
A23–A16
A15–A8
A7–A0
Block Erase (64KB)
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
C7h/60h
Erase Suspend
75h
Erase Resume
7Ah
Power-down
B9h
Continuous Read Mode
Reset (4)
FFh
FFh
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. Quad Page Program Input Data:
IO0 = (D4, D0, ……)
IO1 = (D5, D1, ……)
IO2 = (D6, D2, ……)
IO3 = (D7, D3, ……)
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
11.2.32 for more information.
W25Q16BV
Publication Release Date: July 08, 2010
- 19 - Revision F
11.2.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Fast Read Dual Output
3Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)(1)
Fast Read Dual I/O
BBh
A23-A8(2)
A7-A0, M7-M0(2)
(D7-D0, …)(1)
Fast Read Quad Output
6Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)(3)
Fast Read Quad I/O
EBh
A23-A0, M7-M0(4)
(x,x,x,x, D7-D0, …)(5)
(D7-D0, …)(3)
Word Read Quad I/O(7)
E7h
A23-A0, M7-M0(4)
(x,x, D7-D0, …)(6)
(D7-D0, …)(3)
Octal Word Read
Quad I/O(8)
E3h
A23-A0, M7-M0(4)
(D7-D0, …)(3)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..)
IO1 = (x, x, D5, D1, …..)
IO2 = (x, x, D6, D2, …..)
IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
W25Q16BV
- 20 -
11.2.4 Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Release Power down /
Device ID
ABh
dummy
dummy
dummy
(ID7-ID0)(1)
Manufacturer/
Device ID(2)
90h
dummy
dummy
00h
(MF7-MF0)
(ID7-ID0)
Manufacturer/Device ID
by Dual I/O
92h
A23-A8
A7-A0, M[7:0]
(MF[7:0], ID[7:0])
Manufacture/Device ID
by Quad I/O
94h
A23-A0, M[7:0]
xxxx, (MF[7:0], ID[7:0])
(MF[7:0], ID[7:0], …)
JEDEC ID
9Fh
(MF7-MF0)
Manufacturer
(ID15-ID8)
Memory Type
(ID7-ID0)
Capacity
Read Unique ID
4Bh
dummy
dummy
dummy
dummy
(ID63-ID0)
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction.
2. See Manufacturer and Device Identification table for Device ID information.
W25Q16BV
Publication Release Date: July 08, 2010
- 21 - Revision F
11.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a
1. The WEL bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase and
Write Status Register instruction. The Write Enable instruction is entered by driving /CS low, shifting the
instruction code “06h” into the Data Input (DI) pin on the rising edge of CLK, and then driving /CS high.
Figure 4. Write Enable Instruction Sequence Diagram
11.2.6 Write Disable (04h)
The Write Disable instruction (Figure 5) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Page Program, Sector Erase, Block Erase and Chip Erase
instructions.
Figure 5. Write Disable Instruction Sequence Diagram
W25Q16BV
- 22 -
11.2.7 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 and “35h” for
Status Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 6. The Status
Register bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0,
SRP1, QE and SUS bits (see description of the Status Register earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 6. The instruction is completed by driving /CS high.
Figure 6. Read Status Register Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 23 - Revision F
11.2.8 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. A Write Enable instruction
must previously have been executed for the device to accept the Write Status Register Instruction (Status
Register bit WEL must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending
the instruction code “01h”, and then writing the status register data byte as illustrated in figure 7. The
Status Register bits are shown in figure 3 and described earlier in this datasheet.
Only non-volatile Status Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7, 5, 4, 3, 2 of Status Register-
1) and QE, SRP1(bits 9 and 8 of Status Register-2) can be written to. All other Status Register bit
locations are read-only and will not be affected by the Write Status Register instruction.
The /CS pin must be driven high after the eighth or sixteenth bit of data that is clocked in. If this is not
done the Write Status Register instruction will not be executed. If /CS is driven high after the eighth clock
(compatible with the 25X series) the QE and SRP1 bits will be cleared to 0. After /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Register
cycle has finished the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
The Write Status Register instruction allows the Block Protect bits (SEC, TB, BP2, BP1 and BP0) to be set
for protecting all, a portion, or none of the memory from erase and program instructions. Protected areas
become read-only (see Status Register Memory Protection table and description). The Write Status
Register instruction also allows the Status Register Protect bits (SRP0, SRP1) to be set. Those bits are
used in conjunction with the Write Protect (/WP) pin, Lock out or OTP features to disable writes to the
status register. Please refer to 11.1.6 for detailed descriptions regarding Status Register protection
methods. Factory default for all status Register bits are 0.
