2000. 2. 10 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTA1225D/L
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
FEATURES
ᴌHigh Transition Frequency : fT=100MHz(Typ.).
ᴌComplementary to KTC2983D/L
MAXIMUM RATING (Ta=25ᴱ)
DPAK
DIM MILLIMETERS
A
B
C
D
F
H
I
J
K
L
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
0.89 0.1
2.00 0.20
0.50 0.10
E
0.91 0.10M
0.90 0.1O
A
C
D
B
E
K
I
J
Q
H
FF
M
O
P
L
123
1. BASE
2. COLLECTOR
3. EMITTER
1.00 0.10P
0.95 MAXQ
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -160 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 A
Base Current IB -0.3 A
Collector Power
Dissipation
Ta=25ᴱPC
1.3
W
Tc=25ᴱ10
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-160V, IE=0 - - -1.0 ỌA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1.0 ỌA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -160 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1mA, IC=0 -5.0 - - V
DC Current Gain hFE(Note) VCE=-5V, IC=-100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -1.5 V
Base-Emitter Voltage VBE VCE=-5V, IC=-500mA - - -1.0 V
Transition Frequency fTVCE=-10V, IC=-100mA - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 30 - pF
Note : hFE Classification O:70~140, Y:120~240
DIM MILLIMETERS
IPAK
D
B
Q
E
H
F F
C
A
P
L
I
J
123
A
B
C
D
E
F
G
H
I
J
L
P
Q
6.60 0.2
6.10 0.2
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
0.89 0.1
0.50 0.1
1.0 0.1
0.90 MAX
G
1. BASE
2. COLLECTOR
3. EMITTER
K 2.0 0.2
K
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
