AUIRL3705Z AUIRL3705ZS AUIRL3705ZL AUTOMOTIVE GRADE Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET 55V VDSS RDS(on) typ. 6.5m max. ID (Silicon Limited) 8.0m 86A ID (Package Limited) 75A D D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number Package Type AUIRL3705Z AUIRL3705ZL TO-220 TO-262 AUIRL3705ZS D2-Pak S S D G TO-220AB AUIRL3705Z G D2Pak AUIRL3705ZS G S D TO-262 AUIRL3705ZL G D S Gate Drain Source Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 Orderable Part Number AUIRL3705Z AUIRL3705ZL AUIRL3705ZS AUIRL3705ZSTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) 61 75 IDM PD @TC = 25C Pulsed Drain Current Maximum Power Dissipation 340 130 VGS EAS EAS (tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance Symbol RJC RCS RJA RJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient ( PCB Mount, steady state) Units 86 A W 0.88 16 120 180 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.50 --- 1.14 --- 62 40 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRL3705Z/S/L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 55 --- --- --- --- 1.0 150 --- --- --- --- Typ. --- 0.055 6.5 --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 8.0 VGS = 10V, ID = 52A 11 m VGS = 5.0V, ID = 43A 12 VGS = 4.5V, ID = 30A 3.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 52A 20 VDS = 55V, VGS = 0V A 250 VDS = 55V,VGS = 0V,TJ =125C 200 VGS = 16V nA -200 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 40 12 21 17 240 26 83 60 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Input Capacitance Output Capacitance --- 2880 --- --- 420 --- Crss Coss Coss Coss eff. Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- 220 --- --- 1500 --- --- 330 --- --- 510 --- Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 43A nC VDS = 44V VGS = 5.0V VDD = 28V ID = 43A ns RG= 4.3 VGS = 5.0V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 44V = 1.0MHz VGS = 0V, VDS = 0V to 44V Min. Typ. Max. Units --- --- 75 --- --- 340 --- --- --- --- 16 7.4 1.3 24 11 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 52A,VGS = 0V ns TJ = 25C ,IF = 43A , VDD = 28V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig.11) Limited by TJmax, starting TJ = 25C, L = 0.09mH, RG = 25, IAS = 52A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population 100% tested to this value in production. This is only applied to TO-220AB package. This is applied to D2 Pak, When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ of approximately 90C Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 2015-10-29 AUIRL3705Z/S/L 1000 1000 TOP ID, Drain-to-Source Current (A) 100 BOTTOM 10 1 2.8V 0.1 TOP ID, Drain-to-Source Current (A) VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V 100 BOTTOM 10 2.8V 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 0.01 0.1 1 10 1 100 0.1 1000 10 100 1000 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 120 Gfs, Forward Transconductance (S) 1000 ID , Drain-to-Source Current ) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 10 T J = 25C 1 VDS = 15V 60s PULSE WIDTH 0.1 0 2 4 6 8 10 12 14 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 12V 10V 8.0V 5.0V 4.5V 3.5V 3.0V 2.8V T J = 25C 100 80 60 T J = 175C 40 20 V DS = 8.0V 0 16 0 20 40 60 80 100 120 ID ,Drain-to-Source Current (A) Fig. 4 Typical Forward Transconductance vs. Drain Current 2015-10-29 AUIRL3705Z/S/L 100000 6.0 VGS = 0V, f = 1 MHZ C iss = C gs + Cgd, C ds SHORTED C rss = C gd ID = 52A VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) C oss = Cds + Cgd 10000 Ciss 1000 Coss Crss VDS = 44V VDS = 28V 5.0 VDS = 11V 4.0 3.0 2.0 1.0 0.0 100 1 10 100 0 VDS , Drain-to-Source Voltage (V) 10 20 30 40 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000.00 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175C 100.00 100 T J = 25C 10.00 100sec 10 VGS = 0V 1.00 10msec 1 0.0 0.5 1.0 1.5 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 1msec Tc = 25C Tj = 175C Single Pulse 2.0 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-29 AUIRL3705Z/S/L 2.0 100 Limited By Package 80 ID, Drain Current (A) ID = 43A VGS = 5.0V RDS(on) , Drain-to-Source On Resistance (Normalized) 90 70 60 50 40 30 20 10 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 175 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) TC , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Normalized On-Resistance vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.10 0.05 J 0.02 0.01 R1 R1 J 1 R2 R2 C 1 2 C 2 Ci= iRi Ci= iRi Ri (C/W) i (sec) 0.5413 0.000384 0.5985 0.002778 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-29 AUIRL3705Z/S/L 15V DRIVER D.U.T RG + V - DD IAS 20V tp 500 A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) L VDS ID TOP 5.7A 8.5A BOTTOM 52A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 13a. Gate Charge Test Circuit Id Vds Vgs VGS(th) Gate threshold Voltage (V) 3.0 2.5 2.0 ID = 250A 1.5 1.0 0.5 -75 -50 -25 Vgs(th) Qgs1 Qgs2 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Qgd Qgodr Fig 14. Threshold Voltage vs. Temperature Fig 13b. Gate Charge Waveform 6 2015-10-29 AUIRL3705Z/S/L 100 Duty Cycle = Single Pulse Avalanche Current (A) 0.01 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.05 0.10 1 0.1 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.infineon.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) EAR , Avalanche Energy (mJ) 150 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 52A 125 100 75 50 25 PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 16. Maximum Avalanche Energy vs. Temperature 7 2015-10-29 AUIRL3705Z/S/L Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit Fig 18b. Switching Time Waveforms 8 2015-10-29 AUIRL3705Z/S/L TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information Part Number AUL3705Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 AUIRL3705Z/S/L D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information Part Number AUL3705ZS YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-10-29 AUIRL3705Z/S/L TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Part Number AUL3705ZL YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 2015-10-29 AUIRL3705Z/S/L D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 2015-10-29 AUIRL3705Z/S/L Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level TO-220 Pak N/A D2-Pak MSL1 TO-262 Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Highest passing voltage. Class M4 (+/- 425V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 1125V) AEC-Q101-005 Yes Revision History Date 10/29/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 13 2015-10-29