N E W Efficiency Through Technology P R O D U C T B R I E F 1200V XPTTM IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW IXYS Corporation expands its 1200V XPTTM IGBT product line. With current ratings of up to 220A, TO-247 these new devices are designed to minimize switching losses in high-voltage, hard-switching applications. The high-speed switching capabilities (up to 50 kHz) of these IGBTs allow designers to use smaller and lighter components in their systems. For those IXYS customers who need to lower turn-off losses and/or remove snubbers/clamps from their designs, IGBTs with co-packed ultra-fast TO-264 recovery diodes in Sonic-FRDTM or HiPerFREDTM Technology are available. Manufactured through the state-of-the-art GenX3TM IGBT process and an extreme-light PunchThrough (XPTTM) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use PLUS247 multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, these devices have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 1200V - a necessary ruggedness in snubberless hard-switching applications. The new 1200V XPTTM devices with co-packed anti-parallel Sonic-FRDTM or HiPerFREDTM diodes are ISOPLUS247 optimized to reduce turn-off losses and suppress ringing oscillations, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. Furthermore, due to the soft recovery characteristics of the diodes, the IGBTs can be switched on at very high rates of change in current (di/dt), even in low current and temperature conditions. There are various high-voltage and high-speed applications that the new IGBTs are well-suited for. PLUS264 Among these are power inverters, uninterruptible power supplies, motor drives, switch-mode power supplies, power factor correction circuits, battery chargers, welding machines, and lamp ballasts. TO-220 These 1200V XPTTM IGBTs are available in the following industry standard packages: TO-220, TO-247, ISO TO-247TM, TO-264, SOT-227B, SOT-227B, PLUS247, PLUS264TM and ISOPLUS247TM. SOT-227B FEATURES Optimized for high-speed switching (up to 50kHz) Square RBSOA Positive thermal coefficient of VCE(sat) Anti-parallel ultra-fast diodes Avalanche rated International standard packages ADVANTAGES Hard-switching capabilities High power densities Low gate drive requirements APPLICATIONS Power inverters Uninterruptible Power Supplies (UPS) Motor drives Switch-mode power supplies Power Factor Correction (PFC) circuits Battery chargers Welding machines Lamp ballasts 1200V XPTTM IGBT Summary Table Eoff typ TJ=125C (mJ) RthJC max IGBT (C/W) Configuration Package Style 105(TJ =150 C) 0.7(TJ =150 C) 1.78 Copacked (FRED) ISO TO-247 105(TJ =150 C) 0.7(TJ =150 C) 0.54 Copacked (FRED) TO-247 105(TJ =150 C) 0.7(TJ =150 C) 0.54 Single TO-247 4 105(TJ =150 C) 0.7(TJ =150 C) 0.54 Single TO-220 30 4 88 0.9 0.3 Single TO-247 30 4 88 0.9 0.3 Copacked (FRED) TO-247 66 30 4 88 0.9 0.3 Single TO-220 56 32 (TC=90C) 4 60(TJ=150 C) 1.4 (TJ=150 C) 0.43 Copacked (FRED) ISOPLUS247 1200 96 40 2.9 206 2.05 0.26 Single TO-247 1200 86 40 2.9 206 2.05 0.26 Copacked (FRED) TO-247 IXYH40N120C3 1200 70 40 4 38 0.7 0.26 Single TO-247 IXYH40N120C3D1 1200 64 40 4 38 0.7 0.26 Copacked (FRED) TO-247 IXYN82N120C3 1200 105 46 3.2 95 3.7 0.25 Single SOT-227B IXYN82N120C3H1 1200 105 46 3.2 95 3.7 0.25 Copacked (FRED) SOT-227B IXYH50N120C3 