Data
sheet
www.bookham.com Thinking RF solutions
MMIC SPDT
Reflective/Non-Reflective
Switch, DC - 4GHz
The P35-4215-000-200 is a high performance Gallium
Arsenide single pole double throw broadband RF switch
MMIC. It is suitable for use in broadband communications and
instrumentation applications. The isolated port of the switch
can be terminated with either an on-chip 50 load or a short-
circuit. Control is effected by the application of complimentary
0V and -5V levels to the control lines in accordance with the
truth table below.
This die is fabricated using Bookham Technology's 0.5 µm
gate length MESFET process (S20) and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
Broadband performance
Low insertion loss; 0.5dB typ
at 2GHz
Ultra low DC power consumption
Fast switching speed; 3ns typical
Chip form
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Electrical Performance
Ambient temperature = 22 ±3 °C , Zo = 50 ohms, Control voltages = 0V/-5V unless otherwise stated
P35-4215-000-200
Parameter Conditions Reflective Terminated Units
Min Typ Max Min Typ Max
Insertion Loss DC - 2GHz - 0.5 0.6 - 0.6 0.7 dB
2 - 4GHz - 0.9 1.0 - 1.4 1.5 dB
Isolation DC - 2GHz 32 34 - 21 23 - dB
2 - 4GHz 26 28 - 16 17 - dB
Input Return Loss 1 DC - 2GHz 15 25 - 15 25 - dB
2 - 4GHz 10 20 - 10 20 - dB
Output Return Loss 1DC - 2GHz 15 25 - 15 25 - dB
2 - 4GHz 10 20 - 10 20 - dB
1dB power 0/-5V Control; 50MHz - 21 - - 20 - dBm
compression point 20/-5V Control; 0.25 - 4GHz - 23 - - 24 - dBm
0/-8V Control; 50MHz - 25 - - 25 - dBm
0/-8V Control; 0.25 - 4GHz - 31 - - 32 - dBm
Switching Speed 50% Control to 10%90%RF - 3 - - 3 - ns
Third Order Intercept 3500MHz - 46 - - 46 - dBm
Notes
1. Return Loss measured in low loss switch state
2. Input power at which insertion loss compresses by 1dB
3. Input power 10dBm/tone
Typical Performance at 22° C
Insertion Loss Isolation
Input Return Loss Output Return Loss
Absolute Maximum Ratings
Max control voltage -8V
Max I/P power +33 dBm
Operating temperature -60 °C to +125 °C
Storage temperature -65 °C to +150 °C
Chip Outline Electrical Schematic
Chip size: 0.71 x 0.91mm
Bond pad size: 90 µm x 90 µm minimum
Chip thickness: 210 µm
Switching Truth Table
A B RF IN-RF1 RF IN-RF 2
0V -5V Low Loss Isolated
-5V 0V Isolated Low Loss
The P35-4215-0 can be connected such that the isolated switch output is either
terminated in 50 or in a reflective short circuit. A reflective configuration is obtained
by bonding GND-R1 and GND-R2 to ground. A terminated configuration is obtained
by bonding GND-T1 and GND-T2 to ground. In both cases at least two low
inductance bondwires should be attached to each pad.
Chip Handling, Mounting and Bonding
The back of the chip is gold metallized and can be die-attached manually onto gold,
eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The
maximum allowable chip temperature is 310 °C for 2 minutes. Bonds should be made
onto the exposed gold pads with 17 or 25 microns pure gold, half-hard gold wire.
Bonding should be achieved with the chip face at 225 °C to 275 °C with a heated
thermosonic wedge (approx. 125 °C) and a maximum force of 60 grams. Ball bonds
may be used but care must be taken to ensure the ball size is compatible with the
bonding pads shown. The length of the bond wires should be minimised to reduce
parasitic inductance, particularly those to the RF and ground pads.
Ordering Information
P35-4215-000-200
www.bookham.com 462/SM/00025/200 Issue 1/2
© Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
• Tel: +44 (0) 1327 356 789
• Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4215-000-200