H24U2GTM1BRH - SK Hynix - Datasheet.Directory

▶DRAM and NAND Flash memories are focus products

▶CMOS Image Sensors will diversify Hynix product portfolio

▶2009 Revenues of USD $6.2B

▶Market capitalization of USD $11.7B as of December 2009

▶Global presence with 3 manufacturing sites and 30 sales offices worldwide

▶20,200 employees worldwide

The simply designed symbolic mark of superposition of two circles implies Hynix's will to

develop environment-friendly products.

The image of a sprout and green wings representing reborn nature symbolizes Hynix's

volitional environmental management initiative. The 'Eco-mark' conveys our passions to

contribute to customers and society with ecological practices (Environment Consciousness

Outreach), and environmental awareness of each employee (Environment Creates Ourselves).

Corporate Profile

Hynix Semiconductor is a leading supplier of advanced semiconductor

memory solutions and Image sensor products. We design, develop,

manufacture and market a wide variety of DRAM and NAND Flash memories

and CMOS Image Sensors (CIS). These memory components are essential in

today’s leading-edge computing, consumer and wireless communications

applications. Image Sensors are used in a wide range of portable consumer

electronics products such as handsets and handheld games.

We protect the environment with our products

Recent

Accomplishments

2010 02 Developed 26nm 64Gb NAND Flash memory

01 Developed the World’s First 2Gb Mobile Low Power DDR2 DRAM

2009 12 Introduced the World's First 40nm Class 2Gb GDDR5 DRAM

11 Acquired Intel Validation for 40nm Class 2Gb DDR3 Products

10 Introduced the Second Generation 1Gb DDR3

08 Introduced 4Gb Mobile DDR SDRAM Supported on Intel’s Moorestown Platform

04 Developed the world’s first Low Power-High Speed Mobile 1Gb DDR2 DRAM

03 Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation

02 Developed the world’s first 44nm DDR3 DRAM

01 Acquired Intel validation for the world’s first ultra-high speed DDR3 based

module for servers 4GB ECC UDIMM

2008 12 Developed the World’s First 2Gb Mobile DRAM

11 Introduced Industry's Fastest 7Gbps, 1Gb GDDR5 Graphics DRAM

04 Developed the world's fastest Mobile LPDDR2

02 Introduced 2-Rank 8GB DDR2 RDIMM

01 Announced 800MHz, 1GB/2GB UDIMM Validation

2007 11 Acquired Intel validation for 1Gb DDR2 DRAM

Developed industry's first 1Gb GDDR5 DRAM

09 Developed the world's first NAND Flash MCP with 24 stacked chips

08 Developed industry's fastest, smallest 1Gb Mobile DRAM

05 Acquired the industry's first validation on DDR3 DRAMs from Intel

03 Developed the world's fastest ECC Mobile DRAM

01

Developed the fastest memory module based on 'Wafer Level Package' technology

2006 12 Announced industry's first 60nm 1Gb DDR2 800MHz based modules

Developed the world's fastest 200MHz 512Mb mobile DRAM

09 Launched 300mm research fab line

03 Acquired the industry's first validation on 80nm 512Mb DDR2 DRAMs from Intel

01 Announced joint development plan of DOC H3 (new generation DiskOnChip

embedded flash drive) with M-Systems

2005 12 Developed the world's first 512Mb GDDR4, the industry's fastest and highest

density graphics DRAM

11 Launched the industry's first JEDEC standard 8GB DDR2 R-DIMM

04

Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu Province, China

2004 03 Developed the industry's first ultra-high speed DDR SDRAM 550MHz

Acquired 1Gb DDR2 SDRAM validation from Intel

02 Developed NAND Flash memory

2003 08 Developed the world's first DRAM 1Gb DDR2

07 Developed the world's first ultra-high speed DDR500

06 Acquired the industry's first Intel validation for 512Mb DDR400

05 Launched production on 0.10-micron process technology

Launched volume production of ultra-low power 256 Mb SDRAM

04 Signed agreement with STMicroelectronics to cooperate in NAND flash

memory business

03 Introduced the world's first commercially applicable mega-level FeRAM

2002 10 Developed 0.10-micron 512MB DDR

08 Developed the world's first high-density, wide-bandwidth 256MB DDR

06 Developed the world's first 256MB SDR SDRAM for high-end consumer

application

03 Developed 1G DDR DRAM module

2001 12 Developed the world's first 128Mb DDR SDRAM for graphics

08 Completed spun-off from Hyundai Group

03 Changed the Company name to "Hynix Semiconductor Inc."

1999 10 Merged LG Semiconductor Co., Ltd.

1998 09 Developed 64M DDR synchronous DRAM

1997 05 Developed the world's first 1G synchronous DRAM

1995 10 Developed the world's first 256M SDRAM

1993 09 Acquired ISO 9001 certification on semiconductor category

1992 09 Developed 64M DRAM

1991 08 Developed 16Mb DRAM

1989 09 Developed 4M DRAM

1988 01 Developed 1M DRAM

1986 04 Established Semiconductor Research Institute

1985 10 Started mass production of 256K DRAM

1983 02 Founded Hyundai Electronics Industries Co., Ltd.

Main

Memory

A crossover to mobile computers from the traditional desktop

has already occurred. Declining prices is the primary driving

factors, especially in light of the current global economic

conditions. Mobility and weight are other features that make

mobile computers attractive to consumers, in addition to the

computing power that now rival desktops

The technology leap from DDR2 to DDR3 doubles system

performance. As DDR3 offers superior performance and power

savings, notebooks are rapidly adopting DDR3 memory.

