Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25 C Tc=25 C Storage Temperature Range UNIT V V V A Tstg VALUE 1500 700 5 8 15 34 60 - 65 to +150 Max Operating Junction Temperature Tj 150 C THERMAL RESISTANCE Thermal Resistance Junction - Case Rth (j-c) 2.08 C/W SYMBOL VCES VCEO VEBO IC ICM Ptot ELECTRICAL CHARACTERISTICS (TC=25C unless specified otherwise) . TEST CONDITIONS DESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* IB =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time ts tf IC=4.5A,hFE=2.5,VCC=140V LC=0.9mH, LB=3H * Pulse test: Pulse Duration <300 s , Duty cycle < 1.5%. MIN W C TYP MAX 1.0 UNIT mA V V 300 mA 2.0 V 1.0 V 5.0 V 1.5 V 700 5.0 2.25 7.0 0.5 s s BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package TO-3P (TO-218) Plastic Package A B D C DIM A MIN 15.80 MAX 16.40 B 5.20 3.80 5.70 4.20 D E O 3.30 O 3.60 14.50 15.10 F G 33.25 20.75 36.75 21.25 H 11.50 12.25 K L 1.00 1.30 M 18.75 0.40 21.65 0.60 N 3.15 3.45 C G S E H F L 1 2 3 K P 5.21 5.72 P S 18.75 19.25 All diminsions in mm. M P N 1 2 3 Pin Configuration 1. Base 2. Collector 3. Emitter Packing Detail PACKAGE STANDARD PACK Details TO-3P Net Weight/Qty 100 pcs/polybag 628 gm/100 pcs INNER CARTON BOX OUTER CARTON BOX Size Qty Size Qty Gr Wt 3" x 7.5" x 7.5" 0.3K 17" x 15" x 13.5" 4.8K 42 kgs