MOTOROLA SC {XSTRS/R FY Tb DE fe37254 00817 6 fT 96D 81766 OD 6367254 MOTOROLA SC (XSTRS/R F) T-24-al | i - | MAXIMUM RATINGS MPS929 Rating Symbo! }|MPS929| MPS930A | Unit MPS930A , Collector-Emitter Voltage VcEO 45 Vde Collector-Base Voltage Vcso 45 60 Vde CASE 29-04, STYLE 1 Emitter-Base Voltage VEBO 5.0 6.0 Vdc TO-92 (TO-226AA) Collector Current Continuous Ic 100 mAdc Total Device Dissipation @ Ta = 25C Pp 625 mw SS 3 Collector Derate above 25C 5.0 mWwrc Total Device Dissipation @ Tc = 25C Pp 1.5 Watts Derate above 25C 12 mWwPrc 2 B Operating and Storage Junction Ty: Tstg 55 to +150 C 1 ase Temperature Range 2 | 3 1 Emitter THERMAL CHARACTERISTICS AMPLIFIER TRANSISTOR Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rasc 83.3 CW NPN SILICON Thermal Resistance, Junction to Ambient Raja 200 CW Refer to MPS3903 for additional graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Char i Symbol Min Max Unit OFF GHARACTERISTICS Collector-Emitter Breakdown Voltage(1)} VIBRICEO 45 _- Vde (ic = 10 mAde, Ip = 0) Callector-Base Breakdown Voltage VIBRICBO Vde (I = 10 pAde, Ie = 0) MPS929 45 _ MPS930A 60 _ Emitter-Base Breakdown Voltage ViBR}EBO Vde {IE = 10 pAde, Ic = 0) MPS929 5.0 _ MPS930A 6.0 _ . Collector Cutoff Current IcEO _ 2.0 nAdc i {VcE = 5.0 Vde, Ig = 0) Collector Cutoff Current IcBO nAdc (Vog = 45 Vde, Ie = 0) MPS929 _ 10 MPS930A _> 2.0 Collector Cutoff Current ICES nAdc (Vce = 45 Vee, Vpe = 0) MPS929 _ 10 : MPS930A _ 2.0 (VcE = 45 Vde, Vee = 0, Ta = 128C) MPS923 _ 10 pAdc . MPS930A _ 2.0 Emitter Cutoff Current lEBo nAdc (VeB = 5.0 Vde, Ic = 0) MPS929 - 10 MPS930A _ 2.0 ON CHARACTERISTICS DC Current Gain(1) nFE - {Ig = 1.0 wAde, VcE = 5.0 Vde} MPS930A 60 _ (Ig = 10 pAde, Veg = 5.0 Vdc) MPs929 40 120 MPS930A 100 300 (lc = 10 pAde, Vog = 5.0 Vde, Ta = 55C) MPS929 10 _ MPS930A 30 _ (Ic = 500 pAde, VcE = 5.0 Vdc} MPS929 60 - MPS930A 150 ~ (I = 10 mAde, Vcg = 5.0 Vde) MPS929 - 350 MPS930A _ 600 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-173MOTOROLA SC {IXSTRS/R FI 6367254 MOTOROLA SC (XSTRS/R F) MPS929, MPS930A Wb DE Beas7254 o081747 o i 96D 81767 D T292/ ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.} Characteristic Symbol Min Max Unit Coilector-Emitter Saturation Voltage(1) VcE(sat) Vde (Il = 10 mAdc, tg = 0.5 mAdc} MPS929 _ 1.0 MPS930A _ 0.5 Base-Emitter Saturation Voltage(1) VBE(sat) Vde (i = 10 mAdg, Ip = 0.5 mAdc} MPsg929 0.6 1.0 MPS930A 0.7 0.9 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr MHz (Ic = 500 pAde, Voce = 5.0 Vde, f = 30 MHz) MPs929 30 _ MPS930A 45 _ Output Capacitance Cobo pF (Vcg = 5.0 Vdc, IE = 0, f = 1.0 MHz) MPS928 _ 8.0 MPS930A _ 6.0 Input Impedance hip 25 32 Ohms (IE = 1.0 mAdc, Vcp = 5.0 Vdc, f = 1.0 kHz) Voltage Feedback Ratio brp - 600 X 10-6 (IE = 1.0 mAdc, Vcg = 5.0 Vde, f = 1.0 kHz) Smalt-Signal Current Gain hfe _ {lc = 1.0 mAdc, Vee = 5.0 Vde, f = 1.0 kHz) MPS929 60 350 MPS930A 150 600 Output Admittance hob _ 1.0 zmho (lg = 1.0 mAdc, Vcg = 5.0 Vdc, f = 1.0 kHz) Noise Figure NF dB (ic = 10 pAde, Vee = 5.0 Vde, MPs929 _ 4.0 Rg = 10 kohms, f = 10 Hz to 15.7 kHz) MPS930A _ 3.0 (1) Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. TYPICAL CHARACTERISTICS FIGURE 1 DC CURRENT GAIN a 30 bre @Ic =500 nA 05 a w N Z Ty= 1258C = a _ = a 2 3 z 25C $ a Ss 10 a z = a 5 c oa o 0.7 > 2 > e a w = a2 05 10 20 Ic, COLLECTOR CURRENT {mA} 0.3 001002 0.05 0.1 50 30 20 50 100 FIGURE 2 ON VOLTAGES = 25C 0.6 0.4 a2 @tc/lg = o 001002 0.05 @1 02 O8 10 20 Ic, COLLECTOR CURRENT (mA} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-174MOTOROLA SC {XSTRS/R FI Fb DE Pf eae7acy OO81l?ba 1 J = -s - _ - - < ea = =2 6367254 MOTOROLA SC (XSTRS/R F) = BD B1768. OD MPS929, MPS930A TT. 27. Zz / FIGURE 3 COLLECTOR SATURATION REGION FIGURE 4 TEMPERATURE COEFFICIENTS o Ty= * Apples for o 2 a 2 = = eS KR ' a 6yp for VBE Voce, COLLECTOR EMITTER