IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGB20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyoffering
•verylowturn-offenergy
•lowVCEsat
•lowEMI
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating,halogen-freemouldcompound,RoHS
compliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
G
E
C
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IGB20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO263-3
3
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
4
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Maximumratings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC40.0
20.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 80.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 170.0
85.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
reflow soldering (MSL1 according to JEDEC J-STA-020) 260 °C
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.88 K/W
Thermal resistance, min. footprint
junction - ambient Rth(j-a) 65 K/W
Thermal resistance, 6cm² Cu on
PCB
junction - ambient
Rth(j-a) 40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.95
2.30
2.50
2.40
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 5.1 5.7 V
Zero gate voltage collector current ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
40.0
1500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S
5
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1100 -
Output capacitance Coes - 70 -
Reverse transfer capacitance Cres - 32 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=20.0A,
VGE=15V - 120.0 - nC
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
120
- A
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 16 - ns
Rise time tr- 20 - ns
Turn-off delay time td(off) - 194 - ns
Fall time tf- 11 - ns
Turn-on energy Eon - 0.45 - mJ
Turn-off energy Eoff - 0.24 - mJ
Total switching energy Ets - 0.69 - mJ
Tvj=25°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 16 - ns
Rise time tr- 15 - ns
Turn-off delay time td(off) - 227 - ns
Fall time tf- 14 - ns
Turn-on energy Eon - 0.60 - mJ
Turn-off energy Eoff - 0.36 - mJ
Total switching energy Ets - 0.96 - mJ
Tvj=175°C,
VCC=400V,IC=20.0A,
VGE=0.0/15.0V,
rG=14.6Ω,Lσ=75nH,
Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode (IKP20N60H3) reverse
recovery.
6
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V,
rG=14,6Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
10
20
30
40
50
60
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
7
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
012345678
0
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
5 6 7 8 9 10 11 12
0
10
20
30
40
50
60
70
Tj=25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC=10A
IC=20A
IC=40A
8
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30 35 40
10
100
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 10 15 20 25 30 35 40 45 50
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
1
10
100
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.29mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
min.
max.
9
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=14,6Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
4 8 12 16 20 24 28 32 36 40
0.0
0.5
1.0
1.5
2.0
2.5
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=20A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 10 15 20 25 30 35 40 45 50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=20A,
rG=14,6Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
200 250 300 350 400 450
0.00
0.25
0.50
0.75
1.00
1.25
1.50
Eoff
Eon
Ets
10
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 17. Typicalgatecharge
(IC=20A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
16
120V
480V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
10 12 14 16 18 20
50
100
150
200
250
300
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15
0
3
6
9
12
15
11
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.07041042
9.6E-5
2
0.3070851
6.8E-4
3
0.3198984
0.01084623
4
0.1871538
0.06925485
12
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
01
30-08-2007
Z8B00003324
0.039
0.000
0.026
0.335
0.013
0.037
MIN
0.169
0.046
0.280
0.090
0.386
8.60 0.3390.256
0.575
0.632
0.366
0.177
0.421
0.049
0.144
5.08
2.54
1.00
7.10
2.29
9.80
6.50
9.30
4.50
14.61
16.05
10.70
1.25
3.65
0.70
2
0.00
0.65
0.33
8.51
0.95
4.30
MIN
1.17
1.60
1.78
7.90
10.31
3.00
15.88
16.25
9.50
4.70
10.90
1.45
3.85
MAX
4.57
0.25
1.15
0.65
9.45
0.85
1.40
0.200
0.100
0.028
2
0.063
0.070
0.311
0.406
0.118
0.625
0.640
0.374
0.185
0.429
0.057
0.152
0.010
0.180
0.033
0.026
0.372
0.045
MAX
0.055
0
7.5mm
5
5
0
PG-TO263-3
13
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
t
a
a
b
b
t
d(off)
t
f
t
r
t
d(on)
90% I
C
10% I
C
90% I
C
10% I
C
t
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
90% V
GE
v
GE
(t)
t
t
i
C
(t)
v
CE
(t)
t
t
1
t
4
2% I
C
10% V
GE
2% V
CE
t
2
t
3
14
IGB20N60H3
Highspeedswitchingseriesthirdgeneration
Rev.2.3,2014-03-11
RevisionHistory
IGB20N60H3
Revision:2014-03-11,Rev.2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-07-26 Preliminary datasheet
2.1 2013-12-09 New value IRmax limit at 175°C
2.2 2014-02-26 Without PB free logo
2.3 2014-03-11 Max ratings Vce, Tvj ≥ 25°C
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