Figure 7. Write Status Register Instruction Sequence Diagram
W25Q16BV
- 24 -
11.2.9 Read Data (03h)
The Read Data instruction allows one more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a
24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 8. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
Figure 8. Read Data Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 25 - Revision F
11.2.10 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 9. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
Figure 9. Fast Read Instruction Sequence Diagram
W25Q16BV
- 26 -
11.2.11 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q16BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
Figure 10. Fast Read Dual Output Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 27 - Revision F
11.2.12 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q16BV
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in figure 11. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be
high-impedance prior to the falling edge of the first data out clock.
Figure 11. Fast Read Quad Output Instruction Sequence Diagram
W25Q16BV
- 28 -
11.2.13 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input
the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 12a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Fast Read Dual I/O instruction
(after /CS is raised and then lowered) does not require the BBh instruction code, as shown in figure 12b.
This reduces the instruction sequence by eight clocks and allows the Read address to be immediately
entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax”
hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0)
before issuing normal instructions (See 11.2.32 for detailed descriptions).
Figure 12a. Fast Read Dual I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
W25Q16BV
Publication Release Date: July 08, 2010
- 29 - Revision F
Figure 12b. Fast Read Dual I/O Instruction Sequence Diagram (M7-0 = Axh)
W25Q16BV
- 30 -
11.2.14 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy
clocks are required prior to the data output. The Quad I/O dramatically reduces instruction overhead
allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit
(QE) of Status Register-2 must be set to enable the Fast read Quad I/O Instruction.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Fast Read Quad I/O instruction
(after /CS is raised and then lowered) does not require the EBh instruction code, as shown in figure 13b.
This reduces the instruction sequence by eight clocks and allows the Read address to be immediately
entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax”
hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0)
before issuing normal instructions (See 11.2.32 for detailed descriptions).
Figure 13a. Fast Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
Byte 1 Byte 2Byte 1 Byte 2
W25Q16BV
Publication Release Date: July 08, 2010
- 31 - Revision F
Figure 13b. Fast Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
W25Q16BV
- 32 -
11.2.15 Word Read Quad I/O (E7h)
The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except
that the lowest Address bit (A0) must equal 0 and only two Dummy clocks are required prior to the data
output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code
execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to
enable the Word Read Quad I/O Instruction.
Word Read Quad I/O with “Continuous Read Mode”
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 14a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Word Read Quad I/O instruction
(after /CS is raised and then lowered) does not require the E7h instruction code, as shown in figure 14b.
This reduces the instruction sequence by eight clocks and allows the Read address to be immediately
entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value other than “Ax”
hex, the next instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus
returning to normal operation. A “Continuous Read Mode” Reset instruction can be used to reset (M7-0)
before issuing normal instructions (See 11.2.32 for detailed descriptions).
Figure 14a. Word Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
Instruction (E7h)
Byte 1 Byte 2 Byte 3
4 0 4 0 4 0
5 1 5 1 5 1
6 2 6 2 6 2
7 3 7 3 7 3
Instruction (E7h)
Byte 1 Byte 2 Byte 3
4 04 0 4 04 0 4 04 0
5 15 1 5 15 1 5 15 1
6 26 2 6 26 2 6 26 2
7 37 3 7 37 3 7 37 3
W25Q16BV
Publication Release Date: July 08, 2010
- 33 - Revision F
Figure 14b. Word Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
Byte 1 Byte 2 Byte 3
404040
515151
626262
737373
Byte 1 Byte 2 Byte 3
40
4040
4040
40
51
5151
5151
51
62
6262
6262
62
73
7373
7373
73
W25Q16BV
- 34 -
11.2.16 Octal Word Read Quad I/O (E3h)
The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction
except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the four dummy clocks
are not required, which further reduces the instruction overhead allowing even faster random access for
code execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal
Word Read Quad I/O Instruction.
Octal Word Read Quad I/O with “Continuous Read Mode”
The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 15a. The
upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through
the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock.
