Preliminary data HiPerFAST IGBT with Diode Combi Pack IXGH20N60BU1 IXGH20N60BU1S = loo5 Symbol Test Conditions Maximum Ratings Vers T, =25C to 150C 600 Vv Vier T, =25C to 150C; R,. = 1 MQ 600 Vv Voes Continuous +20 Vv Voem Transient +30 Vv loos T, = 25C 40 A leon T, =90C 20 A cm T, = 25C, 1 ms 80 A SSOA Voe= 15 V, Ty, = 125C, R, = 222 loam = 40 A (RBSOA) Clamped inductive load, L = 100 WH @ 0.8 V.., P. T, = 25C 150 w T, -55 ... +150 C Tw 150 C Tig -55 ... +150 C Maximum Lead and Tab temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s M, Mounting torque, TO-247 AD 1.13/10 Nmilb.in. Weight TO-247 SMD 4 g TO-247 AD 6 g Symbol Test Conditions Characteristic Values (T, = 25C, unless otherwise specified) min. , typ. , max. BV cs I, =250uA,V,. =O0V 600 Vv Vosein) I, = 250 HA, Vee = Veg 2.5 5.5 Vv lees Voge =0.8 Veg T, = 25C 200 WA Vop =OV T, = 125C 8 mA lees Vee = OV, Vee = 420 V +100 nA Voeteat Ie = leeo Vee = 15 V 1.7 2.0 Vv Ves = 600V 40A CE(sat)typ = 1 f V ity) = 100 ns TO-247 SMD* G } C (TAB) E TO-247 AD + C (TAB) G C E G = Gate, C = Collector, E = Emitter, TAB = Collector *Add suffix letter "S" for surface mountable package Features UInternational standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD OHigh frequency IGBT and antiparallel FRED in one package OHigh current handling capability OHiPerFAST HDMOS process CMOS Gate turn-on - drive simplicity Applications OUninterruptible power supplies (UPS) OSwitched-mode and resonant-mode power supplies DAC motor speed control ODC servo and robot drives NODC choppers Advantages DSpace savings (two devices in one package) OHigh power density OSuitable for surface mounting OVery low switching losses for high frequency applications OEasy to mount with 1 screw,TO-247 (insulated mounting screw hole) 1996 IXYS All rights reserved 96534A(12/96)Symbol Test Conditions Characteristic Values (T, = 25C, unless otherwise specified) min. | typ. |max. TO-247 AD Outline 9. I, = bog: Vee = 10 V, 9] 17 S Pulse test, t < 300 ps, duty cycle <2 % 1500 pF Vog = 25 V, Voge = OV, f= 1 MHz 175 pF 40 pF 90 nc Veep = 15 V, Vo, = 0.5 Vig 11 nc 30 nc c cg0 Inductive load, T, = 25C 15 ns 35 ns ls = loco: Vee = 15 V, L = 100 WH, 0.15 mJ Caron) ti E., = - - 1, Veg = 0.8 Vacs: Rg = Roy = 10 2 150 | 200 ne ti E rit ll Al te c b2 Fe e Dim Millimeter Inches Min. Max. Min. Max. A 47 .3 | .185 .209 A, 2.2 2.54] .087 .102 A, 2.2 2.6] .059 .098 b 1.0 14] .040 .055 b, 165 213] .065 .084 b, 2.87 3.12] .113 .123 Cc A 8] .016 .031 D |20.80 21.46] .819 .845 E |15.75 16.26] .610 .640 e .20 5.72 | 0.205 0.225 L 19.81 20.32] .780 .800 L1 4.50 177 @P| 355 365] 140 .144 Q .89 6.40 | 0.232 0.252 R 432 549] 170 .216 Ss 6.15 BSC 242 BSC TO-247 SMD Outline 100} 150 ns oft Note 1 0.7 1.0 mJ tron Inductive load, T, = 125C 15 ns ti ls = lego: Vor = 15 V, L = 100 pH 35 ns on _ _ _ 0.15 mJ taren Voe = 0.8 Vieg, Re = Ry, = 10 2 220 ns t, 140 ns Eon Note 1 1.2 mJ Rinse 0.83 KAW Rincx 0.25 KAW Reverse Diode (FRED) Characteristic Values (T, = 25C, unless otherwise specified) Symbol Test Conditions min. | typ. | max. Vv. I. = logo Woe = OV, 16 V Pulse test, t < 300 us, duty cycled <2 % lem I. = logo: Woe = OV, -di-/dt = 240 A/us 10 15 A _ V, = 360 V T,=125C | 150 ns |. = 1A; -di/dt = 100 Ajus; V,=30V T,= 25C | 35 50 ons Ransc 1 KW Note 1: Switching times may increase for V,, (Clamp) > 0.8 * V.,., higher T, or increased R, Min. Recommended Footprint (Dimensions in inches and mm) el, 0.14 (3.56) | CE 0.125 (3.18) | I 0.675 (17.1) | | | | | | _| | L IXYS reserves the right to change limits, test conditions, and dimensions. eet 4 ot Hf] Oe | sir oe To ede, 4 ZH VIEW A-A re 1, = L ;#P 1. Gate 3. Emitter 2. Collector 4. Collector Dim Millimeter Inches Min. Max. Min. Max. A 483 5.21 190.205 Al 2.29 2.54 | .090 .100 A2 1.91 2.16 | .075 .085 b 1.14 1.40} 045 .055 b1 1.91 2.13 | .075 .084 Cc 0.61 0.80 | .024 .031 D 20.80 21.34] 819 .840 E 15.75 16.13 | 620 635 e 5.45 BSC | .215 BSC L 4.90 5.10 | 193 201 u1 2.70 2.90 | 106 .114 L2 2.10 2.30 | .083 .091 L3 0.00 0.10 | .00 .004 L4 1.90 2.10 | .075 .083 @P 3.55 3.65 | 140 144 Q 5.59 6.20 | .220 .244 R 4.32 483 | 170 .190 $s 6.15 BSC | .242 BSC IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 4,850,072 4,931,844 5,017,508 5,049,961 5,187,117 5,486,715 5,034,796 5,063,307 5,237,481 5,381,025