Low Distortion Differential RF/IF Amplifier
Enhanced Product
AD8351-EP
Rev.
A
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FEATURES
−3 dB bandwidth of 2.2 GHz for AV = 12 dB
Single-resistor programmable gain: 0 dB ≤ AV ≤ 26 dB
Differential interface
Low noise input stage: 2.70 nV/√Hz at 70 MHz, AV = 10 dB
Low harmonic distortion
−79 dBc second at 70 MHz
−81 dBc third at 70 MHz
Output third-order intercept (OIP3) of 31 dBm at 70 MHz
Single-supply operation: 3 V to 5.5 V
Low power dissipation: 28 mA at 5 V
Adjustable output common-mode voltage
Fast settling and overdrive recovery
Slew rate of 13,000 V/µs
Power-down capability
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Extended industrial temperature range: −55°C to +105°C
Controlled manufacturing baseline
1 assembly/test site
1 fabrication site
Product change notification
Qualification data available upon request
APPLICATIONS
Differential ADC drivers
Single-ended-to-differential conversion
IF sampling receivers
RF/IF gain blocks
Surface acoustic wave (SAW) filter interfacing
FUNCTIONAL BLOCK DIAGRAM
Figure 1.
GENERAL DESCRIPTION
The AD8351-EP is a low cost differential amplifier useful in RF
and IF applications up to 2.2 GHz. The voltage gain can be set
from unity to 26 dB using a single external gain resistor. The
AD8351-EP provides a nominal 150 Ω differential output
impedance. The excellent distortion performance and low noise
characteristics of this device allow a wide range of applications.
The AD8351-EP is designed to satisfy the demanding
performance requirements of communications transceiver
applications. The device can be used as a general-purpose gain
block, an ADC driver, and a high speed data interface driver,
among other functions. The AD8351-EP can also be used as a
single-ended-to-differential amplifier with similar distortion
products as in the differential configuration. The exceptionally
good distortion performance makes the AD8351-EP an ideal
solution for 12-bit and 14-bit IF sampling receiver designs.
Fabricated in the Analog Devices, Inc., high speed XFCB
process, the AD8351-EP has a high bandwidth that provides
high frequency performance and low distortion. The quiescent
current of the AD8351-EP is 28 mA typically. The AD8351-EP
amplifier comes in a 16-lead LFCSP package, and operates over
the temperature range of −55°C to +105°C.
Additional application and technical information can be found
in the AD8351 datasheet.
VOCM
VPOS
OPHI
OPLO
COMM
PWUP
RGP1
INHI
INLO
RGP2
AD8351-EP
BIAS CE LL
14821-001
AD8351-EP Enhanced Product
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................5
Maximum Power Dissipation ......................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
9/2016—Rev. 0 to Rev. A
Change to Quiescent Current Parameter, Table 1 ........................ 3
Changes to Ordering Guide .......................................................... 12
7/2016—Revision 0: Initial Version
Enhanced Product AD8351-EP
Rev. A | Page 3 of 12
SPECIFICATIONS
VS = 5 V, RL = 150 Ω, RG = 110 Ω (AV = 10 dB), f = 70 MHz, T = 25°C, parameters specified differentially, unless otherwise noted. The
gain (AV) can be set to any value between 0 dB and 26 dB.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Bandwidth AV = 6 dB, VOUT ≤ 1.0 V p-p 3000 MHz
AV = 12 dB, VOUT ≤ 1.0 V p-p 2200 MHz
AV = 18 dB, VOUT ≤ 1.0 V p-p 600 MHz
Bandwidth for 0.1 dB Flatness 0 dB ≤ AV ≤ 20 dB, VOUT ≤ 1.0 V p-p 200 MHz
Bandwidth for 0.2 dB Flatness 0 dB ≤ AV ≤ 20 dB, VOUT ≤ 1.0 V p-p 400 MHz
Gain Accuracy Using 1% resistor for RG, 0 dB ≤ AV ≤ 20 dB ±1 dB
Gain Supply Sensitivity VS ± 5% 0.08 dB/V
Gain Temperature Sensitivity −55°C to +105°C 3.9 mdB/°C
Slew Rate RL = 1 kΩ, VOUT = 2 V step 13,000 V/µs
R
L
= 150 Ω, V
S
= 2 V step
V/µs
Settling Time 1 V step to 1% <3 ns
Overdrive Recovery Time VIN = 4 V to 0 V step, VOUT ≤ ±10 mV <2 ns
Reverse Isolation (S12) −67 dB
INPUT/OUTPUT CHARACTERISTICS
Input Common-Mode Voltage Adjustment Range 1.2 to 3.8 V
Maximum Output Voltage Swing 1 dB compressed 4.75 V p-p
Output Common-Mode Offset 40 mV
Output Common-Mode Drift −55°C to +105°C 0.24 mV/°C
Output Differential Offset Voltage 20 mV
Output Differential Offset Drift −55°C to +105°C 0.13 mV/°C
Input Bias Current ±15 µA
Input Resistance1 5 kΩ
Input Capacitance1 0.8 pF
Common-Mode Rejection Ratio (CMRR)
dB
Output Resistance1 150 Ω
Output Capacitance1 0.8 pF
POWER INTERFACE
Supply Voltage 3 5.5 V
PWUP Threshold 1.3 V
PWUP Input Bias Current PWUP at 5 V 100 µA
PWUP at 0 V 25 µA
Quiescent Current −55°C to +105°C 28 35 mA
NOISE/DISTORTION
10 MHz
Second/Third Harmonic Distortion
2
R
L
= 1 kΩ, V
OUT
= 2 V p-p
dBc
RL = 150 Ω, VOUT = 2 V p-p −80/−69 dBc
Third-Order Intermodulation Distortion (IMD) RL = 1 kΩ, f1 = 9.5 MHz, f2 = 10.5 MHz,
