PMEG2010EV,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2002 Jun 24 2003 Aug 20

DISCRETE SEMICONDUCTORS

PMEG2010EV

Low VF MEGA Schottky barrier

diode

M3D74

2003 Aug 20 2

NXP Semiconductors Product data sheet

Low VF MEGA Schottky barrier diode PMEG2010EV

FEATURES

•Forward current: 1 A

•Reverse voltage: 20 V

•Very low forward voltage

•Ultra small SMD package

•Flat leads: excellent coplanarity and improved thermal

behaviour.

APPLICATIONS

•Low voltage rectification

•High efficiency DC/ DC conv ersion

•Switch mode power supply

•Inverse polarity protection

•Low power cons ump tion applications.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier diode w ith an integrated guard ring for

stress protection in a SOT666 ultra small SMD plastic

package.

PINNING

PIN DESCRIPTION

1cathode

2cathode

3anode

4anode

5cathode

6cathode

handbook, halfpage

123

456

1, 2

5, 6 3, 4

MHC310

Fig.1 Simplified outline (SOT666) and symbol.

Marking code: F1.

LIMITING VALUES

In accordance with the A b solute Maxi m um Rating Syst em (IEC 60134)

Note

1. Only valid if pins 3 and 4 are connected in parallel.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −20 V

IFcontinuous forward current −1 A

IFSM non-repetitive peak forward current t = 8.3 ms half sinewave;

JEDEC method; note 1 −8 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

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Low VF MEGA Schottky barrier diode PMEG2010EV

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOT666 standard mounting conditions.

2. Mounted on printed circuit-bo ard, 1 cm2 copper area.

Soldering

The only recommended soldering meth od is reflow soldering.

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C unless otherwise specified.

Notes

1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land.

2. Pulse test: tp = 300 μs; δ = 0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 405 K/W

note 2 215 K/W

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFcontinuous forward v oltage IF = 10 mA 240 270 mV

IF = 100 mA 300 350 mV

IF = 1 000 mA; note 1; see Fig.2 480 550 mV

IRreverse current VR = 5 V; note 2 5 10 μA

VR = 8 V; note 2 7 20 μA

VR = 15 V; note 2; see Fig.3 10 50 μA

Cddiode capacitan c e VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF

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NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2010EV

GRAPHICAL DATA

handbook, halfpage

0.60.20 0.4 VF (V)

(mA)

103

102

10−1

MHC311

(1) (2) (3)

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

250 51015

(μA)

20 VR (V)

105

104

103

102

MHC312

(1)

(2)

(3)

Fig.3 Reverse current as a function of rev erse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

(pF)

10 20

15 VR (V)

MHC313

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tamb = 25 °C.

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NXP Semiconductors Pr oduct data shee t

Low VF MEGA Schottky barrier diode PMEG2010EV

PACKAGE OUTLINE

UNIT bpcDE e1HELpw

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

01-01-04

01-08-27

IEC JEDEC EIAJ

mm 0.27

0.17 0.18

0.08 1.7

1.5 1.3

1.1 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.3

0.1

SOT666

pin 1 index

detail X

0 1 2 mm

scale

0.6

0.5

123

456

Plastic surface mounted package; 6 leads SOT66

wMA

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Low VF MEGA Schottky barrier diode PMEG2010EV

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly iss ued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

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may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

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Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Aug 20 Document orde r number: 9397 750 11684