With rapid transition trend to DDR3, processor makers are also

supporting DDR3 platforms up to speeds of 1333Mbps.

Hynix estimates DDR3 1333Mbps portion in notebook will be

around 70% by the second half of 2010.

SODIMM

PC & Server

Memory

General Description

Users now demand a powerful, full-featured mobile system, with low power consumption, extended battery life and connectivity.

There is a lot of concern about protecting the environment and it is quickly becoming one of the top priorities. Highly virtualized

applications such as data centers, servers and supercomputers, could take advantage of the low power features of the DDR3

SDRAM to enable cooler, power efficient systems.

Hynix is responding to the industry demand for eco-friendly or 'green' products that reduce power consumption, utility expenditures,

improve reliability and reduce carbon emissions. The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than

legacy or competing solutions. The 1.35V (DDR3L) product will yield an additional 20% power savings. It will be an attractive

solution for applications requiring compliance to energy star specifications. This product would also be ideal in mobile applications,

such as notebooks, where it markedly extends battery life.

The new design philosophy adopted on the second generation 1Gb DDR3, will also be applied to future high density DRAM

components from Hynix. The new 44nm process along with Hynix’s design optimization and internal signaling innovations, reduces

power consumption and enhances performance. Devices operating at 1.5V and 1.35V (Low Voltage) exhibit similar performance

characteristics. The demand for low power consumption in both mobile system like notebooks and server systems such as

datacenters, is the emerging trend.

Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with technology

advancements such as this 40nm class product.

Transition to Notebook Form Factor Speed Transition in Notebook

Density 4GB So-DIMM

Organization 512Mx64

Speed 1333 Mbps

Number of Rank 2 Ranks

RDIMM

Density 16GB RDIMM

Organization 2Gx72

Speed 1066 Mbps

Number of Rank 4 Ranks

5

DDR2 SDRAM MODULE (240pin-UDIMM)

4GB 512Mx64 256Mx8 DDR2 800-666 HMP351U6AFR8C-S6 FBGA (60ball) 2 30mm Now

512Mx72 256Mx8 DDR2 800-666 HMP351U7AFR8C-S6 FBGA (60ball) 2 30mm Now

HYMP125U64CP8-S5 FBGA (60ball) 2 30mm Now

256Mx64 128Mx8 DDR2 800-555 HMP125U6EFR8C-S5 FBGA (60ball) 2 30mm Now

2GB HMP125U6NFR8C-S5 FBGA (60ball) 2 30mm Q2 ’10

256Mx72 128Mx8 DDR2 800-555 HYMP125U72CP8-S5 FBGA (60ball) 2 30mm Now

1.8V HMP125U7EFR8C-S5 FBGA (60ball) 2 30mm Now

HYMP112U64CP8-S5 FBGA (60ball) 1 30mm Now

128Mx64 128Mx8 DDR2 800-555 HMP112U6EFR8C-S5 FBGA (60ball) 1 30mm Now

1GB HMP112U6NFR8C-S5 FBGA (60ball) 1 30mm Q2 ’10

128Mx72 128Mx8 DDR2 800-555 HYMP112U72CP8-S5 FBGA (60ball) 1 30mm Now

HMP112U7EFR8C-S5 FBGA (60ball) 1 30mm Now

512MB 64Mx64 64Mx16 DDR2 800-555 HYMP164U64CP6-S5 FBGA (60ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

■FBD P/N xx : (AMB vender)(Revison) ■AMB vender N: intel, D: IDT, E NEC

Main Memory

Product Line-up

DDR2 SDRAM MODULE (240pin-RDIMM)

8GB 1Gx72 512Mx4 DDR2 800-666 HMP31GP7AFR4C-S6 FBGA (60ball) 2 30mm Now

256Mx4 (DDP) DDR2 667-555 HYMP31GP72CMP4-Y5 FBGA (63ball) 4 30mm Now

256Mx4 DDR2 800-555 HYMP151P72CP4-S5 FBGA (60ball) 2 30mm Now

4GB 512Mx72 HMP151P7EFR4C-S5 FBGA (60ball) 2 30mm Now

1.8V 256Mx8 DDR2 800-555 HMP351P7AFR8C-S5 FBGA (60ball) 2 30mm Now

128MX8 DDR2 800-555 HYMP125P72CP8-S5 FBGA (60ball) 2 30mm Now

HMP125P7EFR8C-S5 FBGA (60ball) 2 30mm Now

2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4-S5 FBGA (60ball) 1 30mm Now

HMP125P7EFR4C-S5 FBGA (60ball) 1 30mm Now

128Mx8 DDR2 667-555 HYMP112P72CP8-Y5 FBGA (60ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR2 SDRAM MODULE (240pin-VLP RDIMM)

4GB 512Mx72 256x4(DDP) DDR2 667-555 HYMP351P72CMP4L-Y5 FBGA (63ball) 2 18.3mm Now

2GB 256Mx72 256MX4 DDR2 800-555 HYMP125P72CP4L-S5 FBGA (60ball) 2 18.3mm Now

1.8V HMP125V7EFR4C-S5 FBGA (60ball) 2 18.3mm Now

1GB 128Mx72 128Mx8 DDR2 800-555 HYMP112P72CP8L-S5 FBGA (60ball) 1 18.3mm Now

HMP112V7EFR8C-S5 FBGA (60ball) 2 18.3mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR2 SDRAM MODULE (200pin-SODIMM)