VOUT = 2 V p-p composite
−90 dBc
RL = 150 Ω, f1 = 9.5 MHz, f2 = 10.5 MHz,
VOUT = 2 V p-p composite
−70 dBc
Output Third-Order Intercept f1 = 9.5 MHz, f2 = 10.5 MHz 33 dBm
Noise Spectral Density (Referred to Input (RTI)) 2.65 nV/√Hz
1 dB Compression Point 13.5 dBm
AD8351-EP Enhanced Product
Rev. A | Page 4 of 12
Parameter Test Conditions/Comments Min Typ Max Unit
70 MHz
Second/Third Harmonic Distortion2 RL = 1 kΩ, VOUT = 2 V p-p −79/−81 dBc
RL = 150 Ω, VOUT = 2 V p-p −65/−66 dBc
Third-Order IMD RL = 1 kΩ, f1 = 69.5 MHz, f2 = 70.5 MHz,
VOUT = 2 V p-p composite
−85 dBc
RL = 150 Ω, f1 = 69.5 MHz, f2 = 70.5 MHz,
VOUT = 2 V p-p composite
−69 dBc
Output Third-Order Intercept f1 = 69.5 MHz, f2 = 70.5 MHz 31 dBm
Noise Spectral Density (RTI) 2.70 nV/√Hz
1 dB Compression Point 13.3 dBm
140 MHz
Second/Third Harmonic Distortion2 RL = 1 kΩ, VOUT = 2 V p-p −69/−69 dBc
RL = 150 Ω, VOUT = 2 V p-p −54/−53 dBc
Third-Order IMD RL = 1 kΩ, f1 = 139.5 MHz, f2 = 140.5 MHz,
VOUT = 2 V p-p composite
−79 dBc
RL = 150 Ω, f1 = 139.5 MHz, f2 = 140.5 MHz,
VOUT = 2 V p-p composite
−67 dBc
Output Third-Order Intercept f1 = 139.5 MHz, f2 = 140.5 MHz 29 dBm
Noise Spectral Density (RTI) 2.75 nV/√Hz
1 dB Compression Point 13 dBm
240 MHz
Second/Third Harmonic Distortion2 RL = 1 kΩ, VOUT = 2 V p-p −60/−66 dBc
RL = 150 Ω, VOUT = 2 V p-p −46/−50 dBc
Third-Order IMD RL = 1 kΩ, f1 = 239.5 MHz, f2 = 240.5 MHz,
VOUT = 2 V p-p composite
−76 dBc
RL = 150 Ω, f1 = 239.5 MHz, f2 = 240.5 MHz,
VOUT = 2 V p-p composite
−62 dBc
Output Third-Order Intercept f1 = 239.5 MHz, f2 = 240.5 MHz 27 dBm
Noise Spectral Density (RTI) 2.90 nV/√Hz
1 dB Compression Point 13 dBm
1 Values are specified differentially.
2 See the AD8351 data sheet for information about single-ended to differential operation.
Enhanced Product AD8351-EP
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage, VPOS 6 V
PWUP Voltage VPOS
Internal Power Dissipation 320 mW
θJA 79.1°C/W
Maximum Junction Temperature 125°C
Operating Temperature Range −55°C to +105°C
Storage Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec)
300°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by this device
is limited by the associated rise in junction temperature.