If the “Continuous Read Mode” bits (M7-0) equals “Ax” hex, then the next Octal Word Read Quad I/O
instruction (after /CS is raised and then lowered) does not require the E3h instruction code, as shown in
figure 15b. This reduces the instruction sequence by eight clocks and allows the Read address to be
immediately entered after /CS is asserted low. If the “Continuous Read Mode” bits (M7-0) are any value
other than “Ax” hex, the next instruction (after /CS is raised and then lowered) requires the first byte
instruction code, thus returning to normal operation. A “Continuous Read Mode” Reset instruction can be
used to reset (M7-0) before issuing normal instructions (See 11.2.32 for detailed descriptions).
Figure 15a. Octal Word Read Quad I/O Instruction Sequence Diagram (M7-0 = 0xh or NOT Axh)
Instruction (E3h)
Byte 1 Byte 2 Byte 3
4 0 4 0 4 0
5 1 5 1 5 1
6 2 6 2 6 2
7 3 7 3 7 3
4 0
5 1
6 2
7 3
Byte 4
Instruction (E3h)
Byte 1 Byte 2 Byte 3
4 04 0 4 04 0 4 04 0
5 15 1 5 15 1 5 15 1
6 26 2 6 26 2 6 26 2
7 37 3 7 37 3 7 37 3
4 04 0
5 15 1
6 26 2
7 37 3
Byte 4
W25Q16BV
Publication Release Date: July 08, 2010
- 35 - Revision F
Figure 15b. Octal Word Read Quad I/O Instruction Sequence Diagram (M7-0 = Axh)
Byte 2 Byte 3 Byte 4
404040
515151
626262
737373
Byte 1
40
51
62
73
Byte 2 Byte 3 Byte 4
40
4040
4040
40
51
5151
5151
51
62
6262
6262
62
73
7373
7373
73
Byte 1
40
40
51
51
62
62
73
73
W25Q16BV
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11.2.17 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device
will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by
driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and
at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the instruction
while data is being sent to the device. The Page Program instruction sequence is shown in figure 16.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte
has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven
high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (BP2, BP1, and BP0) bits.
Figure 16. Page Program Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 37 - Revision F
11.2.18 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction since
the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction code
“32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin must
be held low for the entire length of the instruction while data is being sent to the device. All other functions
of Quad Page Program are identical to standard Page Program. The Quad Page Program instruction
sequence is shown in figure 17.
Figure 17. Quad Input Page Program Instruction Sequence Diagram
W25Q16BV
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11.2.19 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 18.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2,
BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 18. Sector Erase Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 39 - Revision F
11.2.20 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 19.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0) bits (see
Status Register Memory Protection table).
Figure 19. 32KB Block Erase Instruction Sequence Diagram
W25Q16BV
- 40 -
11.2.21 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 20.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (SEC, TB, BP2, BP1, and BP0) bits (see
Status Register Memory Protection table).
Figure 20. 64KB Block Erase Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 41 - Revision F
11.2.22 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 21.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any section of the array
is protected by the Block Protect (BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 21. Chip Erase Instruction Sequence Diagram
W25Q16BV
- 42 -
11.2.23 Erase Suspend (75h)
The Erase Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase operation and
then read from or program data to, any other sectors or blocks. The Erase Suspend instruction sequence
is shown in figure 22.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase or Program operation, the Erase Suspend instruction is ignored.
The Erase Suspend instruction “75h” will be accepted by the device only if the SUS bit in the Status
Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase is on-going. If the SUS bit
equals to 1 or the BUSY bit equals to 0, the Suspend instruction will be ignored by the device. A maximum
of time of “tSUS” (See AC Characteristics) is required to suspend the erase operation. The BUSY bit in the
Status Register will be cleared from 1 to 0 within “tSUS” and the SUS bit in the Status Register will be set
from 0 to 1 immediately after Erase Suspend. For a previously resumed Erase operation, it is also
required that the Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following
the preceding Resume instruction “7Ah”.
Unexpected power off during the Erase suspend state will reset the device and release the suspend state.
SUS bit in the Status Register will also reset to 0. The data within the sector or block that was being
suspended may become corrupted. It is recommended for the user to implement system design
techniques against the accidental power interruption and preserve data integrity during erase suspend
state.