4GB 512Mx64 256Mx8 DDR2 800-666 HMP351S6AFR8C-S6 FBGA (60ball) 2 30mm Now

HYMP125S64CP8-S5 FBGA (60ball) 2 30mm Now

2GB 256Mx64 128Mx8 DDR2 800-555 HMP125S6EFR8C-S5 FBGA (60ball) 2 30mm Now

1.8V HMP125S6NFR8C-S5 FBGA (60ball) 2 30mm Q2 ’10

1GB 128Mx64 64Mx16 DDR2 800-555 HYMP112S64CP6-S5 FBGA (60ball) 2 30mm Now

HMP112S6EFR6C-S5 FBGA (60ball) 2 30mm Now

512MB 64Mx64 64Mx16 DDR2 800-555 HYMP164S64CP6-S5 FBGA (60ball) 1 30mm Now

HMP164S6EFR6C-S5 FBGA (60ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR2 SDRAM MODULE (240pin-FBDIMM)

512Mx4 DDR2 800-666 HMP31GF7EMR4C-S6xx FBGA (63ball) 4 30.35mm Now

8GB 1Gx72 (DDP) HYMP31GF72CMP4xx-S6 FBGA (63ball) 4 30.35mm Now

512Mx4 DDR2 800-666 HMP31GF7AFR4C-S6xx FBGA (60ball) 2 30.35mm Now

256Mx4 DDR2 800-555 HMP151F7EFR4C-S5xx FBGA (60ball) 2 30.35mm Now

4GB 512Mx72 HYMP151F72CP4xx-S5 FBGA (60ball) 2 30.35mm Now

1.8V 128Mx8 DDR2 800-555 HMP151F7EFR8C-S5xx FBGA (60ball) 4 30.35mm Now

HYMP151F72CP8xx-S5 FBGA (60ball) 4 30.35mm Now

2GB 256Mx72 128MX8 DDR2 800-555 HMP125F7EFR8C-S5xx FBGA (60ball) 2 30.35mm Now

HYMP125F72CP8xx-S5 FBGA (60ball) 2 30.35mm Now

1GB 128Mx72 128Mx8 DDR2 800-555 HMP112F7EFR8C-S5xx FBGA (60ball) 1 30.35mm Now

HYMP112F72CP8xx-S5 FBGA (60ball) 1 30.35mm Now

8GB 1Gx72 512Mx4 DDR2 667-555 HMP31GL7AFR4C-Y5xx FBGA (60ball) 2 30.35mm Now

4GB 512Mx72 256Mx4 DDR2 667-555 HMP151L7EFR4C-Y5xx FBGA (60ball) 2 30.35mm Now

HYMP151L72CP4xx-Y5 FBGA (60ball) 2 30.35mm Now

1.55V 2GB 256Mx72 128MX8 DDR2 667-555 HMP125L7EFR8C-Y5xx FBGA (60ball) 2 30.35mm Now

HYMP125L72CP8xx-Y5 FBGA (60ball) 2 30.35mm Now

1GB 128Mx72 128Mx8 DDR2 667-555 HMP112L7EFR8C-Y5xx FBGA (60ball) 1 30.35mm Now

HYMP112L72CP8xx-Y5 FBGA (60ball) 1 30.35mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

6

Main Memory

Product Line-up

DDR3 SDRAM MODULE(240pin-UDIMM)

4GB 512Mx64 256Mx8 1333-999 HMT351U6BFR8C-H9 FBGA (82ball) 2 30mm Now

512Mx72 256Mx8 1333-999 HMT351U7BFR8C-H9 FBGA (82ball) 2 30mm Now

256Mx64 128Mx8 1333-999 HMT125U6TFR8C-H9 FBGA (78ball) 2 30mm Now

1.5V 2GB 256Mx8 1333-999 HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now

256Mx72 128Mx8 1333-999 HMT125U7TFR8C-H9 FBGA (78ball) 2 30mm Now

256Mx8 1333-999 HMT325U7BFR8C-H9 FBGA (82ball) 1 30mm Now

1GB 128Mx64 128Mx8 1333-999 HMT112U6TFR8C-H9 FBGA (78ball) 1 30mm Now

128Mx72 128Mx8 1333-999 HMT112U7TFR8C-H9 FBGA (78ball) 1 30mm Now

4GB 512Mx72 256Mx8 1333-999 HMT351U7BFR8A-H9 FBGA (82ball) 2 30mm Now

1.35V 2GB 256Mx72 256Mx8 1333-999 HMT325U7BFR8A-H9 FBGA (82ball) 1 30mm Now

128Mx8 1333-999 HMT125U7TFR8A-H9 FBGA (78ball) 2 30mm Now

1GB 128Mx72 128Mx8 1333-999 HMT112U7TFR8A-H9 FBGA (78ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR3 SDRAM MODULE(204pin-SODIMM)

4GB 512Mx64 256Mx8 1333-999 HMT351S6BFR8C-H9 FBGA (82ball) 2 30mm Now

128Mx8 1333-999 HMT125S6TFR8C-H9 FBGA (78ball) 2 30mm Now

1.5V 2GB 256Mx64 256Mx8 1333-999 HMT325S6BFR8C-H9 FBGA (82ball) 1 30mm Now

128Mx16 1333-999 HMT325S6BFR6C-H9 FBGA (96ball) 2 30mm Now

1GB 128Mx64 128Mx8 1333-999 HMT112S6TFR8C-H9 FBGA (78ball) 1 30mm Now

64Mx16 1333-999 HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now

1.35V 4GB 512Mx64 256Mx8 1333-999 HMT351S6AFR8A-H9 FBGA (82ball) 2 30mm Now

2GB 256Mx64 256Mx8 1333-999 HMT325S6AFR8A-H9 FBGA (82ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR3 SDRAM MODULE(240pin-RDIMM)