Exceeding a junction temperature of 125°C for an extended
period can result in device failure.
To ensure proper operation of the AD8351-EP, it is necessary to
observe the maximum power derating curve (see Figure 2) to
guarantee that the maximum junction temperature (125°C) is
not exceeded under all conditions.
Figure 2. Maximum Power Dissipation vs. Temperature
ESD CAUTION
0.200
0.225
0.250
0.275
0.300
0.325
0.350
–60
–50
–40
–30
–20
–10
0
10
20
30
40
50
60
70
80
90
100
110
MAXIMUM POWER DISSIPATIO N (W)
AMBI E NT TE M P E RATURE (°C)
14821-002
AD8351-EP Enhanced Product
Rev. A | Page 6 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 3. Pin Configuration
Table 3. Pin Function Descriptions
Pin No. Mnemonic Description
1
RGP1
Gain Resistor Input 1.
2 INHI Balanced Differential Input, High. Biased to midsupply, typically ac-coupled.
3 INLO Balanced Differential Input, Low. Biased to midsupply, typically ac-coupled.
4 RGP2 Gain Resistor Input 2.
5, 6, 7, 8, 14, 15 NC No Connect. Do not connect to this pin.
9 COMM Device Common. Connect this pin to a low impedance ground.
10 OPLO Balanced Differential Output, Low. Biased to VOCM, typically ac-coupled.
11 OPHI Balanced Differential Output, High. Biased to VOCM, typically ac-coupled.
12 VPOS Positive Supply Voltage. 3 V to 5.5 V.
13 VOCM Input/Output Common-Mode Voltage. The voltage applied to this pin sets the common-mode voltage at
both the input and output. This pin is typically decoupled to ground with a 0.1 µF capacitor.
16 PWUP Apply a positive voltage (1.3 V ≤ VPWUP ≤ VPOS) to activate the device.
EPAD Exposed Pad. The exposed pad is internally connected to GND and must be soldered to a low impedance
ground plane.
14821-003
NOTES
1. NC = NO CONNECT. DO NOT CONNE CT TO THIS PIN.
2. THE EX P OSE D PAD IS INTE RNALLY CONNECT E D TO
GND AND M US T BE SOLDE RE D TO A LOW
IM P EDANCE GRO UND P LANE.
12
11
10
1
3
49
2
6
5
7
8
16
15
14
13
RGP1
INHI
INLO
RGP2
VPOS
VOCM
NC
NC
PWUP
OPHI
OPLO
COMM
NC
NC
NC
NC
AD8351-EP
TOP VIEW
(No t t o Scal e)
Enhanced Product AD8351-EP
Rev. A | Page 7 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
VS = 5 V, T = 25°C, unless otherwise noted.