Figure 22. Erase Suspend Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 43 - Revision F
11.2.24 Erase Resume (7Ah)
The Erase Resume instruction “7Ah” must be written to resume the Sector or Block Erase operation after
an Erase Suspend. The Resume instruction “7Ah” will be accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After issued the SUS bit will be cleared from 1
to 0 immediately, the BUSY bit will be set from 0 to 1 within 200ns and the Sector or Block will complete
the erase operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase Resume instruction sequence is shown in figure 23.
Resume instruction is ignored if the previous Erase Suspend operation was interrupted by unexpected
power off. It is also required that a subsequent Erase Suspend instruction not to be issued within a
minimum of time of “tSUS” following a previous Resume instruction.
Figure 23. Erase Resume Instruction Sequence Diagram
W25Q16BV
- 44 -
11.2.25 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
Figure 24. Deep Power-down Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 45 - Revision F
11.2.26 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 25a. Release from power-down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
25b. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 25b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
Figure 25a. Release Power-down Instruction Sequence Diagram
W25Q16BV
- 46 -
Figure 25b. Release Power-down / Device ID Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 47 - Revision F
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46
11.2.27 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in figure 26. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
Figure 26. Read Manufacturer / Device ID Instruction Sequence Diagram
W25Q16BV
- 48 -
11.2.28 Read Manufacturer / Device ID Dual I/O (92h)
The Read Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 2x speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits, with the capability to input the
Address bits two bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are
shifted out 2 bits per clock on the falling edge of CLK with most significant bits (MSB) first as shown in
figure 27. The Device ID values for the W25Q16BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
Figure 27. Read Manufacturer / Device ID Dual I/O Instruction Sequence Diagram
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
W25Q16BV
Publication Release Date: July 08, 2010
- 49 - Revision F
11.2.29 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits and then four clock dummy cycles,
with the capability to input the Address bits four bits per clock. After which, the Manufacturer ID for
Winbond (EFh) and the Device ID are shifted out four bits per clock on the falling edge of CLK with most
significant bit (MSB) first as shown in figure 28. The Device ID values for the W25Q16BV is listed in
Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID
will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving /CS high.
Figure 28. Read Manufacturer / Device ID Quad I/O Instruction Sequence Diagram
Note:
The “Continuous Read Mode” bits M(7-0) must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
W25Q16BV
- 50 -
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103
DO 63 62 61 60 59 2 1 0
*
*=MSB
DO
24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103
DO 63 62 61 60 59 2 1 0
*
*=MSB
DO
11.2.30 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q16BV device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-
bit ID is shifted out on the falling edge of CLK as shown in figure 29.
Figure 29. Read Unique ID Number Instruction Sequence Diagram
W25Q16BV
Publication Release Date: July 08, 2010
- 51 - Revision F
11.2.31 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q16BV provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low
and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and
two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling
edge of CLK with most significant bit (MSB) first as shown in figure 30. For memory type and capacity
values refer to Manufacturer and Device Identification table.
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3115 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31
Figure 30. Read JEDEC ID Instruction Sequence Diagram
W25Q16BV
- 52 -
11.2.32 Continuous Read Mode Reset (FFh or FFFFh)
For Fast Read Dual/Quad I/O operations, “Continuous Read Mode” Bits (M7-0) are implemented to further
reduce instruction overhead. By setting the (M7-0) to “Ax” hex, the next Fast Read Dual/Quad I/O
operation does not require the BBh/EBh/E7h/E3h instruction code (See 11.2.13 - 11.2.16 for detail
descriptions).
If the system controller is Reset during operation it will likely send a standard SPI instruction, such
as Read ID (9Fh) or Fast Read (0Bh), to the W25Q16BV. However, as with most SPI Serial Flash
memories, the W25Q16BV does not have a hardware Reset pin, so if Continuous Read Mode bits are set
to “Ax” hex, the W25Q16BV will not recognize any standard SPI instructions. To address this possibility, it
is recommended to issue a Continuous Read Mode Reset instruction as the first instruction after a system
Reset. Doing so will release the Continuous Read Mode from the “Ax” hex state and allow Standard SPI
instructions to be recognized. The Continuous Read Mode Reset instruction is shown in figure 31.