16GB 2Gx72 1Gx4 (DDP) 1333-999 HMT42GR7BMR4C-H9 FBGA (82ball) 4 30mm Now

8GB 1Gx72 512Mx4 1333-999 HMT31GR7BFR4C-H9 FBGA (82ball) 2 30mm Now

256Mx8 1333-999 HMT31GR7BFR8C-H9 FBGA (82ball) 4 30mm Now

256Mx8 1333-999 HMT351R7BFR8C-H9 FBGA (82ball) 2 30mm Now

1.5V 4GB 512Mx72 512Mx4 1333-999 HMT351R7BFR4C-H9 FBGA (82ball) 1 30mm Now

256Mx4 1333-999 HMT151R7TFR4C-H9 FBGA (78ball) 2 30mm Now

256Mx8 1333-999 HMT325R7BFR8C-H9 FBGA (82ball) 1 30mm Now

2GB 256Mx72 256Mx4 1333-999 HMT125R7TFR4C-H9 FBGA (78ball) 1 30mm Now

128Mx8 1333-999 HMT125R7TFR8C-H9 FBGA (78ball) 2 30mm Now

1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8C-H9 FBGA (78ball) 1 30mm Now

16GB 2Gx72 1Gx4 (DDP) 1333-999 HMT42GR7BMR4A-H9 FBGA (82ball) 4 30mm Q2 ’10

8GB 1Gx72 512Mx4 1333-999 HMT31GR7BFR4A-H9 FBGA (82ball) 2 30mm Now

256Mx8 1333-999 HMT31GR7BFR8A-H9 FBGA (82ball) 4 30mm Now

256Mx8 1333-999 HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now

1.35V 4GB 512Mx72 128Mx8 1333-999 HMT151R7TFR8A-H9 FBGA (78ball) 4 30mm Now

256Mx4 1333-999 HMT151R7TFR4A-H9 FBGA (78ball) 2 30mm Now

256Mx8 1333-999 HMT325R7BFR8A-H9 FBGA (82ball) 1 30mm Now

2GB 256Mx72 256Mx4 1333-999 HMT125R7TFR4A-H9 FBGA (78ball) 1 30mm Now

128Mx8 1333-999 HMT125R7TFR8A-H9 FBGA (78ball) 1 30mm Now

1GB 128Mx72 128Mx8 1333-999 HMT112R7TFR8A-H9 FBGA (78ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR3 SDRAM MODULE(240pin-VLP RDIMM)

8GB 1Gx72 1Gx4(DDP) 1333-999 HMT41GV7BMR4C-H9 FBGA (82ball) 2 18.75mm Now

512Mx8(DDP) 1333-999 HMT41GV7BMR8C-H9 FBGA (82ball) 4 18.75mm Now

4GB 512Mx72 512Mx4(DDP) 1333-999 HMT351V7BMR4C-H9 FBGA (78ball) 2 18.75mm Now

1.5V 256Mx8 1333-999 HMT351V7BFR8C-H9 FBGA (82ball) 2 18.75mm Now

256Mx4 1333-999 HMT125V7TFR4C-H9 FBGA (78ball) 1 18.75mm Now

2GB 256Mx72 128Mx8 1333-999 HMT125V7TFR8C-H9 FBGA (78ball) 2 18.75mm Now

256Mx8 1333-999 HMT325V7BFR8C-H9 FBGA (82ball) 1 18.75mm Now

1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8C-H9 FBGA (78ball) 1 18.75mm Now

8GB 1Gx72 1Gx4(DDP) 1333-999 HMT41GV7BMR4A-H9 FBGA (82ball) 2 18.75mm Q2 ’10

512Mx8(DDP) 1333-999 HMT41GV7BMR8A-H9 FBGA (82ball) 4 18.75mm Q2 ‘10

4GB 512Mx72 512Mx4(DDP) 1333-999 HMT351V7BMR4A-H9 FBGA (78ball) 2 18.75mm Now

1.35V 256Mx8 1333-999 HMT351V7BFR8A-H9 FBGA (82ball) 2 18.75mm Now

256Mx4 1333-999 HMT125V7TFR4A-H9 FBGA (78ball) 1 18.75mm Now

2GB 256Mx72 128Mx8 1333-999 HMT125V7TFR8A-H9 FBGA (78ball) 2 18.75mm Now

256Mx8 1333-999 HMT325V7BFR8A-H9 FBGA (82ball) 1 18.75mm Now

1GB 128Mx72 128Mx8 1333-999 HMT112V7TFR8A-H9 FBGA (78ball) 1 18.75mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

7

DDR2 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

500MHz (2.0ns) H5PS1G63EFR-20L FBGA (84ball) 8Bank, 1.8V / 1.8V Now

1Gb 64Mx16 400MHz (2.5ns) H5PS1G63EFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now

400MHz (2.5ns) HY5PS1G1631CFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V Now

600MHz (1.6ns) H5PS5162FFR-16C FBGA (84ball) 4Bank, 2.0V / 2.0V Now

500MHz (2.0ns) H5PS5162FFR-20C FBGA (84ball) 4Bank, 2.0V / 2.0V Now

500MHz (2.0ns) H5PS5162FFR-20L FBGA (84ball) 4Bank, 1.8V / 1.8V Now

400MHz (2.5ns) H5PS5162FFR-25C FBGA (84ball) 4Bank, 1.8V / 1.8V Now

512Mb 32Mx16 500MHz (2.0ns) HY5PS121621CFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V Now

450MHz (2.2ns) HY5PS121621CFP-22 FBGA (84ball) 4Bank, 2.0V / 2.0V Now

400MHz (2.5ns) HY5PS121621CFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V Now

350MHz (2.8ns) HY5PS121621CFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V Now

300MHz (3.3ns) HY5PS121621CFP-33 FBGA (84ball) 4Bank, 1.8V / 1.8V Now

DDR3 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,000MHz (1.0ns) H5TQ2G63BFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

2Gb 128Mx16 900MHz (1.1ns) H5TQ2G63BFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

800MHz (1.2ns) H5TQ2G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

900MHz (1.1ns) H5TS1G63BFR-11C FBGA (96ball) 8Bank, 1.8V / 1.8V Now

800MHz (1.2ns) H5TS1G63BFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now

800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

700MHz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

1Gb 64Mx16 800MHz (1.2ns) H5TS1G63AFR-12C FBGA (96ball) 8Bank, 1.8V / 1.8V Now

700MHz (1.4ns) H5TS1G63AFR-14C FBGA (96ball) 8Bank, 1.8V / 1.8V Now

600MHz (1.6ns) H5TS1G63AFR-16C FBGA (96ball) 8Bank, 1.8V / 1.8V Now

700MHz(1.4ns) H5TQ1G63AFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

600MHz (1.6ns) H5TQ1G63AFR-16C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

500MHz (2.0ns) H5TQ1G63AFR-20C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

GDDR5 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

6.0Gbps H5GQ2H24MFR-R0C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10

2Gb 64Mx32 5.5Gbps H5GQ2H24MFR-T3C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10

5.0Gbps H5GQ2H24MFR-T2C FBGA (170ball) 16Bank, 1.5V / 1.5V Q3 '10

6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, TBD Now

5.5Gbps H5GQ1H24AFR-T3C FBGA (170ball) 16Bank, 1.5V /1.5V Now

1Gb 32Mx32 5.0Gbps H5GQ1H24AFR-T2C FBGA (170ball) 16Bank, 1.5V /1.5V Now

4.5Gbps H5GQ1H24AFR-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

3.2Gbps H5GQ1H24AFR-T2L FBGA (170ball) 16Bank, 1.35V / 1.35V Now

GDDR3 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8banks, 1.9V / 1.9V Now

1Gb 32Mx32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8banks, 1.9V / 1.9V Now

900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8banks, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8banks, 1.8V / 1.8V Now

1,300MHz (0.77ns) H5RS5223DFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,200MHz (0.8ns) H5RS5223DFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,000MHz (1.0ns) H5RS5223DFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

900MHz (1.1ns) H5RS5223DFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS5223DFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

512Mb 16Mx32 500MHz (2.0ns) H5RS5223DFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

1,300MHz (0.77ns) H5RS5223CFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,200MHz (0.8ns) H5RS5223CFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,000MHz (1.0ns) H5RS5223CFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

900MHz (1.1ns) H5RS5223CFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS5223CFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

500MHz (2.0ns) H5RS5223CFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS5223CFR-14L FBGA (136ball) 8Bank, 1.5V / 1.5V Now

550MHz (1.8ns) H5RS5223CFR-18C FBGA (136ball) 8Bank, 1.5V / 1.5V Now

Graphics Memory

Product Line-up

9

Consumer

Memory

General Description

We now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while Car navigation systems

provide comfort and convenience. All of these digital consumer appliances need semiconductor memory for performance

improvement, power savings and size reduction. Hynix has full line-up of DRAM (Dynamic RAM) to meet the needs of a wide range

of consumer applications. Hynix offers a family of SDRAM (Synchronous DRAM) in 128Mb~256Mb densities, packaged in TSOP-II

and FBGA offered at industrial temperature range of -40℃to 85℃and featuring very low power consumption. DDR, DDR2 and

DDR3 SDRAMs (Double Data Rate SDRAMs) are available for high-end consumer applications requiring higher data transfer rates.

In many applications, such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3

SDRAM technologies.

Sometimes, the most important things are not be visible. Although hidden from view, Hynix Consumer memories have been used in

a variety of applications offered by a number of companies to realize a multitude of miracles.

Consumer DRAM Readiness Green Solution

LC (Low Current) DDR2 provides a Green Solution

- Eco-friendly & Low power consumption

10

x16 HY57V281620FTP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

128Mb x16 HY5V26FFP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

x16 H57V1262GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

x16 H57V1262GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

x8 HY57V56820FTP 6 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

x16 HY57V561620FTP 6 / H Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

x16 HY5V56FFP 6 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

256Mb x32 HY5V52AFP 6 / H Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

x8 H57V2582GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

x16 H57V2562GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] TSOP 3.3V Now

x16 H57V2562GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

x32 H57V2622GMR 60 / 70 / 75 Normal / Low 0~70 / -40~85 [℃] FBGA 3.3V Now

SDR SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

512Mb x8 H5PS5182FFR E3 / C4 / Y4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x16 H5PS5162FFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x8 HY5PS1G831CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x8 H5PS1G83EFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

1Gb x16 HY5PS1G1631CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x16 H5PS1G63EFR E3 / C4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x32 H5PS1GC2FMR E3 / C4 / Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x8 H5PS2G83AFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

2Gb x16 H5PS2G63EMR Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

x32 H5PS2GC3FMR Y5 / S6 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.8V Now

DDR2 SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

1Gb x8 H5TQ1G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now

x16 H5TQ1G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now

x8 H5TQ2G83AFR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now

2Gb x8 H5TQ2G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now

x16 H5TQ2G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 [℃] Note FBGA 1.5V Now

