Low Distortion Differential RF/IF Amplifier AD8351-EP Enhanced Product FUNCTIONAL BLOCK DIAGRAM -3 dB bandwidth of 2.2 GHz for AV = 12 dB Single-resistor programmable gain: 0 dB AV 26 dB Differential interface Low noise input stage: 2.70 nV/Hz at 70 MHz, AV = 10 dB Low harmonic distortion -79 dBc second at 70 MHz -81 dBc third at 70 MHz Output third-order intercept (OIP3) of 31 dBm at 70 MHz Single-supply operation: 3 V to 5.5 V Low power dissipation: 28 mA at 5 V Adjustable output common-mode voltage Fast settling and overdrive recovery Slew rate of 13,000 V/s Power-down capability AD8351-EP PWUP BIAS CELL VOCM VPOS RGP1 INHI OPHI INLO OPLO COMM RGP2 14821-001 FEATURES Figure 1. ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Extended industrial temperature range: -55C to +105C Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available upon request APPLICATIONS Differential ADC drivers Single-ended-to-differential conversion IF sampling receivers RF/IF gain blocks Surface acoustic wave (SAW) filter interfacing GENERAL DESCRIPTION The AD8351-EP is a low cost differential amplifier useful in RF and IF applications up to 2.2 GHz. The voltage gain can be set from unity to 26 dB using a single external gain resistor. The AD8351-EP provides a nominal 150 differential output impedance. The excellent distortion performance and low noise characteristics of this device allow a wide range of applications. The AD8351-EP is designed to satisfy the demanding performance requirements of communications transceiver applications. The device can be used as a general-purpose gain block, an ADC driver, and a high speed data interface driver, among other functions. The AD8351-EP can also be used as a single-ended-to-differential amplifier with similar distortion Rev. A products as in the differential configuration. The exceptionally good distortion performance makes the AD8351-EP an ideal solution for 12-bit and 14-bit IF sampling receiver designs. Fabricated in the Analog Devices, Inc., high speed XFCB process, the AD8351-EP has a high bandwidth that provides high frequency performance and low distortion. The quiescent current of the AD8351-EP is 28 mA typically. The AD8351-EP amplifier comes in a 16-lead LFCSP package, and operates over the temperature range of -55C to +105C. Additional application and technical information can be found in the AD8351 datasheet. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com AD8351-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................5 Enhanced Product Features ............................................................ 1 Maximum Power Dissipation ......................................................5 Applications ....................................................................................... 1 ESD Caution...................................................................................5 Functional Block Diagram .............................................................. 1 Pin Configuration and Function Descriptions..............................6 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................7 Revision History ............................................................................... 2 Outline Dimensions ....................................................................... 12 Specifications..................................................................................... 