For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
General Description
Features
Functional Diagram
Single Supply: Vdd = +2.75 to +5.5V
Low Noise Figure: 1.5 dB
High Output IP3: +37 dBm
No External Matching Required
Electrical Speci cations, TA = +25° C, Vdd= +5V
Typical Applications
The HMC374 / HMC374E is ideal for:
• Cellular/PCS/3G
• WCS, MMDS & ISM
• Fixed Wireless & WLAN
• Private Land Mobile Radio
The HMC374 & HMC374E are general purpose broad
band Low Noise Ampli ers (LNA) for use in the 0.3 -
3 GHz frequency range. The LNA provides 15 dB of
gain and a 1.5 dB noise gure from a single positive
supply of +2.75 to +5.5V. The low noise gure coupled
with a high P1dB (22 dBm) and high OIP3 (37 dBm)
make this part ideal for cellular applications. The
compact LNA design utilizes on-chip matching for
repeatable gain and noise gure performance. To
minimize board area the design is offered in a low cost
SOT26 package that occupies only 0.118” x 0.118”.
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 0.3 - 1.0 1.0 - 2.0 2.0 - 3.0 GHz
Gain 12 15 10 13 6 9 dB
Gain Variation Over Temperature 0.01 0.02 0.01 0.02 0.01 0.02 dB/°C
Noise Figure 1.5 1.9 1.6 2.0 1.8 2.2 dB
Input Return Loss 5 8 13 dB
Output Return Loss 7 9 9 dB
Output 1 dB Compression (P1dB) 22 22 22 dBm
Saturated Output Power (Psat) 23 23 23 dBm
Output Third Order Intercept (IP3) 37 37 37 dBm
Supply Current (Idd) (Vdd = +5V) 90 90 90 mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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-20
-15
-10
-5
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3 3.5 4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
Input Return Loss vs. Temperature Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Noise Figure vs. Temperature Output IP3 vs. Temperature
0
4
8
12
16
20
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
RETURN LOSS(dB)
FREQUENCY (GHz)
-12
-10
-8
-6
-4
-2
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
RETURN LOSS(dB)
FREQUENCY (GHz)
0
1
2
3
4
5
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
+25C
+85C
-40C
NOISE FIGURE(dB)
FREQUENCY (GHz)
30
31
32
33
34
35
36
37
38
39
40
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
OIP3(dBm)
FREQUENCY (GHz)
HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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P1dB vs. Temperature
Power Compression @ 2 GHzReverse Isolation vs. Temperature
Psat vs. Temperature
Gain, Noise Figure & Power vs.
Supply Voltage @ 2 GHz
9
11
13
15
17
19
21
23
25
0
1
2
3
4
5
6
7
8
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
Gain
P1dB
Noise Figure
GAIN (dB), P1dB (dBm)
NOISE FIGURE (dB)
Vdd (Vdc)
-5
0
5
10
15
20
25
30
35
-20 -15 -10 -5 0 5 10 15
Pout
Gain
PAE
Pout (dBm), Gain (dB), PAE (%)
INPUT POWER (dBm)
-30
-25
-20
-15
-10
-5
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
ISOLATION (dB)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
Psat(dBm)
FREQUENCY (GHz)
15
16
17
18
19
20
21
22
23
24
25
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 3.3
+25C
+85C
-40C
P1dB(dBm)
FREQUENCY (GHz)
90
92
94
96
98
100
102
104
-20 -15 -10 -5 0 5 10 15
Idd (mA)
INPUT POWER (dBm)
Current vs. Power @ 2 GHz
HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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Outline Drawing
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Drain Bias Voltage (Vdd) +7.0 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc) 15 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 7.5 mW/°C above 85 °C) 0.488 W
Thermal Resistance
(channel to lead) 133 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V) Idd (mA)
2.7 89
3.0 89
5.0 90
5.5 90
HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC374 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H374
XXXX
HMC374E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 374E
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
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8 - 64
Pin Number Function Description Interface Schematic
1,4 N/C These pins may be connected to RF/DC ground.
Performance will not be affected.
2, 5 GND These pins must be connected to RF/DC ground.
3IN This pin is DC coupled.
An off-chip DC blocking capacitor is required.
6OUT RF output and DC Bias for the output stage.
See application circuit for off-chip components.
Pin Descriptions
Application Circuit
Recommended Component Values
C1, C2 150 pF
C3 1,000 pF
C4 4.7 μF
L1 27 nH
HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - SMT
8
8 - 65
Evaluation PCB
The circuit board used in the nal application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads should be connected directly to the
ground plane similar to that shown above. A suffi-
cient number of via holes should be used to connect
the top and bottom ground planes. The evaluation
circuit board shown is available from Hittite upon
request.
List of Materials for Evaluation PCB 109258 [1]
Item Description
J1, J2 PCB Mount SMA Connector
J3, J4 DC Pin
C1, C2 150 pF Capacitor, 0402 Pkg.
C3 1000 pF Capacitor, 0603 Pkg.
C4 4.7 Capacitor, Tantalum
L1 27 nH Inductor, 0603 Pkg.
U1 HMC374 / HMC374E Ampli er
PCB [2] 109256 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
HMC374 / 374E
SMT PHEMT LOW NOISE
AMPLIFIER, 0.3 - 3.0 GHz
v00.0405
