PD - 91514B IRF1310NS/L HEXFET(R) Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.036 G ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1310NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 42 30 140 3.8 160 1.1 20 420 22 16 5.0 -55 to + 175 Units A W W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units --- --- 0.95 40 C/W 5/13/98 IRF1310NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 --- --- 2.0 14 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.11 --- --- --- --- --- --- --- --- --- --- 11 56 45 40 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1900 450 230 V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.036 VGS = 10V, ID = 22A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 22A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 110 ID = 22A 15 nC VDS = 80V 58 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V --- ID = 22A ns --- RG = 3.6 --- RD = 2.9, See Fig. 10 Between lead, --- nH and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 42 showing the A G integral reverse --- --- 140 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS =22A, VGS = 0V --- 180 270 ns TJ = 25C, IF = 22A --- 1.2 1.8 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 1.7mH Uses IRF1310N data and test conditions RG = 25, IAS = 22A. (See Figure 12) ISD 22A, di/dt 180A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. IRF1310NS/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 20us PULSE WIDTH TJ = 25 o C 1 0.1 1 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 o C TJ = 175 o C 10 VDS= 50V 20S PULSE WIDTH 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 100 Fig 2. Typical Output Characteristics 3.0 6.0 1 VDS , Drain-to-Source Voltage (V) 1000 5.0 20us PULSE WIDTH TJ = 175 oC 1 0.1 100 Fig 1. Typical Output Characteristics 1 4.0 4.5V 10 VDS , Drain-to-Source Voltage (V) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 10.0 ID = 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( oC) Fig 4. Normalized On-Resistance Vs. Temperature IRF1310NS/L 3500 VGS , Gate-to-Source Voltage (V) 3000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2500 Ciss 2000 1500 Coss 1000 Crss 500 10 VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 0 1 ID = 22A FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 VDS , Drain-to-Source Voltage (V) 20 40 60 80 100 120 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 10us 100 10 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1.6 10ms TC = 25 o C TJ = 175 o C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area IRF1310NS/L RD 50 V DS VGS 40 D.U.T. I D , Drain Current (A) RG + -V DD 30 10V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.00001 P DM 0.10 t1 0.05 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 IRF1310NS/L 1 5V L VDS D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS A EAS , Single Pulse Avalanche Energy (mJ) 1000 TOP BOTTOM 800 ID 9.0A 16A 22A 600 400 200 0 25 50 75 100 125 150 Starting T J, Junction Temperature ( oC) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 175 IRF1310NS/L Peak Diode Recovery dv/dt Test Circuit Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive D= Period P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRF1310NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 2.5 4 (.100 ) 2X IRF1310NS/L Package Outline TO-262 Outline Part Marking Information TO-262 IRF1310NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 60.00 (2.3 62) MIN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/