VOLTAGE {VOLTS} Oy, TEMPERATURE COEFFICIENTS (mV/C) 0 -2.4 oo) 002 005 of O2 OS t0 20 50 10 001002 005 01 02 10 2.0 100 Ip, BASE CURRENT (mA) ic, COLLECTOR CURRENT {mA} FIGURE 5 CURRENT-GAIN BANDWIDTH PRODUCT FIGURE 6 CAPACITANCES 3 500 10 = =50 5 17 2606 7.0 S 300 Oo _ & ] 50 = E 200 3 = = 2 5 30 3 z \ 3S 2 > = 100 Gs a E ae 70 fob & a so 10 08 07 10 20 30 60 7.0 10 20 o. 602 OF 10 20 50 0 2 60 100 Vp, HEVERSE VOLTAGE {VOLTS} Ic, COLLECTOR CURRENT {mA} MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-175| | | MOTOROLA SC {IXSTRS/R FT 4b DE ea 7254 o0a81779 & I 367254 MOTOROLA SC gen Bi779 6367254 MOTOROLA SC (XSTRS/R F? Datat MPS3390, MPS3391, MPS3396 MAXIMUM RATINGS thru MPS3398 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vde CASE 29-04, STYLE 1 Collector-Base Voltage VcBo 25 Vde TO-92 (TO-226AA) Emitter-Base Voltage VEBO 5 Vde Collector Current Continuous Ic 100 mAdc Ns 3 Collector Total Device Dissipation @ Ta = 25C Pp 625 mW Derate above 25C 5.0 mWrc 2 Total Device Dissipation @ Tc = 26C Pp 1.5 Watts Base Derate above 25C 12 mwrc 1 Operating and Storage Junction Ty. Tstg | 55 to +150 C 23 1 Emitter Temperature Range GENERAL PURPOSE THERMAL CHARACTERISTICS TRANSISTOR Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RaJA 200 CW NPN SILICON Refer to 2N3903 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) | Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 26 _- Vv (ic = 1,0 mAdce, Ip = 0) Collector Cutoff Current lcBo - 01 BA (Vcp = 18 Vde, tg = 0) Emitter Cutoff Current {EBO - 0.1 BA (Veg = 5.0 Vde, Ic = 0) ON CHARACTERISTICS OC Current Gain hfe _ (VcE = 4.5 Vde, Ic = 2.0 mAdc) MPSs3390 400 800 MPS3391 250 500 MPS3396 90 500 MPS3397 55 500 MPS3398 55 800 SMALL-SIGNAL CHARACTERISTICS Output Capacitance Cobo - 10 pF (Veg = 10V, Ip = 0, f = 1.0 MHz) Smail-Signal Current Gain hfe _ (VceE = 4.6 V, ic = 2.0 mA, f = 1.0 kHz) MPS3380 400 1250 MPS3391 250 800 MPS3396 30 800 MPS3397 55 800 MPS3398 55 1250 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-186MOTOROLA SC {XSTRS/R FI db DE J can7254 ooa1ao? ? { 96D 81807. D "6367254 MOTOROLA SC (XSTRS/R F) i T-24-21 MAXIMUM RATINGS MPS5172 Collector-Emitter Voltage VcEO 25 Vde CASE 29-04, STYLE 1 Collector-Base Voltage VcoBo 26 Vde TO-92 (TO-226AA) Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Ic 100 mAdc Total Device Dissipation @ Ta = 25C Pp 625 mW Derate above 25C 5.0 mWPC Total Device Dissipation @ Te = 25C Pp 1.5 Watts Derate above 25C 12 mWPc Operating and Storage Junction Ty, Tstg | 55 to +150 c Temperature Range 3 Collector 1 Emitter THERMAL CHARACTERISTICS AMPLIFIER TRANSISTOR Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Rec 83.3 CAV Thermal Resistance, Junction to Ambient Raja 200 "CAV NPN SILICON Refer to MPS3903 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.} Characteristic Symbol! Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Y(BRICEO 25 - Vde (ig = 10 mAds, Ig = 0) Collector Cutoff Current IcBo (Vcg = 25 Vde, Ie = 0) . _ _ 100 nAdc (Vcpg = 25 Vde, l_ = 0, Ta = 100C) _ _ 10 pAdc Collector Cutoff Current Ices - - 100 nAde (Voce = 25 Vde, Vag = 0) Emitter Cutoff Current lEBO - _ 100 nAdc (VBE = 5.0 Vdc, i = 0) ON CHARACTERISTICS DC Current Gain(1) hFE 100 - 500 - (I = 10 mAde, Vce = 10 Vde) Collector-Emitter Saturation Voltage VcE(sat) _ - 0,25 Vde (Ic = 10 mAdc, Ig = 1.0 mAdc} ' Base-Emitter Saturation Voltage VBE(sat} _ 0.75 al Vde : (Ip = 10 mAde, Ip = 1.0 mAdc) Base-Emitter On Voltage VBE(on) 0.5 - 4.2 Vde (Ic = 10 mAdc, Veg = 10 Vde) SMALL SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fr -_ 120 _ MHz (Ic = 2.0 mAdc, Voge = 5.0 Vde) Collector-Base Capacitance Cob 1.6 _ 10 OF (Vcp = 0, le = 0, f = 1.0 MHz) Small Signal Current Gain hfe 100 _ 750 _ (Ic = 10 mAdc, Voge = 10 Vde, f = 1.0 kHz) (1) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 2-214