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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M 6-Pin General Purpose Phototransistor Optocouplers Features Description Minimum Current Transfer Ratio at IF = 10 mA, The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic six-pin dual-in-line package. VCE = 10 V: - 10% for 4N27M and 4N28M - 20% for 4N25M and 4N26M - 100% for 4N35M, 4N36M and 4N37M Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Schematic Package Outlines 1 6 2 5 3 NC 4 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE Figure 2. Package Outlines Figure 1. Schematic (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature(1) 175 C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 2 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified. Symbol Parameter Value Unit -40 to +125 C TOTAL DEVICE TSTG Storage Temperature TOPR Operating Temperature -40 to +100 C Junction Temperature -40 to +125 C 260 for 10 seconds C Total Device Power Dissipation @ TA = 25C 270 mW Derate Above 25C 2.94 mW/C TJ TSOL PD Lead Solder Temperature EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 6 V IF(pk) PD 3 A LED Power Dissipation @ TA = 25C Forward Current - Peak (300 s, 2% Duty Cycle) 120 mW Derate Above 25C 1.41 mW/C DETECTOR VCEO Collector-to-Emitter Voltage 30 V VCBO Collector-to-Base Voltage 70 V VECO Emitter-to-Collector Voltage 7 V Detector Power Dissipation @ TA = 25C 150 mW Derate Above 25C 1.76 mW/C PD (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 3 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Absolute Maximum Ratings TA = 25C unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 1.50 V IR Reverse Leakage Current VR = 6.0 V 0.001 10 A DETECTOR BVCEO Collector-to-Emitter Breakdown Voltage IC = 1.0 mA, IF = 0 30 100 V BVCBO Collector-to-Base Breakdown Voltage IC = 100 A, IF = 0 70 120 V BVECO Emitter-to-Collector Breakdown Voltage IE = 100 A, IF = 0 7 10 V ICEO Collector-to-Emitter Dark Current VCE = 10 V, IF = 0 ICBO Collector-to-Base Dark Current VCB = 10 V CCE Capacitance VCE = 0 V, f = 1 MHz 1 50 nA 20 nA 8 pF Transfer Characteristics Symbol Parameter Test Conditions Device Min. Typ. Max. Unit 4N35M, 4N36M, 4N37M 100 % 4N25M, 4N26M 20 % 4N27M, 4N28M 10 % IF = 10 mA, VCE = 10 V, TA = -55C 4N35M, 4N36M, 4N37M 40 % IF = 10 mA, VCE = 10 V, TA = +100C 4N35M, 4N36M, 4N37M 40 % IC = 2 mA, IF = 50 mA 4N25M, 4N26M, 4N27M, 4N28M 0.5 V IC = 0.5 mA, IF = 10 mA 4N35M, 4N36M, 4N37M 0.3 V IF = 10 mA, VCC = 10 V, RL = 100 (Figure 13) 4N25M, 4N26M, 4N27M, 4N28M 2 IC = 2 mA, VCC = 10 V, RL = 100 (Figure 13) 4N35M, 4N36M, 4N37M 2 IF = 10 mA, VCC = 10 V, RL = 100 (Figure 13) 4N25M, 4N26M, 4N27M, 4N28M 2 IC = 2 mA, VCC = 10 V, RL = 100 (Figure 13) 4N35M, 4N36M, 4N37M 2 DC CHARACTERISTICS IF = 10 mA, VCE = 10 V CTR VCE (SAT) Current Transfer Ratio, Collector-to-Emitter Collector-to-Emitter Saturation Voltage AC CHARACTERISTICS TON TOFF Non-Saturated Turn-on Time Turn-off Time s 10 s s 10 s Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance Min. 4170 VI-O = 0 V, f = 1 MHz VI-O = 500 VDC, TA = 25C (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 Typ. Unit VACRMS 0.2 1011 Max. pF www.fairchildsemi.com 4 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Electrical Characteristics 1.6 1.7 1.4 1.6 1.2 NORMALIZED CTR VF - FORWARD VOLTAGE (V) 1.8 1.5 1.4 TA = -55C 1.3 TA = 25C VCE = 5.0 V TA = 25C Normalized to IF = 10 mA 1.0 0.8 0.6 1.2 0.4 TA = 100C 1.1 0.2 1.0 0.0 1 10 100 0 2 4 6 1.4 NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) IF = 5 mA NORMALIZED CTR 12 14 16 18 20 1.0 1.2 1.0 IF = 10 mA 0.8 IF = 20 mA 0.6 0.4 Normalized to IF = 10 mA TA = 25C -40 -20 0 20 40 60 80 0.9 IF = 20 mA 0.8 IF = 10 mA 0.7 IF = 5 mA 0.6 0.5 0.4 0.3 0.2 VCE = 5.0 V 0.1 0.0 100 10 100 1000 RBE- BASE RESISTANCE (k) TA - AMBIENT TEMPERATURE (C) Figure 6. CTR vs. RBE (Unsaturated) Figure 5. Normalized CTR vs. Ambient Temperature 100 1.0 0.9 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 10 Figure 4. Normalized CTR vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current 0.2 -60 8 IF - FORWARD CURRENT (mA) IF - LED FORWARD CURRENT (mA) VCE= 0.3 V 0.8 IF = 20 mA 0.7 0.6 IF = 10 mA 0.5 0.4 0.3 IF = 5 mA 0.2 TA = 25C 10 1 IF = 2.5 mA 0.1 IF = 20 mA 0.01 0.1 IF = 10 mA IF = 5 mA 0.0 10 100 0.001 0.01 1000 RBE- BASE RESISTANCE (k) 1 10 IC - COLLECTOR CURRENT (mA) Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current Figure 7. CTR vs. RBE (Saturated) (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 0.1 www.fairchildsemi.com 5 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Typical Performance Curves 1000 5.0 NORMALIZED ton - (ton(RBE) / ton(open)) SWITCHING SPEED - (s) IF = 10 mA VCC = 10 V TA = 25C 100 Toff 10 Tf Ton 1 Tr 0.1 VCC = 10 V IC = 2 mA RL = 100 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 1 10 100 10 100 R - LOAD RESISTOR (k) Figure 9. Switching Speed vs. Load Resistor ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) NORMALIZED toff - (toff(RBE) / toff(open)) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 VCC = 10 V IC = 2 mA RL = 100 0.5 0.4 0.3 0.2 100 1000 100000 10000 VCE = 10 V TA = 25C 1000 100 10 1 0.1 0.01 0.001 0.1 10 10000 Figure 10. Normalized ton vs. RBE 1.4 0.6 1000 RBE - BASE RESISTANCE (k) 10000 100000 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) RBE - BASE RESISTANCE (k) Figure 12. Dark Current vs. Ambient Temperature Figure 11. Normalized toff vs. RBE Switching Time Test Circuit and Waveforms TEST CIRCUIT WAVE FORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 13. Switching Time Test Circuit and Waveforms (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 6 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Typical Performance Curves (Continued) 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Reflow Profile 300 260C 280 260 > 245C = 42 s 240 220 200 180 C Time above 183C = 90 s 160 140 120 1.822C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 14. Reflow Profile (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 7 Part Number Package Packing Method 4N25M DIP 6-Pin Tube (50 Units) 4N25SM SMT 6-Pin (Lead Bend) Tube (50 Units) 4N25SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 4N25VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 4N25SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) 4N25SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) 4N25TVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, and 4N37M devices. Marking Information 1 V 3 4N25 2 X YY Q 6 5 4 Figure 15. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., "5" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2005 Fairchild Semiconductor Corporation 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M Rev. 1.3 www.fairchildsemi.com 8 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M -- 6-Pin General Purpose Phototransistor Optocouplers Ordering Information ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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