/CS
Mode Bit Reset
for Dual I/O
Mode 3
Mode 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode 3
Mode 0
Mode Bit Reset
for Quad I/O
FFh FFh
Don’t Care
Don’t Care
Don’t Care
CLK
IO0
IO1
IO2
IO3
/CS
Mode Bit Reset
for Dual I/O
Mode 3
Mode 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Mode 3
Mode 0
Mode Bit Reset
for Quad I/O
FFh FFh
Don’t Care
Don’t Care
Don’t Care
CLK
IO0
IO1
IO2
IO3
Figure 31. Continuous Read Mode Reset for Fast Read Dual/Quad I/O
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The
instruction is “FFh”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are
needed to shift in instruction “FFFFh”.
W25Q16BV
Publication Release Date: July 08, 2010
- 53 - Revision F
12. ELECTRICAL CHARACTERISTICS
12.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to +4.0
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
12.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage(1)
VCC
FR = 80MHz, fR = 50MHz
FR = 104MHz, fR = 50MHz
FR = 50MHz (for E3h command)
2.7
3.0
3.0
3.6
3.6
3.6
V
Ambient Temperature,
Operating
TA
Commercial
Industrial
0
–40
+70
+85
°C
Note:
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10% of
the programming (erase/write) voltage.
W25Q16BV
- 54 -
12.3 Power-up Timing and Write Inhibit Threshold
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
VCC (min) to /CS Low
tVSL(1)
10
µs
Time Delay Before Write Instruction
tPUW(1)
1
10
ms
Write Inhibit Threshold Voltage
VWI(1)
1
2
V
Note:
1. These parameters are characterized only.
Figure 32. Power-up Timing and Voltage Levels
W25Q16BV
Publication Release Date: July 08, 2010
- 55 - Revision F
12.4 DC Electrical Characteristics
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
TYP
MAX
Input Capacitance
CIN(1)
VIN = 0V(1)
6
pF
Output Capacitance
Cout(1)
VOUT = 0V(1)
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
µA
Current Read Data /
Dual /Quad 1MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/8.5/10
mA
Current Read Data /
Dual /Quad 33MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
9/10.5/12
mA
Current Read Data /
Dual /Quad 50MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9
10/12/13.5
mA
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12
15/16.5/18
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program
ICC5
/CS = VCC
20
25
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
V
Output Low Voltage
VOL
IOL = 1.6 mA
0.4
V
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA=25° C, VCC 3V.
2. Checker Board Pattern.
W25Q16BV
- 56 -
12.5 AC Measurement Conditions
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
Load Capacitance
CL
30
pF
Input Rise and Fall Times
TR, TF
5
ns
Input Pulse Voltages
VIN
0.2 VCC to 0.8 VCC
V
Input Timing Reference Voltages
IN
0.3 VCC to 0.7 VCC
V
Output Timing Reference Voltages
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 33. AC Measurement I/O Waveform
W25Q16BV
Publication Release Date: July 08, 2010
- 57 - Revision F
12.6 AC Electrical Characteristics
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Clock frequency for all instructions,
except Read Data (03h) & Octal Word Read (E3h)
2.7V-3.6V VCC & Industrial Temperature
FR
fC
D.C.
80
MHz
Clock frequency for all instructions,
except Read Data (03h) & Octal Word Read (E3h)
3.0V-3.6V VCC & Commercial Temperature
FR
fC
D.C.
104
MHz
Clock frequency for Octal Word Read (E3h)
3.0V-3.6V VCC & Industrial Temperature
FR
fC
D.C.
50
MHz
Clock freq. Read Data instruction (03h)
fR
D.C.