DDR3 SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

64Mb x16 H5DU6462CTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

128Mb x16 HY5DU281622FTP 4 / 5 / D43 / D4 / J / H Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 H5DU1262GTR FA / FB / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x8 HY5DU568822FTP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 HY5DU561622FTP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 HY5DU561622FFP 4 / D43 / J Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now

256Mb x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now

x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now

x8 HY5DU128822DTP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] TSOP 2.5V Now

x8 HY5DU12822DFP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] FBGA 2.5V Now

x16 HY5DU121622DTP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] TSOP 2.5V Now

512Mb x16 HY5DU121622DFP D43 / J / K / H / L Normal Power 0~70 / -40~85 [℃] FBGA 2.5V Now

x8 H5DU5182ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x8 H5DU5182EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now

x16 H5DU5162ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] TSOP 2.5V Now

x16 H5DU5162EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 [℃] FBGA 2.5V Now

DDR SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

Note : At tOPER 85~95℃, Double refresh rate is required.

Consumer Memory

Product Line-up

11

Mobile

Memory

General Description

Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and

lighter than ever, consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained,

informed, and productive. As consumers life styles become more mobile, there is ever increasing demand for connectivity. Mobile

devices will require high performance memories, with very low power consumption for extended battery life. Devices that use Hynix

Mobile Memory enables everything you love on-the-go. Hynix Mobile Memory products offered in small footprint packages have

superior power saving features useful in all handheld devices such as cellular phones, PDAs, MP3 players, etc. Hynix Mobile

Memories are ideal for portable applications which require very low power consumption. Hynix’s Mobile Business Group offers a

broad variety of products enabling our customers to deliver next-generation devices in time to market

Mobile DRAM

󳢯

Broad Product Line: SDR / DDR, x16 / x32 organizations, 128Mb to 2Gb densities

󳢯

Diverse Packaging Options: Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)

󳢯

Small Form Factor Packages: For use in the most space-constrained handheld applications

󳢯

Low Power Features: Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh

󳢯

Major Applications: Mobile Phone, PDA, MP3 Player, Digital Still Camera, MID(Mobile Internet Device), PND(Portable Navigation

Device), Personal Media Player (PMP), Handheld Game Console, e-book

󳢯

LPDDR2 will be the next generation mainstream. Hynix set the standard for LPDDR2 technology along with LPDDR

MCP

󳢯

Small Form Factor package saves space in Handheld Devices

󳢯

High Capacity Data Storage, High Speed, with Low Power Consumption

󳢯

In-house manufacturing provides cost efficient solutions in a timely manner

󳢯

Major Application - Mobile Phone, Smartphone, PDA Phone, Digital Still Camera, MID (Mobile Internet Device), Wireless

LAN Card, Handheld Game Console, Netbook

e-NAND

󳢯

e-NAND : Combination of NAND Flash and the Flash Controller with MMC interface, in a single package

󳢯

Simple read / write memory using standard MMC 4.3 / 4.4 protocol interface.

󳢯

No additional firmware for NAND management required

󳢯

Controller includes NAND software such as FTL, ECC, FAT-16/32

MCPs in Mobile Application MCP Line-up

12

Mobile SDR

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

64M x 16 166MHz (6.0ns) H55S2G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S2G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

2Gb 32M x 32 166MHz (6.0ns) H55S2G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S2G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 166MHz (6.0ns) H55S2G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 133MHz (7.5ns) H55S2G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S1G62AFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

64M x 16 133MHz (7.5ns) H55S1G62AFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S1G22AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

1Gb 32M x 32 133MHz (7.5ns) H55S1G22AFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 133MHz (7.5ns) H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 166MHz (6.0ns) H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S5162EFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

32M x 16 133MHz (7.5ns) H55S5162EFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S5162DFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

512M 133MHz (7.5ns) H55S5162DFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S5122EFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 32 133MHz (7.5ns) H55S5122EFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H55S5122DFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S5122DFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 16 166MHz (6.0ns) H55S2562JFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

256Mb 133MHz (7.5ns) H55S2562JFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

8M x 32 166MHz (6.0ns) H55S2622JFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S2622JFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

8M x 16 166MHz (6.0ns) H55S1262EFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

128Mb 133MHz (7.5ns) H55S1262EFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

4M x 32 166MHz (6.0ns) H55S1222EFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H55S1222EFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

Mobile DDR

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

64M x 16 200MHz (5.0ns) H5MS2G62MFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS2G62MFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

2Gb 32M x 32 200MHz (5.0ns) H5MS2G22MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS2G22MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 200MHz (5.0ns) H5MS2G32MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 166MHz (6.0ns) H5MS2G32MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS1G62AFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS1G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

64M x 16 200MHz (5.0ns) H5MS1G62MFP-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS1G62MFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS1G62MFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS1G22AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS1G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

1Gb 32M x 32 200MHz (5.0ns) H5MS1G22MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS1G22MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS1G22MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS1G32AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 166MHz (6.0ns) H5MS1G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS1G32MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 166MHz (6.0ns) H5MS1G32MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS1G32MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS5162EFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS5162EFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

32M x 16 200MHz (5.0ns) H5MS5162DFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS5162DFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

512Mb 133MHz (7.5ns) H5MS5162DFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS5122EFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS5122EFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 32 200MHz (5.0ns) H5MS5122DFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz (6.0ns) H5MS5122DFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS5122DFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS2562JFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

16M x 16 166MHz (6.0ns) H5MS2562JFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

256Mb 133MHz (7.5ns) H5MS2562JFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

200MHz (5.0ns) H5MS2622JFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

8M x 32 166MHz (6.0ns) H5MS2622JFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS2622JFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

