1014-6A 6 Watts, 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LV-1 The 1014-6A is an internally matched, COMMON BASE transistor capable of providing 6 watts of CW RF Output power across the 1000-1400 MHz band. This transistor is specifically designed for microwave broadband applications. It utilizes gold metalization and diffused ballasting to provide high reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 19 Maximum Voltage and Current Collector to Base Voltage (BVces) 50 Emitter to Base Voltage (BVebo) 3.5 Collector Current (Ic) 1.0 Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A C C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS Pout Pin Pg c Power Output Power Input Power Gain Collector Efficiency VSWR Load Mismatch Tolerance TEST CONDITIONS MIN F = 1150 MHz 6.0 TYP MAX 1.2 Vcc = 35 Volts Pulse width = 20 s LTDF = 1% 7.0 7.5 40 UNITS W W dB % 10:1 FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces Icbo Cob hFE 1 jc Emitter to Base Breakdown Collector to Emitter Breakdown Collector Leakage Current Capacitance DC - Current Gain Thermal Resistance Ie = 3.0 mA Ic = 25 mA Vcb = 28 V Vcb = 28 V, f = 1 MHz Vce = 5V, Ic = 100 mA 3.5 50 V V mA pF 1.0 6.5 20 100 9.0 C/W GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.GHZ.COM OR CONTACT OUR FACTORY DIRECTLY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120