Zowie Technology Corporation
Dual Switching Diode
MMBD7000 1
2
3
SOT-23
Rating Symbol Value Unit
Characteristic Symbol Min. Max. Unit
Reverse Voltage VR100 Vdc
Peak Forward Current IF200 mAdc
Peak Forward Surge Current IFM( surge ) 500 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD
VF
300
2.4
( IF=1.0 mAdc )
( IF=10 mAdc )
( IF=100 mAdc )
550
670
750
700
820
1100
mW
mW / oC
Thermal Resistance, Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (EACH DIODE)
V(BR) 100 - Vdc
mVdc
OFF CHARACTERISTICS
R
JA
Thermal Resistance, Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Forward Voltage
IR
( VR=50 Vdc )
( VR=100 Vdc, )
( VR=50 Vdc, 125oC )
-
-
-
1.0
3.0
100 uAdcReverse Voltage Leakage Current
Reverse Breakdown Voltage
( IBR=100uAdc )
CJ- 1.5 pF
Diode Capacitance
( VR=0, f=1.0MHZ )
trr - 4.0 nS
Reverse Recovery Time
( IF=IR=10 mAdc, VR=5.0 Vdc, IR(REC)=1.0mAdc, RL=100 )
MMBD7000=M5C
-55 to +150 oCTJ,TSTG
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology CorporationREV. : 0
ANODE CATHODE
CATHODE/ANODE
1
3
2