8M x 16 166MHz (6.0ns) H5MS1262EFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

128Mb 133MHz (7.5ns) H5MS1262EFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

4M x 32 166MHz (6.0ns) H5MS1222EFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz (7.5ns) H5MS1222EFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

* All SDRAM is Available For Lead Free or Lead & Halogen Free

Mobile Memory

Product Line-up

13

Features F48 16G MLC F41 32G MLC F32 32G MLC

Voltage 3.3V 3.3V 3.3V

Organization X8 X8 x8

Page & Block size (P/B) 4KB+128B / 512KB 4KB+224B / 512KB 8KB+448B / 2MB

tRC(min) / tWC (min) 25ns 25ns 25ns

tR (max) 60us 60us 200us

Program time (typ.) 800us 1000us 1600us

Erase time (typ.) 2.5ms 3ms 2.5ms

Operating current MONO / DDP 15mA(typ.) ~ 30mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)

QDP / DSP 20mA(typ.) ~ 40mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 60mA(max)

Copyback O with Data out O with Data out O with Data out

Function Cache Program - O O

Cache Read - O O

2 Plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase

Enhanced Data Out O O O

Special / Function OTP O O O

Unique ID O O O

Endurance / Package

E/W Cycles / Retention 5K / 10 years 5K / 10 years 3K / 10 years (TBD)

NOP 1 1 1

Package TSOP / VLGA / COP VLGA VLGA / TSOP

NAND Flash

Memory

General Description

Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging (TSOP, VLGA

and FBGA). Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such

as MP3, PMP, Digital camera, Camcorder, Memory card, USB flash drive and other consumer electronics such as Game console,

Navigation. Currently, Hynix NAND Flash Memory is being widely adopted in the mobile handset applications and we are also

developing PC storage solutions based on the NAND Flash chips. To meet the growing demand for high capacity and improved

performance in mobile applications, Hynix is offering HiFFS (Flash File System) software with eHiFFS system that enhances NAND

chip performance and reliability.

NAND Flash Key Features

NAND Flash Applications Hynix NAND Flash

14

Software Support

Hynix SSD

SSD (Solid State Drive)

SSD is one of the fastest growing NAND applications in the world.

Because of its strengths - Speed, Performance, Reliability, and

Power Consumption - many computing devices such as MID, Net

Book, Notebook, Server System, etc have replaced conventional

hard drives with SSD. Hynix offers SSM (Solid State Module) and

SSD for mobile and personal computing devices.

Features Solid State Module Solid State Drive (2.5”, 1.8”)

Standard ATA / IDE Bus Interface SATA 3.0Gbps

Capacities 16GB, 32GB, 64GB 128GB, 256GB

Dimension 54×39×4mm 1.8” : 52.8×77×5mm

2.5” : 69.9×100×7mm

Sustained Performance Read: 100MB/s Read: 200MB/s

- 128KB, MAX Write: 80MB/s Write: 140MB/s

Random Performance Read: 12117 IOPS (48MB/s) Read: 12500 IOPS (50MB/s)

- 4KB, MAX Write: 263 IOPS (1.1MB/s) Write: 4000 IOPS (16MB/s)

Power Consumption Active: 0.6W Active: 2.0W

Stand-by: 0.35W Stand-by: 0.35W

Voltage 5.0V (3.3V) 5.0V (2.5”) / 3.3V (1.8”)

Temperature Range 0℃to 70℃for Operating 0℃to 70℃for Operating

-55℃to 90℃for Storage -55℃to 95℃for Storage

MTBF 1,000,000 Hrs

BER 1 error in 1014 bits transferred

HiFFS Software

HiFFS is a Flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has

Flash memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.

Features

󳢯

Flash memory file system solution for mobile embedded system

󳢯

Higher performance and reliability

󳢯

Fully compatible with FAT 12 / 16 / 32 file system standards

󳢯

Journaling error recovery mechanism

󳢯

Support various Nand Flash memory types such as small block,

large block, MLC and SLC and TLC.

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Efficient bad block management and wear-leveling

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Support UMS(USB Mass Storage) and external Flash memory cards

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Higher read/write performance

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Fast booting

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Support various operating systems such as WinCE, Linux,

Non-OS, Windows Mobile

SSD Key Features

15

HY27US08281A 128Mb 90nm 16KB Mono 3.3V / x8 TSOP/ USOP Now

HY27US08561A 256Mb 90nm 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

HY27US08121B 512Mb 70nm 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

H27U518S2C 512Mb 57nm 16KB Mono 3.3V / x8 TSOP Now

HY27US081G1M 1Gb 70nm 16KB Mono 3.3V / x8 USOP Now

HY27US081G1A 1Gb 57nm 16KB Mono 3.3V / x8 TSOP Now

HY27UF081G2A 1Gb 70nm 128KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

HY27US081G2A 1Gb 70nm 128KB Mono 1.8V / x8 FBGA Now

H27U1G8F2B 1Gb 48nm 128KB Mono 3.3V / x8 TSOP, FBGA Now

H27U1G8F2B 1Gb 48nm 128KB Mono 1.8V / x8 FBGA Now

HY27UF082G2A 2Gb 70nm 128KB Mono 3.3V / x8 TSOP / LGA Now

HY27UF082G2B 2Gb 57nm 128KB Mono 3.3V / x8 TSOP, FBGA Now

HY27UF084G2B 4Gb 57nm 128KB Mono 3.3V / x8 TSOP Now

HY27UG088G5(D)B 8Gb 57nm 128KB DDP 3.3V / x8 TSOP / LGA Now 2CE / Dual CH.