50
MHz
Clock High, Low Time except Read Data (03h)
tCLH,
tCLL(1)
4.5
ns
Clock High, Low Time for Read Data (03h)
instruction
tCRLH,
tCRLL(1)
6
ns
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
/CS Active Setup Time relative to CLK
tSLCH
tCSS
5
ns
/CS Not Active Hold Time relative to CLK
tCHSL
5
ns
Data In Setup Time
tDVCH
tDSU
1.5
ns
Data In Hold Time
tCHDX
tDH
4
ns
/CS Active Hold Time relative to CLK
tCHSH
5
ns
/CS Not Active Setup Time relative to CLK
tSHCH
5
ns
/CS Deselect Time (for Array Read Array Read /
Erase or Program Read Status Registers)
tSHSL
tCSH
7/40
ns
Output Disable Time
tSHQZ(2)
tDIS
7
ns
Clock Low to Output Valid
2.7V-3.6V / 3.0V-3.6V
tCLQV1
tV1
6 / 5
ns
Clock Low to Output Valid (for Read ID instructions)
2.7V-3.6V / 3.0V-3.6V
tCLQV2
tV2
8.5 / 7.5
ns
Output Hold Time
tCLQX
tHO
0
ns
Continued – next page
W25Q16BV
- 58 -
12.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
7
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (4)
tBP1
20
50
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
12
µs
Page Program Time
tPP
0.7
3
ms
Sector Erase Time (4KB)
tSE
30
200/400(5)
ms
Block Erase Time (32KB)
tBE1
120
800
ms
Block Erase Time (64KB)
tBE2
150
1000
ms
Chip Erase Time
tCE
3
10
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP0 is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5. Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
W25Q16BV
Publication Release Date: July 08, 2010
- 59 - Revision F
12.8 Serial Output Timing
12.9 Serial Input Timing
12.10 Hold Timing
W25Q16BV
- 60 -
13. PACKAGE SPECIFICATION
13.1 8-Pin SOIC 150-mil (Package Code SN)
L
θ
c
D
A1
A
e
b
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
4
1
58
L
θ
c
D
A1
A
e
bbb
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
EHE
4
1
58
SYMBOL
MILLIMETERS
INCHES
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
c
0.19
0.25
0.008
0.010
E(3)
3.80
4.00
0.150
0.157
D(3)
4.80
5.00
0.188
0.196
e(2)
1.27 BSC
0.050 BSC
HE
5.80
6.20
0.228
0.244
Y(4)
---
0.10
---
0.004
L
0.40
1.27
0.016
0.050
θ
0°
10°
0°
10°
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
W25Q16BV
Publication Release Date: July 08, 2010
- 61 - Revision F
13.2 8-Pin SOIC 208-mil (Package Code SS)
θ
GAUGE PLANE
θ
GAUGE PLANE
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
1.75
1.95
2.16
0.069
0.077
0.085
A1
0.05
0.15
0.25
0.002
0.006
0.010
A2
1.70
1.80
1.91
0.067
0.071
0.075
b
0.35
0.42
0.48
0.014
0.017
0.019
C
0.19
0.20
0.25
0.007
0.008
0.010
D
5.18
5.28
5.38
0.204
0.208
0.212
D1
5.13
5.23
5.33
0.202
0.206
0.210
E
5.18
5.28
5.38
0.204
0.208
0.212
E1
5.13
5.23
5.33
0.202
0.206
0.210
e(2)
1.27 BSC.
0.050 BSC.
H
7.70
7.90
8.10
0.303
0.311
0.319
L
0.50
0.65
0.80
0.020
0.026
0.031
y
---
---
0.10
---
---
0.004
θ
0°
---
8°
0°
---
8°
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
W25Q16BV
- 62 -
13.3 8-Pin PDIP 300-mil (Package Code DA)
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
---
---
5.33
---
---
0.210
A1
0.38
---
---
0.015
---
---
A2
3.18
3.30
3.43
0.125
0.130
0.135
D
9.02
9.27
10.16
0.355
0.365
0.400
E
7.62 BSC.
0.300 BSC.
E1
6.22
6.35
6.48
0.245
0.250
0.255
L
2.92
3.30
3.81
0.115
0.130
0.150
eB
8.51
9.02
9.53
0.335
0.355
0.375
θ°
0°
7°
15°
0°
7°
15°
W25Q16BV
Publication Release Date: July 08, 2010
- 63 - Revision F
13.4 8-Contact 6x5mm WSON (Package Code ZP)
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.35
0.40
0.48
0.014
0.016
0.019
C
---
0.20 REF.
---
---
0.008 REF.
---
D
5.90
6.00
6.10
0.232
0.236
0.240
D2
3.35
3.40
3.45
0.132
0.134
0.136
E
4.90
5.00
5.10
0.193
0.197
0.201
E2
4.25
4.30
4.35
0.167
0.169
0.171
e(2)
1.27 BSC.
0.050 BSC.
L
0.55
0.60
0.65
0.022
0.024
0.026
y
0.00
---
0.075
0.000
---
0.003
W25Q16BV
- 64 -
8-Contact 6x5mm WSON Cont’d.
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
SOLDER PATTERN
M
3.40
0.134
N
4.30
0.169
P
6.00
0.236
Q
0.50
0.020
R
0.75
0.026
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid placement of
exposed PCB vias under the pad.