3 Ordering Guide .......................................................................... 12 REVISION HISTORY 9/2016--Rev. 0 to Rev. A Change to Quiescent Current Parameter, Table 1 ........................ 3 Changes to Ordering Guide .......................................................... 12 7/2016--Revision 0: Initial Version Rev. A | Page 2 of 12 Enhanced Product AD8351-EP SPECIFICATIONS VS = 5 V, RL = 150 , RG = 110 (AV = 10 dB), f = 70 MHz, T = 25C, parameters specified differentially, unless otherwise noted. The gain (AV) can be set to any value between 0 dB and 26 dB. Table 1. Parameter DYNAMIC PERFORMANCE -3 dB Bandwidth Bandwidth for 0.1 dB Flatness Bandwidth for 0.2 dB Flatness Gain Accuracy Gain Supply Sensitivity Gain Temperature Sensitivity Slew Rate Settling Time Overdrive Recovery Time Reverse Isolation (S12) INPUT/OUTPUT CHARACTERISTICS Input Common-Mode Voltage Adjustment Range Maximum Output Voltage Swing Output Common-Mode Offset Output Common-Mode Drift Output Differential Offset Voltage Output Differential Offset Drift Input Bias Current Input Resistance 1 Input Capacitance1 Common-Mode Rejection Ratio (CMRR) Output Resistance1 Output Capacitance1 POWER INTERFACE Supply Voltage PWUP Threshold PWUP Input Bias Current Quiescent Current NOISE/DISTORTION 10 MHz Second/Third Harmonic Distortion 2 Third-Order Intermodulation Distortion (IMD) Output Third-Order Intercept Noise Spectral Density (Referred to Input (RTI)) 1 dB Compression Point Test Conditions/Comments Min AV = 6 dB, VOUT 1.0 V p-p AV = 12 dB, VOUT 1.0 V p-p AV = 18 dB, VOUT 1.0 V p-p 0 dB AV 20 dB, VOUT 1.0 V p-p 0 dB AV 20 dB, VOUT 1.0 V p-p Using 1% resistor for RG, 0 dB AV 20 dB VS 5% -55C to +105C RL = 1 k, VOUT = 2 V step RL = 150 , VS = 2 V step 1 V step to 1% VIN = 4 V to 0 V step, VOUT 10 mV 1 dB compressed -55C to +105C -55C to +105C Typ RL = 1 k, VOUT = 2 V p-p RL = 150 , VOUT = 2 V p-p RL = 1 k, f1 = 9.5 MHz, f2 = 10.5 MHz, VOUT = 2 V p-p composite RL = 150 , f1 = 9.5 MHz, f2 = 10.5 MHz, VOUT = 2 V p-p composite f1 = 9.5 MHz, f2 = 10.5 MHz Rev. A | Page 3 of 12 Unit 3000 2200 600 200 400 1 0.08 3.9 13,000 7500 <3 <2 -67 MHz MHz MHz MHz MHz dB dB/V mdB/C V/s V/s ns ns dB 1.2 to 3.8 4.75 40 0.24 20 0.13 15 5 0.8 43 150 0.8 V V p-p mV mV/C mV mV/C A k pF dB pF 3 PWUP at 5 V PWUP at 0 V -55C to +105C Max 5.5 1.3 100 25 28 35 V V A A mA -95/-93 -80/-69 -90 dBc dBc dBc -70 dBc 33 2.65 13.5 dBm nV/Hz dBm AD8351-EP Parameter 70 MHz Second/Third Harmonic Distortion2 Third-Order IMD Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 140 MHz Second/Third Harmonic Distortion2 Third-Order IMD Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 240 MHz Second/Third Harmonic Distortion2 Third-Order IMD Output Third-Order Intercept Noise Spectral Density (RTI) 1 dB Compression Point 1 2 Enhanced Product Test Conditions/Comments Min Typ Max Unit RL = 1 k, VOUT = 2 V p-p RL = 150 , VOUT = 2 V p-p RL = 1 k, f1 = 69.5 MHz, f2 = 70.5 MHz, VOUT = 2 V p-p composite RL = 150 , f1 = 69.5 MHz, f2 = 70.5 MHz, VOUT = 2 V p-p composite f1 = 69.5 MHz, f2 = 70.5 MHz -79/-81 -65/-66 -85 dBc dBc dBc -69 dBc 31 2.70 13.3 dBm nV/Hz dBm RL = 1 k, VOUT = 2 V p-p RL = 150 , VOUT = 2 V p-p RL = 1 k, f1 = 139.5 MHz, f2 = 140.5 MHz, VOUT = 2 V p-p composite RL = 150 , f1 = 139.5 MHz, f2 = 140.5 MHz, VOUT = 2 V p-p composite f1 = 139.5 MHz, f2 = 140.5 MHz -69/-69 -54/-53 -79 dBc dBc dBc -67 dBc 29 2.75 13 dBm nV/Hz dBm RL = 1 k, VOUT = 2 V p-p RL = 150 , VOUT = 2 V p-p RL = 1 k, f1 = 