Data sheet MMIC SPDT Reflective/Non-Reflective Switch, DC - 4GHz Features * Broadband performance * Low insertion loss; 0.5dB typ at 2GHz * Ultra low DC power consumption * Fast switching speed; 3ns typical The P35-4215-000-200 is a high performance Gallium Arsenide single pole double throw broadband RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. The isolated port of the switch can be terminated with either an on-chip 50 load or a shortcircuit. Control is effected by the application of complimentary 0V and -5V levels to the control lines in accordance with the truth table below. Chip form This die is fabricated using Bookham Technology's 0.5 m gate length MESFET process (S20) and is fully protected using Silicon Nitride passivation for excellent performance and reliability. www.bookham.com Thinking RF solutions P35-4215-000-200 Electrical Performance Ambient temperature = 22 3 C , Zo = 50 ohms, Control voltages = 0V/-5V unless otherwise stated Parameter Conditions Input Return Loss 1 Output Return Loss 1 1dB power compression point 2 Switching Speed Third Order Intercept 3 Terminated Units DC - 2GHz Typ 0.5 Max 0.6 Min - Typ 0.6 Max 0.7 dB 2 - 4GHz DC - 2GHz 2 - 4GHz DC - 2GHz 2 - 4GHz DC - 2GHz 2 - 4GHz 0/-5V Control; 50MHz 0/-5V Control; 0.25 - 4GHz 0/-8V Control; 50MHz 0/-8V Control; 0.25 - 4GHz 50% Control to 10%90%RF 500MHz 32 26 15 10 15 10 - 0.9 34 28 25 20 25 20 21 23 25 31 3 46 1.0 - 21 16 15 10 15 10 - 1.4 23 17 25 20 25 20 20 24 25 32 3 46 1.5 - dB dB dB dB dB dB dB dBm dBm dBm dBm ns dBm Insertion Loss Isolation Reflective Min - Notes 1. Return Loss measured in low loss switch state 2. Input power at which insertion loss compresses by 1dB 3. Input power 10dBm/tone Typical Performance at 22 C Insertion Loss Isolation Input Return Loss Output Return Loss Absolute Maximum Ratings Max control voltage Max I/P power Operating temperature Storage temperature www.bookham.com -8V +33 dBm -60 C to +125 C -65 C to +150 C Thinking RF solutions P35-4215-000-200 Chip Outline Electrical Schematic MMICS Bookham Technology plc Caswell Towcester Northamptonshire NN12 8EQ UK * Tel: +44 (0) 1327 356 789 * Fax: +44 (0) 1327 356 698 rfsales@bookham.com Chip size: 0.71 x 0.91mm Bond pad size: 90 m x 90 m minimum Chip thickness: 210 m Important Notice Bookham Technology has a policy of continuous improvement. As a result certain parameters detailed on this flyer may be subject to change without notice. If you are interested in a particular product please request the product specification sheet, available from any RF sales representative. Switching Truth Table A B RF IN-RF1 RF IN-RF 2 0V -5V Low Loss Isolated -5V 0V Isolated Low Loss The P35-4215-0 can be connected such that the isolated switch output is either terminated in 50 or in a reflective short circuit. A reflective configuration is obtained by bonding GND-R1 and GND-R2 to ground. A terminated configuration is obtained by bonding GND-T1 and GND-T2 to ground. In both cases at least two low inductance bondwires should be attached to each pad. Chip Handling, Mounting and Bonding The back of the chip is gold metallized and can be die-attached manually onto gold, eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The maximum allowable chip temperature is 310 C for 2 minutes. Bonds should be made onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire. Bonding should be achieved with the chip face at 225 C to 275 C with a heated thermosonic wedge (approx. 125 C) and a maximum force of 60 grams. Ball bonds may be used but care must be taken to ensure the ball size is compatible with the bonding pads shown. The length of the bond wires should be minimised to reduce parasitic inductance, particularly those to the RF and ground pads. Ordering Information P35-4215-000-200 www.bookham.com 462/SM/00025/200 Issue 1/2 (c) Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc