SEMICONDUCTOR KTA1225D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A I C High Transition Frequency : fT=100MHz(Typ.). J H SYMBOL RATING P UNIT F 1 L F 2 3 Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V 1. BASE Emitter-Base Voltage VEBO -5 V 3. EMITTER Collector Current IC -1.5 A Base Current IB -0.3 A Dissipation Tc=25 Junction Temperature DPAK W 10 Tj 150 Tstg -55150 I A C J K Q Storage Temperature Range 1.3 PC MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 1.10 + 0.2 _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.89 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX D Ta=25 DIM A B C D E F H I J K L M O P Q 2. COLLECTOR B Collector Power M K O MAXIMUM RATING (Ta=25) CHARACTERISTIC E Q B D Complementary to KTC2983D/L P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10+ _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.89 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240 VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V Transition Frequency fT VCE=-10V, IC=-100mA - 100 - MHz VCB=-10V, IE=0, f=1MHz - 30 - pF Collector-Emitter Saturation Voltage Collector Output Capacitance Cob Note : hFE Classification O:70~140, Y:120~240 2000. 2. 10 Revision No : 0 1/1