239.5 MHz, f2 = 240.5 MHz, VOUT = 2 V p-p composite RL = 150 , f1 = 239.5 MHz, f2 = 240.5 MHz, VOUT = 2 V p-p composite f1 = 239.5 MHz, f2 = 240.5 MHz -60/-66 -46/-50 -76 dBc dBc dBc -62 dBc 27 2.90 13 dBm nV/Hz dBm Values are specified differentially. See the AD8351 data sheet for information about single-ended to differential operation. Rev. A | Page 4 of 12 Enhanced Product AD8351-EP ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION Rating 6V VPOS 320 mW 79.1C/W 125C -55C to +105C -65C to +150C 300C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. The maximum power that can be safely dissipated by this device is limited by the associated rise in junction temperature. Exceeding a junction temperature of 125C for an extended period can result in device failure. To ensure proper operation of the AD8351-EP, it is necessary to observe the maximum power derating curve (see Figure 2) to guarantee that the maximum junction temperature (125C) is not exceeded under all conditions. 0.350 0.325 0.300 0.275 0.250 0.225 AMBIENT TEMPERATURE (C) Figure 2. Maximum Power Dissipation vs. Temperature ESD CAUTION Rev. A | Page 5 of 12 110 14821-002 90 100 80 70 60 50 40 30 20 0 10 -10 -20 -30 -40 -60 0.200 -50 Parameter Supply Voltage, VPOS PWUP Voltage Internal Power Dissipation JA Maximum Junction Temperature Operating Temperature Range Storage Temperature Range Lead Temperature Range (Soldering, 60 sec) MAXIMUM POWER DISSIPATION (W) Table 2. AD8351-EP Enhanced Product 13 VOCM 14 NC 16 PWUP 15 NC PIN CONFIGURATION AND FUNCTION DESCRIPTIONS RGP1 1 12 VPOS INHI 2 AD8351-EP 11 OPHI INLO 3 TOP VIEW (Not to Scale) 10 OPLO 9 COMM NOTES 1. NC = NO CONNECT. DO NOT CONNECT TO THIS PIN. 2. THE EXPOSED PAD IS INTERNALLY CONNECTED TO GND AND MUST BE SOLDERED TO A LOW IMPEDANCE GROUND PLANE. 14821-003 NC 8 NC 7 NC 6 NC 5 RGP2 4 Figure 3. Pin Configuration Table 3. Pin Function Descriptions Pin No. Mnemonic Description 1 2 3 4 5, 6, 7, 8, 14, 15 9 10 11 12 13 RGP1 INHI INLO RGP2 NC COMM OPLO OPHI VPOS VOCM 16 PWUP EPAD Gain Resistor Input 1. Balanced Differential Input, High. Biased to midsupply, typically ac-coupled. Balanced Differential Input, Low. Biased to midsupply, typically ac-coupled. Gain Resistor Input 2. No Connect. Do not connect to this pin. Device Common. Connect this pin to a low impedance ground. Balanced Differential Output, Low. Biased to VOCM, typically ac-coupled. Balanced Differential Output, High. Biased to VOCM, typically ac-coupled. Positive Supply Voltage. 3 V to 5.5 V. Input/Output Common-Mode Voltage. The voltage applied to this pin sets the common-mode voltage at both the input and output. This pin is typically decoupled to ground with a 0.1 F capacitor. Apply a positive voltage (1.3 V VPWUP VPOS) to activate the device. Exposed Pad. The exposed pad is internally connected to GND and must be soldered to a low impedance ground plane. Rev. A | Page 6 of 12 Enhanced Product AD8351-EP TYPICAL PERFORMANCE CHARACTERISTICS VS = 5 V, T = 25C, unless otherwise noted. 20 30 RG = 20 RG = 10 25 15 RG = 80 GAIN (dB) GAIN (dB) 20 10 RG = 200 5 RG = 50 15 10 RG = 200 0 10 100 1000 10000 FREQUENCY (MHz) 0 1 30 GAIN FLATNESS (dB) 25 GAIN (dB) 20 15 RL = OPEN 5 RL = 150 0 10 100 1k 10k RG () 14821-004 RL = 1k -10 1000 10000 Figure 7. Gain vs. Frequency for a 1 k Differential Load (AV = 10 dB, 18 dB, and 26 dB) 35 -5 100 FREQUENCY (MHz) Figure 4. Gain vs. Frequency for a 150 Differential Load (AV = 6 dB, 12 dB, and 18 dB) 10 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 RL = 150 RL = 1k 1 10 100 1000 FREQUENCY (MHz) 14821-007 1 14821-103 -5 14821-006 5 Figure 8. Gain Flatness vs. Frequency (RL = 150 and 1 k, AV = 10 dB) Figure 5. Gain vs. Gain Resistor, RG (f = 100 MHz, RL = 150 , 1 k, and Open) 10.75 10.50 10.50 10.25 0 -10 10.00 9.75 9.75 9.50 9.50 9.25 ISOLATION (dB) 10.00 GAIN; RL = 150 (dB) 10.25 -30 -40 -50 -60 -70 -40 -20 0 20 40 60 80 100 9.00 120 TEMPERATURE (C) Figure 6. Gain vs. Temperature at 100 MHz (AV = 10 dB) -90 0 100 200 300 400 500 600 700 800 900 FREQUENCY (MHz) Figure 9. Isolation vs. Frequency (AV = 10 dB) Rev. A | Page 7 of 12 1000 14821-008 -80 9.25 -60 14821-005 GAIN; RL = 1k (dB) -20 AD8351-EP Enhanced Product -45 -65 HD2 HD2 -60 -75 HD3 -70 -85 -80 -95 DIFFERENTIAL INPUT -90 -105 -100 -115 250 0 25 50 75 100 125 175 150 200 225 HD3 -20 -40 -50 -30 HD2 -40 -60 -50 -70 -60 -80 HD3 DIFFERENTIAL INPUT -70 -90 HD2 -80 -100 -75 HD2 -80 HD3 -85 -90 -100 0 10 20 30 40 50 60 70 80 90 100 FREQUENCY (MHz) -50 SINGLE-ENDED INPUT -55 HARMONIC DISTORTION (dBc) -30 -70 Figure 13. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 1 k Using Single-Ended Input (AV = 10 dB) HARMONIC DISTORTION; VPOS = 3V (dBc) -10 -60 -65 HD3 -70 -75 -80 HD2 -85 -90 50 75 100 125 150 175 200 225 -110 250 14821-010 25 0 FREQUENCY (MHz) -100 0 10 20 30 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 11. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 150 (AV = 10 dB) Figure 14. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 150 Using Single-Ended Input (AV = 10 dB) 3.00 2.95 2.95 NOISE SPECTRAL DENSITY (nV/Hz) 3.00 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 14821-013 -95 -90 2.90 2.85 2.80 2.75 2.70 2.65 2.60 0 50 100 150 200 FREQUENCY (MHz) 250 2.50 0 50 100 150 200 FREQUENCY (MHz) Figure 15. Noise Spectral Density (RTI) vs. Frequency (RL = 150 , 3 V Supply, AV = 10 dB) Figure 12. Noise Spectral Density (RTI) vs. Frequency (RL = 150 , 5 V Supply, AV = 10 dB) Rev. A | Page 8 of 12 250 14821-014 2.55 2.50 14821-011 NOISE SPECTRAL DENSITY (nV/Hz) HARMONIC DISTORTION; VPOS = 5V (dBc) Figure 10. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 1 k (AV = 10 dB, at 3 V and 5 V Supplies) -20 -65 -95 FREQUENCY (MHz) 0 -60 14821-012 -50 SINGLE-ENDED INPUT -55 HARMONIC DISTORTION (dBc) -55 HD3 HARMONIC DISTORTION; VPOS = 3V (dBc) -40 -50 14821-009 HARMONIC DISTORTION; VPOS = 5V (dBc) -30 Enhanced Product AD8351-EP -70 14 -75 10 THIRD-ORDER IMD (dBc) RL = 150 VPOS = 5V RL = 1k 12 8 RL = 150 VPOS = 3V RL = 1k 6 4 -85 -90 0 25 50 75 100 125 150 175 200 225 250 FREQUENCY (MHz) -95 Figure 16. Output 1 dB Compression (P1dB) vs. Frequency (RL = 150 and 1 k, AV = 10 dB, at 3 V and 5 V Supplies) 0 25 50 75 100 125 150 175 200 225 250 FREQUENCY (MHz) 14821-018 0 Figure 19. Third-Order Intermodulation Distortion (IMD) vs. Frequency for a 2 V p-p Composite Signal into RL = 1 k (AV = 10 dB, at 5 V Supplies) 16 -50 VPOS = 5V 14 -55 THIRD-ORDER IMD (dBc) 12 10 8 VPOS = 3V 6 4 -60 -65 -70 1000 GAIN RESISTOR () OUTPUT 1dB COMPRESSION (dB) 0 25 50 75 100 125 150 175 200 225 250 FREQUENCY (MHz) Figure 20. Third-Order Intermodulation Distortion vs. Frequency for a 2 V p-p Composite Signal into RL = 150 (AV = 10 dB, at 5 V Supplies) -68.0 -68.2 -68.4 -68.6 -68.8 -69.0 -69.2 -69.4 -69.6 -69.8 -70.0 14821-017 13.41 13.40 13.39 13.38 13.37 13.36 13.35 13.34 13.33 13.32 13.31 13.30 Figure 17. Output 1 dB Compression (P1dB) vs. Gain Resistor (RG) (f =100, RL = 150 , AV = 10 dB, at 3 V and 5 V Supplies) -75 THIRD-ORDER INTERMODULATION DISTORTION (dBc) Figure 18. Output Compression Point Distribution (f = 70 MHz, RL = 150 , AV = 10 dB) 14821-020 100 14821-016 0 10 14821-019 2 13.29 OUTPUT 1dB COMPRESSION (dBm) -80 2 14821-015 OUTPUT 1dB COMPRESSION (dBm) 16 Figure 21. Third-Order Intermodulation Distortion Distribution (f = 70 MHz, RL = 150 , AV = 10 dB) Rev. A | Page 9 of 12 AD8351-EP Enhanced Product 0 4000 -25 3000 2500 -50 2000 1500 PHASE (Degrees) IMPEDANCE MAGNITUDE () 3500 3GHz -75 1000 500MHz 3GHz 500 -100 1000 100 14821-024 FREQUENCY (MHz) 500MHz WITH 50 TERMINATIONS WITHOUT TERMINATIONS 14821-021 0 10 10MHz 10MHz Figure 25. Input Reflection Coefficient vs. Frequency (RS = RL = 100 With and Without 50 Terminations) 30 150 25 140 20 130 15 10 120 IMPEDANCE PHASE (Degrees) 160 500MHz 10MHz 5 110 100 10 0 1000 100 3GHz 14821-022 IMPEDANCE MAGNITUDE () Figure 22. Input Impedance vs. Frequency 14821-025 FREQUENCY (MHz) Figure 26. Output Reflection Coefficient vs. Frequency (RS = RL = 100 ) -2 PHASE (Degrees) -4 -6 -8 -10 -12 -14 -16 -18 0 25 50 75 100 125 150 175 200 225 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 1 0 250 FREQUENCY (MHz) 14821-023 0 GROUP DELAY (ps) Figure 23. Output Impedance Magnitude and Phase vs. Frequency Figure 24. Phase and Group Delay (AV = 10 dB, at 5 V Supplies) Rev. A | Page 10 of 12 Enhanced Product AD8351-EP 80 3 VOUT 70 2 RL = 150 1 VOLTAGE (V) VIN 0 40 -1 30 -2 20 1 10 100 1000 FREQUENCY (MHz) -3 Figure 27. Common-Mode Rejection Ratio, CMRR (RS = 100 ) 0 5 10 15 20 25 30 35 40 45 50 TIME (ns) 14821-029 RL = 1k 50 14821-026 CMRR (dB) 60 Figure 30. Overdrive Recovery Using Sinusoidal Input Waveform RL = 150 (AV = 10 dB, at 5 V Supplies) 0.6 1.00 0pF 0.75 0.4 5pF 2pF 0.50 10pF VOLTAGE (V) VOLTAGE (V) 0.2 0 0.25 0 -0.25 -0.2 -0.50 -0.4 17 18 19 20 21 22 23 24 25 TIME (ns) 0 4.5 4 4.0 3 3.5 2 SETTLING (%) 5 3.0 2.5 2.0 -3 -4 0 -5 25 30 35 40 TIME (ns) Figure 29. 2x Output Overdrive Recovery (RL = 150 , AV = 10 dB) 14821-028 0.5 20 2.5 3.0 3.5 4.0 -1 -2 15 2.0 0 1.0 10 1.5 1 1.5 5 1.0 TIME (ns) 5.0 0 0.5 Figure 31. Large Signal Transient Response for a 1 V p-p Output Step (AV = 10 dB, RIP = 25 ) Figure 28. Transient Response Under Capacitive Loading (RL = 150 , CL = 0 pF, 2 pF, 5 pF, 10 pF) OUTPUT (V) -1.00 0 3 6 9 TIME (ns) 12 15 14821-031 16 14821-027 -0.6 15 14821-030 -0.75 Figure 32. 1% Settling Time for a 2 V p-p Step (AV = 10 dB, RL = 150 ) Rev. A | Page 11 of 12 AD8351-EP Enhanced Product OUTLINE DIMENSIONS PIN 1 INDICATOR 0.30 0.25 0.18 0.50 BSC 13 PIN 1 INDICATOR (0.30) 16 1 12 1.80 1.70 SQ 1.60 EXPOSED PAD 9 *0.45 TOP VIEW PKG-004087/PKG-005014 0.80 0.75 0.70 4 5 8 0.40 0.30 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.203 REF SEATING PLANE 0.20 MIN BOTTOM VIEW FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. *COMPLIANT TO JEDEC STANDARDS MO-220-WEED-4 WITH EXCEPTION TO LEAD LENGHT. 10-22-2015-B 3.10 3.00 SQ 2.90 Figure 33. 16-Lead Lead Frame Chip Scale Package [LFCSP] 3 mm x 3 mm Body and 0.75 mm Package Height (CP-16-33) Dimensions shown in millimeters ORDERING GUIDE Model 1 AD8351SCPZ-EP-R7 1 Temperature Range -55C to +105C Package Description 16-Lead Lead Frame Chip Scale Package [LFCSP] Z = RoHS Compliant Part. (c)2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D14821-0-9/16(A) Rev. A | Page 12 of 12 Package Option CP-16-33 Branding Q26