1200 100 50 3.5 60(TJ=150 C) 1.4 0.2 Single TO-247 IXYH50N120C3D1 1200 90 50 4 60(TJ=150 C) 1.4 (TJ=150 C) 0.2 Copacked (FRED) TO-247 IXYR100N120C3 1200 104 58 3.5 125 3.55 0.32 Single ISOPLUS247 IXYN100N120C3H1 1200 134 62 3.5 125 3.55 0.18 Copacked (FRED) SOT-227B IXYB82N120C3H1 1200 160 82 3.2 95 3.7 0.12 Copacked (FRED) PLUS264 IXYH82N120C3 1200 160 82 3.2 95 3.7 0.12 Single TO-247 IXYN100N120C3 1200 152 86 3.5 125 3.55 0.18 Single SOT-227B IXYK100N120C3 1200 188 100 3.5 125 3.55 0.13 Single TO-264 IXYX100N120C3 1200 188 100 3.5 125 3.55 0.13 Single PLUS247 IXYK120N120C3 1200 220 120 3.5 120(TJ=150 C) 5.3 (TJ=150 C) 0.1 Single TO-264 IXYX120N120C3 1200 220 120 3.5 120(TJ=150 C) 5.3 (TJ=150 C) 0.1 Single PLUS247 IC110 TC=110C (A) VCE(sat) max TJ=25C (V) 16 7 4 36 17 4 1200 40 20 4 IXYP20N120C3 1200 40 20 IXYH30N120C3 1200 66 IXYH30N120C3D1 1200 66 IXYP30N120C3 1200 IXYR50N120C3D1 1200 IXYH40N120B3 IXYH40N120B3D1 VCES (V) IC25 TC=25C (A) IXYJ20N120C3D1 1200 IXYH20N120C3D1 1200 IXYH20N120C3 Part Number tfi typ TJ=125C (ns) on Circuits Application Circuits Legend Power Supply Q1 VAC Input Power Factor Circuit CDC LRES MCU Power Supply Power Factor VAC Input CDC Q3 IGBT Gate Driver TIG Welder Output Load Stage Q2 Q4 Q1 CRES Lamp IGBT Gate Driver Figure 2: TIG Welding Inverter Capacitor Q2 Figure 2 shows a general circuit diagram of a high-current TIG welding inverter. This topology is comprised of a rectification stage, power factor correction (PFC) stage, control stage (Power supply, MCU, and IGBT Gate Driver), and power-inverter stage. An AC input (185VAC-265VAC) from the power grid is applied to the rectification stage to be converted into a DC value. This DC value then goes through the PFC circuit where its distorted current is reshaped into a waveform in phase with the input voltage. The DC output of the PFC circuit next enters the power-inverter stage, which is a full-bridge inverter and made up of four IXYB82N120C3H1 XPTTM IGBTs (Q1, Q2, Q3, Q4), to be converted back to an AC voltage that has a higher frequency (typically ranging from 30kHz to 50kHz). This AC voltage signal is applied to the output stage of the TIG welder. MCU Figure 1: Electronic Lamp Ballast Figure 1 illustrates a simplified electronic lamp ballast circuit. It consists of a primary rectifier, power factor correction circuit, control unit (Power supply, MCU, and IGBT Gate Driver), half-bridge inverter and resonant output stage. Two IXYH50N120C3D1 XPTTM IGBTs (Q1 & Q2) are paired to form the half-bridge power inverter stage used to facilitate the ignition and sustain the nominal running AC voltage across the resonant output stage of the lamp. L1 D3 DC-DC Converter D2 Q1 D4 VAC Input C2 C1 MCU IGBT Gate Driver T1 D1 Q2 To Figure 3 illustrates a battery charger circuit that utilizes a half-bridge asymmetrical forward converter topology. Commonly implemented on the primary side of 220VAC offline switch-mode power supplies, it consists of a primary rectifier, a control unit (DC-DC converter, MCU, IGBT Gate Driver), and a half-bridge asymmetrical forward converter. Two XPTTM IGBT devices, IXYH40N120B3D1 (Q1 & Q2), form the forward converter stage of the circuit, providing a reliable and energy-efficient power conversion. Figure 3: Ba ery Charger Circuit October 2012 PB120XPTIGBT 1.0