HY27UH08AG5B 16Gb 57nm 128KB QDP 3.3V / x8 TSOP Now 2CE

NAND Flash SLC COMPONENT

PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

H26M01002MAR 512MB 57nm 4Gb 1 3.3V / x8 MMC 4.2 Now

H26M11002AAR 1GB 57nm 8Gb 1 3.3V / x8 MMC 4.2 Now

H26M11001BAR 1GB 48nm 8Gb 1 3.3V / x8 MMC 4.3 Now

H26M21002BAR 2GB 48nm 16Gb 1 3.3V / x8 MMC 4.2 Now

H26M21001CAR 2GB 41nm 16Gb 1 3.3V / x8 MMC 4.3 Now

H26M32002BAR 4GB 48nm 16Gb 2 3.3V / x8 MMC 4.2 Now

H26M32001CAR 4GB 41nm 16Gb 2 3.3V / x8 MMC 4.3 Now

H26M44002AAR 8GB 48nm 16Gb 4 3.3V / x8 MMC 4.2 Now

H26M42001BAR 8GB 41nm 32Gb 2 3.3V / x8 MMC 4.3 Now

H26M54001AJR 16GB 41nm 32Gb 4 3.3V / x8 MMC 4.3 Now

H26M68001MJR 32GB 41nm 32Gb 8 3.3V / x8 MMC 4.3 Now

e-NAND COMPONENT

PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK

H2EUCG8N11YR-C 64Gb 48nm 768KB (192 Block) DDP 3.3V / x8 VLGA EOL Emulated NAND

H2EUDG8P11XR-C 128Gb 48nm 768KB (192 Block) QDP 3.3V / x8 LLGA EOL Emulated NAND

H2EUAG8M2MYR-C 16Gb 41nm 768KB (192 Block) SDP 3.3V / x8 VLGA TBD Emulated NAND

NAND Flash TLC COMPONENT

PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

HY27UT084G2A 4Gb 57nm 256KB Mono 3.3V / x8 TSOP Now

HY27UT088G2A 8Gb 57nm 256KB Mono 3.3V / x8 TSOP Now

H27U8G8T2B 8Gb 48nm 512KB Mono 3.3V / x8 TSOP Now

HY27UU08AG5A 6Gb 57nm 256KB DDP 3.3V / x8 TSOP Now 2CE

H27UAG8T2M 16Gb 48nm 512KB (4KB Page) Mono 3.3V / x8 TSOP / VLGA Now

H27UAG8T2A 16Gb 41nm 512KB (4KB Page) Mono 3.3V / x8 TSOP Now

HY27UW08CGFA 64Gb 57nm 256KB DSP 3.3V / x8 TSOP DSP Now 4CE

HY27UV08BG5A 32Gb 57nm 256KB QDP 3.3V / x8 TSOP Now 2CE

H27UBG8U5M 32Gb 48nm 512KB (4KB Page) DDP 3.3V / x8 TSOP Now 2CE

H27UBG8U5A 32Gb 41nm 512KB (4KB Page) DDP 3.3V / x8 TSOP Now

H27UBG8T2M 32Gb 41nm 512KB (4KB Page) Mono 3.3V / x8 VLGA Now

H27UBG8T2A 32Gb 32nm 2MB (8KB Page) SDP 3.3V / x8 TSOP / VLGA Now

H27UCG8V5M 64Gb 48nm 512KB (4KB Page) QDP 3.3V / x8 TSOP / VLGA Now 2CE

H27UCG8VFA 64Gb 41nm 512KB (4KB Page) QDP 3.3V / x8 TSOP Now

H27UCG8UDM 64Gb 41nm 512KB (4KB Page) DDP 3.3V / x8 VLGA Now Dual CH.

H27UCG8UDA 64Gb 32nm 2MB (8KB Page) DDP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA

H27UDG8WFM 128Gb 48nm 512KB (4KB Page) ODP 3.3V / x8 LSOP Now 4CE

H27UDG8WFMTR-BC 128Gb 48nm 512KB (4KB Page) DSP 3.3V / x8 TSOP DSP Now 4CE

H27UDG8YFMXR-BC 128Gb 48nm 512KB (4KB Page) ODP 3.3V / x8 LLGA Now 4CE

H27UDG8VEM 128Gb 41nm 512KB (4KB Page) QDP 3.3V / x8 VLGA Now 4CE, Dual CH.

H27UDG8VEA 128Gb 32nm 2MB (8KB Page) QDP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA

H27UEG8YEM 256Gb 41nm 512KB (4KB Page) ODP 3.3V / x8 LLGA Now 4CE, Dual CH.

H27UEG8YEA 256Gb 32nm 2MB (8KB Page) ODP 3.3V / x8 TSOP / VLGA 2Q'10 Dual CH. LGA

NAND Flash MLC COMPONENT

PRODUCT DENSITY TECH. BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

TECH. DENSITY STACK

BASE COMPONENT

H24U1GTM3ARH 1GB 48nm 8Gb 1 3.3V / x4 Class-4 Now

H24U2GTM1BRH 2GB 41nm 16Gb 1 3.3V / x4 Class-4 Now

H24U4GUM1ARH 4GB 41nm 16Gb 2 3.3V / x4 Class-6 Now

H24U8GVM1MRH 8GB 41nm 16Gb 4 3.3V / x4 Class-6 Now

H24UAGYM1MRH 16GB 41nm 16Gb 4 3.3V / x4 Class-6 Now

uSD COMPONENT

PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK

TECH. DENSITY STACK

BASE COMPONENT

NAND Flash

Product Line-up

16