DTA144EM / DTA144EE / DTA144EUA / DTA144EKA / DTA144ESA Transistor -100mA / -50V Digital transistors (with built-in resistors) DTA144EM / DTA144EE / DTA144EUA / DTA144EKA / DTA144ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver DTA144EM zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 0.2 1.2 0.32 0.8 1.2 (3) 0.2 (1)(2) 0.22 0.4 0.4 0.13 0.5 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 Abbreviated symbol : 16 DTA144EE 0.7 1.6 0.55 0.3 (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 zStructure PNP epitaxial planar silicon transistor (Resistor built-in type) ROHM : EMT3 Abbreviated symbol : 16 DTA144EUA zPackaging specifications 2.0 0.9 0.2 SMT3 SPT Taping Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 - - - - - - - - - - - DTA144EKA - - - DTA144ESA - - - 2.1 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 Abbreviated symbol : 16 DTA144EKA (1) GND (2) IN (3) OUT 1.1 2.9 0.4 0.8 (3) - - 1.6 2.8 - DTA144EUA (1) (2) 0.1Min. UMT3 Taping (2) zEquivalent circuit (1) 0.3Min. EMT3 Taping 1.25 VMT3 Packaging type DTA144EE 0.7 (3) Package DTA144EM (1) GND (2) IN (3) OUT 1.0 0.3 Type 0.1Min. (1) 0.2 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 (1) GND (2) IN (3) OUT Abbreviated symbol : 16 OUT R1 DTA144ESA 4.0 2.0 3.0 IN 3Min. R2 (15Min.) GND (+) 2.5 GND (+) 0.5 0.45 (1) GND (2) OUT (3) IN 5.0 ROHM : SPT EIAJ : SC-72 R1=R2=47k 0.45 OUT IN (1) (2) (3) Abbreviated symbol : A144ES Rev.A 1/2 DTA144EM / DTA144EE / DTA144EUA / DTA144EKA / DTA144ESA Transistor zAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits DTA144EM DTA144EE DTA144EUA DTA144EKA DTA144ESA Unit Supply voltage VCC -50 V Input voltage VIN -40 to +10 V IO -30 IC(Max.) -100 Output current mA Power dissipation Pd Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 150 200 300 mW zElectrical characteristics (Ta=25C) Typ. Max. VI(off) - - -0.5 VI(on) -3.0 - - V VO(on) - -0.1 -0.3 V II - - -0.18 mA IO(off) - - -0.5 A VCC=-50V, VI=0V GI 68 - - - VO=-5V, IO=-5mA Input resistance R1 32.9 47 61.1 k - Resistance ratio R2/R1 fT 0.8 1 1.2 - - - 250 - MHz Parameter Symbol Min. Input voltage Output voltage Input current Output current DC current gain Transition frequency Unit Conditions VCC=-5V, IO=-100A VO=-0.3V, IO=-2mA IO / II=-10mA / -0.5mA VI=-5V VCE=-10V, IE=5mA, f=100MHz Characteristics of built-in transistor zElectrical characteristic curves OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) -20 -10 -5 Ta=-40C 25C 100C -2 -1 -500m -200m -100m -100 -200 -500 -1m -2m -5m -10m -20m -50m-100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT VOLTAGE : VO(on) (V) -1 -500m -200m -10m VCC=-5V -5m VO=-0.3V -50 -2m -1m -500 1k Ta=100C 25C -40C -200 -100 -50 -20 -10 -5 -2 -1 0 VO=-5V 500 DC CURRENT GAIN : GI -100 200 100 Ta=100C 25C -40C 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 -100 -200 -500 -1m -2m -5m -10m -20m -50m-100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 Ta=100C 25C -40C -100m -50m -20m -10m -5m -2m -1m -100 -200 --500 -1m -2m -5m -10m -20m -50m-100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1