Figure 4. Gain vs. Frequency for a 150 Ω Differential Load
(AV = 6 dB, 12 dB, and 18 dB)
Figure 5. Gain vs. Gain Resistor, RG (f = 100 MHz,
RL = 150 Ω, 1 kΩ, and Open)
Figure 6. Gain vs. Temperature at 100 MHz (AV = 10 dB)
Figure 7. Gain vs. Frequency for a 1 kΩ Differential Load
(AV = 10 dB, 18 dB, and 26 dB)
Figure 8. Gain Flatness vs. Frequency
(RL = 150 Ω and 1 kΩ, AV = 10 dB)
Figure 9. Isolation vs. Frequency (AV = 10 dB)
20
–5
0
5
10
15
1 10 100 1000 10000
GAIN (dB)
FREQUENCY (MHz)
R
G
= 20Ω
R
G
= 80Ω
R
G
= 200Ω
14821-103
35
30
25
20
15
10
5
0
–10
–5
10 100 1k 10k
GAIN (dB)
R
G
(Ω)
R
L
= OPEN
R
L
= 150Ω
R
L
= 1kΩ
14821-004
10.75
9.25
9.50
9.75
10.00
10.25
10.50
10.50
9.00
9.25
9.50
9.75
10.00
10.25
–60 –40 –20 0 20 40 60 80 100 120
GAIN; R
L
= 1kΩ (dB)
GAIN; R
L
= 150Ω (dB)
TEMPERATURE (°C)
14821-005
30
25
20
0
5
10
15
1 10 100 1000 10000
GAIN (dB)
FREQUENCY (MHz)
R
G
= 10Ω
R
G
= 50Ω
R
G
= 200Ω
14821-006
1 10 100 1000
GAIN FLATNESS (dB)
FREQUENCY (MHz)
0.8
0.4
0
–0.4
–0.8
–1.0
0.6
0.2
–0.2
–0.6
0.5
0.1
–0.3
–0.7
–0.9
0.7
0.3
–0.1
–0.5
0.9
1.0
R
L
= 150Ω
R
L
= 1kΩ
14821-007
01000900800700600500400300200100
ISOLATION (dB)
FREQUENCY (MHz)
–90
–80
–70
–60
–50
–40
–30
–20
–10
0
14821-008
AD8351-EP Enhanced Product
Rev. A | Page 8 of 12
Figure 10. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 1 kΩ
(AV = 10 dB, at 3 V and 5 V Supplies)
Figure 11. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 150 Ω
(AV = 10 dB)
Figure 12. Noise Spectral Density (RTI) vs. Frequency
(RL = 150 Ω, 5 V Supply, AV = 10 dB)
Figure 13. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 1 kΩ Using
Single-Ended Input (AV = 10 dB)
Figure 14. Harmonic Distortion vs. Frequency for 2 V p-p into RL = 150 Ω
Using Single-Ended Input (AV = 10 dB)
Figure 15. Noise Spectral Density (RTI) vs. Frequency
(RL = 150 Ω, 3 V Supply, AV = 10 dB)
–30
–40
–50
–60
–70
–80
–90
–100
–45
–55
–65
–75
–85
–95
–105
–115
0250
225200
175
150125100755025
HARMONIC DI STO RTION; VP OS = 5V ( dBc)
HARMONIC DI STO RTION; VP OS = 3V ( dBc)
FREQUENCY (MHz)
DIFFERENTIAL INPUT
HD3
HD3
HD2 HD2
14821-009
0
–90
–80
–70
–60
–50
–40
–30
–20
–10
–20
–110
–100
–90
–80
–70
–60
–50
–40
–30
0250225200175150125100
755025
HARMONIC DI STO RTION; VP OS = 5V ( dBc)
HARMONIC DI STO RTION; VP OS = 3V ( dBc)
FREQUENCY (MHz)
DIFFERENTIAL INPUT
HD3
HD3
HD2
HD2
14821-010
3.00
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
025020015010050
NOISE SPECTRAL DENSITY (nV/√Hz)
FREQUENCY (MHz)
14821-011
