DDATA SHEET
Product specification March 2001
DISCRETE SEMICONDUCTORS
BYC8B-600
Rectifier diode
ultrafast, low switching loss
WeEn Semiconductors Product specification
Rectifier diode BYC8B-600
ultrafast, low switching loss
FEATURES SYMBOL QUICK REFERENCE DATA
• Extremely fast switching VR = 600 V
• Low reverse recovery current
• Low thermal resistance VF ≤ 1.85 V
• Reduces switching losses in
associated MOSFET IF(AV) = 8 A
trr = 19 ns (typ)
APPLICATIONS PINNING SOT404
• Active power factor correction PIN DESCRIPTION
• Half-bridge lighting ballasts
• Half-bridge/ full-bridge switched 1 no connection
mode power supplies.
2 cathode1
The BYC8B-600 is supplied in the
SOT404 surface mounting 3 anode
package.
tab cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM Peak repetitive reverse voltage - 600 V
VRWM Crest working reverse voltage - 600 V
VRContinuous reverse voltage Tmb ≤ 110 ˚C - 500 V
IF(AV) Average forward current δ= 0.5; with reapplied VRRM(max);-8A
Tmb ≤ 82 ˚C
IFRM Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); - 16 A
Tmb ≤ 82 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 55 A
current. t = 8.3 ms - 60 A
sinusoidal; Tj = 150˚C prior to surge
with reapplied VRWM(max)
Tstg Storage temperature -40 150 ˚C
TjOperating junction temperature - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 2.2 K/W
mounting base
Rth j-a Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W
ambient
k a
tab 3
tab
1 it is not possible to make connection to pin 2 of the SOT404 package
March 2001 1 Rev 1.500
2
13
D2PAK (SOT404)
WeEn Semiconductors Product specification
Rectifier diode BYC8B-600
ultrafast, low switching loss
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 8 A; Tj = 150˚C - 1.4 1.85 V
IF = 16 A; Tj = 150˚C - 1.7 2.3 V
IF = 8 A; - 2.0 2.9 V
IRReverse current VR = 600 V - 9 150 μA
VR = 500 V; Tj = 100 ˚C - 1.1 3.0 mA
trr Reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs - 30 52 ns
trr Reverse recovery time IF = 8 A; VR = 400 V; - 19 - ns
dIF/dt = 500 A/μs
trr Reverse recovery time IF = 8 A; VR = 400 V; - 32 40 ns
dIF/dt = 500 A/μs; Tj = 100˚C
Irrm Peak reverse recovery current IF = 8 A; VR = 400 V; - 1.5 5.5 A
dIF/dt = 50 A/μs; Tj = 125˚C
Irrm Peak reverse recovery current IF = 8 A; VR = 400 V; - 9.5 12 A
dIF/dt = 500 A/μs; Tj = 125˚C
Vfr Forward recovery voltage IF = 10 A; dIF/dt = 100 A/μs-810V
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction, mode where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
Vin Vo = 400 V d.c.
500 V MOSFET
IL
150 uH
ID
OUTPUT DIODE
typ
Vin Vin = 400 V d.c.
inductive load
IFIR
IL
March 2001 2 Rev 1.500
WeEn Semiconductors Product specification
Rectifier diode BYC8B-600
ultrafast, low switching loss
Fig.3. Maximum forward dissipation as a function of
average forward current; rectangular current
waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse recovery switching losses in
diode, as a function of rate of change of current dIF/dt.
Fig.5. Typical switching losses in transistor due to
reverse recovery of diode, as a function of of change
of current dIF/dt.
Fig.6. Origin of switching losses in transistor due to
diode reverse recovery.
Fig.7. Typical reverse recovery time trr, as a function
of rate of change of current dIF/dt.
Fig.8. Typical peak reverse recovery current, Irrm as a
function of rate of change of current dIF/dt.
024681012
0
5
10
15
20
25 D = 1.0
0.5
0.2
0.1
BYC8-600
Rs = 0.05625 Ohms
Vo = 1.4 V
150
Average forward current, IF(AV) (A)
Forward dissipation, PF (W) Tmb(max) C
139
128
117
106
95
D =
t
p
t
p
T
T
t
I
time
ID Irrm
VD
dIF/dt ID = IL
losses due to
diode reverse recovery
100 1000
0
0.05
0.1
0.15
0.2
0.25
BYC8-600
Rate of change of current, dIF/dt (A/us)
f = 20 kHz
Diode reverse recovery switching losses, Pdsw (W)
IF = 8 A
Tj = 125 C
VR = 400 V
16 A
12 A
100 1000
10
100 BYC8-600
Rate of change of current, dIF/dt (A/us)
Reverse recovery time, trr (ns)
IF = 5 A
16 A
12 A
8 A
Tj = 125 C
VR = 400 V
100 1000
0
1
2
3
4
5
6
7
8
BYC8-600
Rate of change of current, dIF/dt (A/us)
Transistor losses due to diode reverse recovery, Ptsw (W)
IF = 5 A
12 A
16 A
8 A
f = 20 kHz
Tj = 125 C
VR = 400 V
100 1000
1
10
100 BYC8-600
Rate of change of current, dIF/dt (A/us)
Peak reverse recovery current, Irrm (A)
Tj = 125 C
VR = 400 V
IF = 5 A
16 A
March 2001 3 Rev 1.500
WeEn Semiconductors Product specification
Rectifier diode BYC8B-600
ultrafast, low switching loss
Fig.9. Definition of reverse recovery parameters trr, Irrm
Fig.10. Typical forward recovery voltage, Vfr as a
function of rate of change of current dIF/dt.
Fig.11. Definition of forward recovery voltage Vfr
Fig.12. Typical and maximum forward characteristic
IF = f(VF); Tj = 25˚C and 150˚C.
Fig.13. Typical reverse leakage current as a function
of reverse voltage. IR = f(VR); parameter Tj
Fig.14. Maximum thermal impedance Zth j-mb as a
function of pulse width.
Qs100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
01234
0
5
10
15
20 BYC8-600
Forward voltage, VF (V)
Forward current, IF (A)
maxtyp
Tj = 25 C
Tj = 150 C
0 50 100 150 200
0
5
10
15
20 BYC8-600
Tj = 25 C
Rate of change of current, dIF/dt (A/ s)
Peak forward recovery voltage, Vfr (V)
typ
IF = 10 A
0 100 200 300 400 500 600
BYC8-600
1uA
10uA
100uA
1mA
10mA
100mA Reverse leakage current (A)
Reverse voltage (V)
Tj = 125 C
100 C
75 C
50 C
25 C
time
time
VF
Vfr
VF
IF
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYC8
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
March 2001 4 Rev 1.500
WeEn Semiconductors Product specification
Rectifier diode BYC8B-600
ultrafast, low switching loss
March 2001 5 Rev 1.500
MECHANICAL DATA
WeEn Semiconductors
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status [1][2]
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