W25Q16BV
Publication Release Date: July 08, 2010
- 65 - Revision F
13.5 16-Pin SOIC 300-mil (Package Code SF)
GAUGE PLANE
DETAIL A
GAUGE PLANE
DETAIL A
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
2.36
2.49
2.64
0.093
0.098
0.104
A1
0.10
---
0.30
0.004
---
0.012
A2
---
2.31
---
---
0.091
---
b
0.33
0.41
0.51
0.013
0.016
0.020
C
0.18
0.23
0.28
0.007
0.009
0.011
D
10.08
10.31
10.49
0.397
0.406
0.413
E
10.01
10.31
10.64
0.394
0.406
0.419
E1
7.39
7.49
7.59
0.291
0.295
0.299
e(2)
1.27 BSC.
0.050 BSC.
L
0.38
0.81
1.27
0.015
0.032
0.050
y
---
---
0.076
---
---
0.003
θ
0°
---
8°
0°
---
8°
Notes:
1. Controlling dimensions: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
W25Q16BV
- 66 -
14. ORDERING INFORMATION (1)
Notes:
1a. Only the 2nd letter is used for the part marking; WSON package type ZP is not used for the part marking.
1b. The “W” prefix is not included on the part marking.
2a. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and Reel (shape
T) or Tray (shape S), when placing orders.
2b. For shipments with OTP feature enabled, please specify when placing orders.
W 25Q 16B V xx(1)
W = Winbond
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
16B = 16M-bit
V = 2.7V to 3.6V
SN = 8-pin SOIC 150-mil ZP = 8-pad WSON 6x5mm SF = 16-pin SOIC 300-mil
SS = 8-pin SOIC 208-mil DA = 8-pin PDIP 300-mil
I = Industrial (-40°C to +85°C)
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
P = Green Package with Status Register Power Lock-Down & OTP enabled
(2)
W25Q16BV
Publication Release Date: July 08, 2010
- 67 - Revision F
14.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q16BV SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 12-digit
Product Number for ordering. However, due to limited space, the Top Side Marking on all packages use
an abbreviated 10-digit number.
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN(2)
SOIC-8 150mil
16M-bit
W25Q16BVSNIG
W25Q16BVSNIP
25Q16BVNIG
25Q16BVNIP
SS
SOIC-8 208mil
16M-bit
W25Q16BVSSIG
W25Q16BVSSIP
25Q16BVSIG
25Q16BVSIP
SF(2)
SOIC-16 300mil
16M-bit
W25Q16BVSFIG
W25Q16BVSFIP
25Q16BVFIG
25Q16BVFIP
ZP(1)
WSON-8 6x5mm
16M-bit
W25Q16BVZPIG
W25Q16BVZPIP
25Q16BVIG
25Q16BVIP
DA(2)
PDIP-8 300mil
16M-bit
W25Q16BVDAIG
W25Q16BVDAIP
25Q16BVAIG
25Q16BVAIP
Note:
1. WSON package type ZP is not used in the top side marking.
2. These Package types are Special Order Only, please contact Winbond for more information.
W25Q16BV
- 68 -
15. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A
08/24/08
New Create Preliminary
B
02/12/09
03/09/09
03/11/09
03/13/09
13, 14, 17, 51,
55, 63 & 64
63
5
13
Added Erase Suspend Status Bit
Removed HPM instruction
Updated max. read frequency
Updated Ordering Information
Added note 2b.
Change Active Current to 4mA
Change QE pin to QE Bit
C
04/23/09
04/30/09
04/30/09
5,7,9,61,65,66
54
54
Added PDIP Package.
Dual Data Read Icc3 1MHz Max = 8.5ma
Quad Data Read Icc3 1MHz Max = 10ma
D
08/20/09
5, 67
60-65
42, 43
50
Special Order Notes
Updated package diagram
Updated Erase Suspend/Resume descriptions
UID Waveform Corrected
E
11/04/09
68
4
47
51
Removed Preliminiary designator
Corrected PDF TOC error
Update 90h Waveform Diagram
Update 9Fh Waveform Diagram
F
07/08/10
60-65
55, 58
Updated Package Diagrams
Updated parameter VIL/VIH, tSE
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Further more, Winbond products are not intended for
applications wherein failure of Winbond products could result or lead to a situation wherein personal injury,
death or severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify Winbond for any damages resulting from such improper use or sales.