–50
–55
–60
–65
–70
–75
–80
–85
–90
–95
–100 010080604020 9070503010
HARMO NIC DIS TORTION (d Bc)
FREQUENCY (MHz)
SINGL E - E NDE D INPUT
HD2
HD3
14821-012
–50
–55
–60
–65
–70
–75
–80
–85
–90
–95
–100 010080604020 9070503010
HARMO NIC DIS TORTION (d Bc)
FREQUENCY (MHz)
SINGL E - E NDE D INPUT
HD2
HD3
14821-013
3.00
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
025020015010050
NOISE SPECTRAL DENSITY (nV/√Hz)
FREQUENCY (MHz)
14821-014
Enhanced Product AD8351-EP
Rev. A | Page 9 of 12
Figure 16. Output 1 dB Compression (P1dB) vs. Frequency
(RL = 150 Ω and 1 kΩ, AV = 10 dB, at 3 V and 5 V Supplies)
Figure 17. Output 1 dB Compression (P1dB) vs. Gain Resistor (RG)
(f =100, RL = 150 Ω, AV = 10 dB, at 3 V and 5 V Supplies)
Figure 18. Output Compression Point Distribution
(f = 70 MHz, RL = 150 Ω, AV = 10 dB)
Figure 19. Third-Order Intermodulation Distortion (IMD) vs. Frequency for a 2
V p-p Composite Signal into RL = 1 kΩ (AV = 10 dB, at 5 V Supplies)
Figure 20. Third-Order Intermodulation Distortion vs. Frequency for a 2 V p-p
Composite Signal into RL = 150 Ω (AV = 10 dB, at 5 V Supplies)
Figure 21. Third-Order Intermodulation Distortion Distribution
(f = 70 MHz, RL = 150 Ω, AV = 10 dB)
16
14
12
10
8
6
4
2
0
0 25020015010050 2251751257525
OUTPUT 1dB COMPRESSION (dBm)
FREQUENCY (MHz)
RL = 150Ω
VPOS = 5V
RL = 1kΩ
RL = 150Ω
VPOS = 3V
RL = 1kΩ
14821-015
16
14
12
10
8
6
4
2
0
10 1000100
OUTPUT 1dB COMPRESSION (dBm)
GAIN RESISTOR (Ω)
VPOS = 5V
VPOS = 3V
14821-016
OUTPUT 1dB COMPRESSION (dB)
13.29
13.31
13.33
13.34
13.30
13.32
13.35
13.36
13.37
13.38
13.39
13.40
13.41
14821-017
–
70
–75
–80
–85
–90
–95
0 25020015010050 2251751257525
THIRD-ORDER IMD (dBc)
FREQUENCY (MHz)
14821-018
–
50
–55
–60
–65
–70
–75
0 25020015010050 2251751257525
THIRD-ORDER IMD (dBc)
FREQUENCY (MHz)
14821-019
THIRD-ORDER INTERMODULATION DISTORTION (dBc)
–68.0 –68.2 –68.4 –68.6 –68.8 –69.0 –69.2 –69.4 –69.6 –70.0–69.8
14821-020
AD8351-EP Enhanced Product
Rev. A | Page 10 of 12
Figure 22. Input Impedance vs. Frequency
Figure 23. Output Impedance Magnitude and Phase vs. Frequency
Figure 24. Phase and Group Delay (AV = 10 dB, at 5 V Supplies)
Figure 25. Input Reflection Coefficient vs. Frequency (RS = RL = 100 Ω With
and Without 50 Ω Terminations)
Figure 26. Output Reflection Coefficient vs. Frequency (RS = RL = 100 Ω)
4000
3500
3000
2500
2000
1500
1000
500
0
0
–100
–75
–50
–25
10 1000100
IMPEDANCE MAGNITUDE (Ω)
PHASE (Degrees)
FREQUENCY (MHz)
14821-021
160
150
140
130
120
