signetics Military Bipolar Memory Products DESCRIPTION The 82S126A and 82S129A are field programmable, which means that custom patterns are immediately available by follawing the Signetics Generic | fusing procedure. The 82S126A and 82S129A devices ara supplied with all outputs at a logical Low. Outputs are programmed to a logic High level at any spacified address by fusing the Ni-Cr link matrix. These devices includes on-chip decoding and 2 chip enable inputs for ease of Memory expansion. They faature either Open collector or 3-State outputs for Optimization of word expansion in bused organizations. ABSOLUTE MAXIMUM RATINGS 825126A 825129A 1K-Bit TTL Bipolar PROM Product Specification FEATURES Address access time: 35ns max @ Input loading: -150,A max On-chip address decoding @ Output options: - 82S126A: Open collector - 82S129A: 3-State @ No separate fusing pins Unprogrammed outputs are Low level Fully TTL compatible APPLICATIONS Prototyping/volume production Sequential controllers @ Microprogramming Hardwired algorithms Control store Random logic * Code conversion ORDERING INFORMATION DESCRIPTION ORDER CODE 16-pin Ceramic 82S126A/BEA, Dual-In-Line 300mil-wide | 82S129A/BEA 82S126A/BFA, 16-pin Ceramic FlatPack 82S129A/BFA SYMBOL PARAMETER RATING Voc Supply voltage +7 Vi input +55 Vo Output 126A) 45.5 Vo Off-State (82S1 +55 Ta temperature -5 to +125 T. -65 to +150 PIN CONFIGURATION BLOCK DIAGRAM Ay OT YT | appress =| 4:92 | UNES | DECODER! | 32 x 32 MATRIX . Ay ot a s Aa (3p A EE 4 As &g Ot 18 18 14 18 Ay 2] mux | mux | MUX | Mux Ao ay 0+ ; | {[ [ | Az cE _d_-> 4 OUTPUT DRIVERS GND TE, oy O2 Og 4 OUTPUT LINES October 14, 1987 761 853-0255 FOO186Signetics Military Bipolar Memory Products Product Specification 1K-Bit TTL Bipolar PROM (256 x 4) 82S126A, 82S129A DC ELECTRICAL CHARACTERISTICS -55C < Ty < +125C, 4.5V < Vog <5.5V SYMBOL PARAMETER TEST CONDITIONS?2 LIMITS UNIT Min | Typ | Max Input voltage Vir Low 0.8 v Vin High 2.0 v Vix Clamp Voc = 4.5V, | = -18mA -1.2 Vv Output voltage TE, 2=Low Vor Low Ig = 16mA Os Vv Vou High (82S129A) Veo = 4.5), Ig = -2.0mA 2.4 Vv Input current Voc = 5.5V te Low V, = 0.45V -150 pA te High Vy, = 5.5V 40 pA Output current Voc = 5.5V louk Leakage (82S126A) CE, or CE = High, Vo = 5.5V 40 pA loz Hi-Z state (B2S129A) TE, or TE2 = High, Vo = 5.5V 40 pA TE, or CE = High, Vo = 0.4V -40 pA los Short circuit (82S129A)3 Voc = 5.5V, TE, 2 = Low, Vo = OV, High stored -15 -85 mA Supply curren lec TE, or CE = High, Voc = 5.5V 125 mA Capacitance TE, or TEs = High, Voc = 5.0V Cw Input Vv, =2.0V 5 10 pF Cour Output Vo = 2.0V 8 13 pF AC ELECTRICAL CHARACTERISTICS -55C < Ty < +125C, 4.5V < Voc < 5.5V SYMBOL PARAMETER To FROM LIMITS UNIT Min Typ Max tea Access time Output Address 17 35 ns toe Access time4 Output Chip Enable 10 20 ns too Disable time Output Chip Disable 6 15 ns NOTES: 1. Positive current is defined as into the terminal referenced. . All voltages with respect to network ground. . Duration of short circuit should not exceed 1 second. . Typical values are at Voc = SV, Ta = +25C. 2 3 4. Tested at an address cycle time of tps. 6. Guaranteed, but not tested. October 14, 1987 762Signetics Military Bipolar Memory Products Product Specification 1K-Bit TTL Bipolar PROM (256 x 4) 82S126A, 82S129A TEST LOAD CIRCUITS VOLTAGE WAVEFORMS oc 27 w vow * NEGATIVE owl Ay PULSE vu vu a 0.34 0.3V ov om 5.0 omy A2 I TTHLt tuk) > O~m] Ag Onn Ay O4+9o Ry l- TTLKt) tTHut mal < Om] As DUT ; 27 27 aev - TIVE O-md Ag o|o c, INCLUDES Scope PULSE vu vu O-m] A7 Re 1 CAPACITANCE 0,3V w K_9.3 ov O-m] Ag Om) CE == Input Pulse Definitions O-m| TE, GND + ~ INPUT PULSE CHARACTERISTICS Vu Rep. Rate | Pulse Width Tuy tH 1.6V MHz 500ns s5ns sSns NOTE: Ry = 2709, Ro = 6008, Cy 50pF. TIMING DIAGRAMS 3.0 ADDRESS SK vu ov cE ov Vou Vu Vou a tA Vue 1.5 3.0 ADDRESS ov _, ft 3.0 cE vu Yu Va ov Hi-Z VM K tte > uM f< ce Vig = 1.54 October 14, 1987 763