110
100
30
0
15
10
5
20
25
10 1000100
IMPEDANCE MAGNITUDE (Ω)
IMPEDANCE PHASE (Degrees)
FREQUENCY (MHz)
14821-022
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
20
0
1
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
0 250125 225100 20075 17550 15025
PHASE (Degrees)
GROUP DELAY (ps)
FREQUENCY (MHz)
14821-023
10MHz
3GHz
3GHz
10MHz
WITHOUT
TERMINATIONS
WITH 50Ω
TERMINATIONS
500MHz 500MHz
14821-024
3GHz
10MHz
500MHz
14821-025
Enhanced Product AD8351-EP
Rev. A | Page 11 of 12
Figure 27. Common-Mode Rejection Ratio, CMRR (RS = 100 Ω)
Figure 28. Transient Response Under Capacitive Loading
(RL = 150 Ω, CL = 0 pF, 2 pF, 5 pF, 10 pF)
Figure 29. 2× Output Overdrive Recovery (RL = 150 Ω, AV = 10 dB)
Figure 30. Overdrive Recovery Using Sinusoidal Input Waveform RL = 150 Ω
(AV = 10 dB, at 5 V Supplies)
Figure 31. Large Signal Transient Response for a 1 V p-p Output Step
(AV = 10 dB, RIP = 25 Ω)
Figure 32. 1% Settling Time for a 2 V p-p Step (AV = 10 dB, RL = 150 Ω)
110 100 1000
CMRR (dB)
FREQUENCY (MHz)
20
80
70
60
50
40
30
R
L
= 150Ω
R
L
= 1kΩ
14821-026
15 25242322212019181716
VOLT AGE (V)
TIME (n s)
–0.6
0.6
0.4
0.2
0
–0.2
–0.4
0pF
5pF
10pF
2pF
14821-027
040353025
2015105
OUTPUT (V)
TIME (n s)
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
4.5
14821-028
05045403530252015105
VOLT AGE (V)
TIME (n s)
3
2
1
0
–1
–2
–3
VIN
VOUT
14821-029
04.03.53.02.52.01.51.00.5
VOLT AGE (V)
TIME (n s)
1.00
–1.00
–0.75
–0.50
–0.25
0
0.25
0.50
0.75
14821-030
01512963
SETTLING (%)
TIME (n s)
5
–5
–4
–3
–2
–1
0
1
2
3
4
14821-031
AD8351-EP Enhanced Product
Rev. A | Page 12 of 12
OUTLINE DIMENSIONS
Figure 33. 16-Lead Lead Frame Chip Scale Package [LFCSP]
3 mm × 3 mm Body and 0.75 mm Package Height
(CP-16-33)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Branding
AD8351SCPZ-EP-R7 −55°C to +105°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16-33 Q26
1 Z = RoHS Compliant Part.
3.10
3.00 SQ
2.90
0.30
0.25
0.18
1.80
1.70 SQ
1.60
1
0.50
BSC
BOTTOM VIEWTOP VIEW
16
5
8
9
1213
4
PIN 1
INDICATOR
(0.30)
*0.45
0.40
0.30
SEATING
PLANE
0.05 M AX
0.02 NO M
0.203 REF
0.20 M IN
COPLANARITY
0.08
PIN 1
INDICATOR
0.80
0.75
0.70
FOR PRO P E R CONNECT ION OF
THE EXPOSED PAD, REFER TO
THE PIN CO NFIGURATION AND
FUNCTION DESCRIPT IONS
SECTION OF THIS DATA SHEET.
10-22-2015-B
PKG-004087/PKG-005014
*COM P LIANT TO JEDEC S TANDARDS MO-220-WEED- 4
WITH EXCEPTION TO LEAD LENGHT.
EXPOSED
PAD
©2016 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D14821-0-9/16(A)