1
7MBR150VR120-50 IGBT Modules
IGBT MODULE (V series)
1200V / 150A / PIM
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplier
Uninterruptible Power Supply
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specied)
Items Symbols Conditions Maximum
ratings Units
Inverter
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current
Ic Continuous Tc=80°C 150
A
Icp 1ms Tc=80°C 300
-Ic 150
-Ic pulse 1ms 300
Collector power dissipation Pc 1 device 885 W
Brake
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current ICContinuous Tc=80°C 100 A
ICP 1ms Tc=80°C 200
Collector power dissipation PC1 device 520 W
Repetitive peak reverse voltage (Diode) VRRM 1200 V
Converter
Repetitive peak reverse voltage VRRM 1600 V
Average output current IO50Hz/60Hz, sine wave 150 A
Surge current (Non-Repetitive) IFSM 10ms, Tj=150°C
half sine wave
780 A
I2t (Non-Repetitive) I2t 3000 A2s
Junction temperature Tj Inverter, Brake 175
°C
Converter 150
Operating junciton temperature
(under switching conditions) Tjop Inverter, Brake 150
Converter 150
Case temperature Tc 125
Storage temperature Tstg -40 to +125
Isolation voltage
between terminal and copper base (*1)
between thermistor and others (*2)
Viso AC : 1min. 2500 VAC
Screw torque Mounting (*3) - M5 3.5 N m
2
7MBR150VR120-50
2
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items Symbols Conditions Characteristics Units
min. typ. max.
Inverter
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V - - 200 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 150mA 6.0 6.5 7.0 V
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 150A
Tj=25°C - 2.50 2.95
V
Tj=125°C - 2.85 -
Tj=150°C - 2.90 -
VCE (sat)
(chip)
VGE = 15V
IC = 150A
Tj=25°C - 1.85 2.30
Tj=125°C - 2.20 -
Tj=150°C - 2.25 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 12.5 - nF
Turn-on time
ton
VCC = 600V
IC = 150A
VGE = +15 / -15V
RG = 1.8Ω
- 0.39 1.20
µs
tr - 0.09 0.60
tr (i) - 0.03 -
Turn-off time toff - 0.53 1.00
tf - 0.06 0.30
Forward on voltage
VF
(terminal) IF = 150A
Tj=25°C - 2.55 3.00
V
Tj=125°C - 2.85 -
Tj=150°C - 2.80 -
VF
(chip) IF = 150A
Tj=25°C - 1.90 2.35
Tj=125°C - 2.20 -
Tj=150°C - 2.15 -
Reverse recovery time trr IF = 150A - - 0.1 µs
Brake
Zero gate voltage collector current ICES VGE = 0V
VCE = 1200V - - 1.0 mA
Gate-Emitter leakage current IGES VCE = 0V
VGE = +20 / -20V - - 200 nA
Collector-Emitter saturation voltage
VCE (sat)
(terminal)
VGE = 15V
IC = 100A
Tj=25°C - 2.20 2.65
V
Tj=125°C - 2.50 -
Tj=150°C - 2.55 -
VCE (sat)
(chip)
VGE = 15V
IC = 100A
Tj=25°C - 1.75 2.20
Tj=125°C - 2.05 -
Tj=150°C - 2.10 -
Turn-on time ton VCE = 600V
IC = 100A
VGE = +15 / -15V
RG = 1.6Ω
- 0.39 1.20
µs
tr - 0.09 0.60
Turn-off time toff - 0.53 1.00
tf - 0.06 0.30
Reverse current IRRM VR = 1200V - - 1.00 mA
Converter
Forward on voltage VFM
(chip) IF = 150A terminal - 2.05 2.50 V
chip - 1.40 -
Reverse current IRRM VR = 1600V - - 1.0 mA
Thermistor
Resistance RT = 25°C - 5000 - Ω
T = 100°C 465 495 520
B value B T = 25 / 50°C 3305 3375 3450 K
Thermal resistance characteristics
Items Symbols Conditions Characteristics Units
min. typ. max.
Thermal resistance (1device) Rth(j-c)
Inverter IGBT - - 0.17
°C/W
Inverter FWD - - 0.31
Brake IGBT - - 0.29
Converter Diode - - 0.24
Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound - 0.05 -
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
3
3
IGBT Modules
7MBR150VR120-50
Characteristics (Representative)
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Inverter ]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current: IC [A]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current: IC [A]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25
o
C
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
0
50
100
150
200
250
300
0 1 2 3 4 5
VGE=20V
15V
12V
10V
8V
0
50
100
150
200
250
300
0 1 2 3 4 5
15V
12V
10V
8V
VGE=20V
0
50
100
150
200
250
300
012345
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=300A
Ic=150A
0.0
0.1
1.0
10.0
100.0
0 10 20 30
Cies
Coes
Cres
0 200 400 600 800 1000 1200 1400 1600
VGE
VCE
Tj=150°C
4
7MBR150VR120-50
4
IGBT Modules
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 150°C
Switching time vs. Collector current (typ.)
Collector current: IC [A]
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current: IC [A]
Switching loss vs. gate resistance (typ.)
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector-Emitter voltage : VCE [V]
Vcc=600V, Ic=150A, VGE=±15V
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.8Ω, Tj= 125°C
Gate resistance : Rg [Ω]
Switching time : ton, tr, toff, tf [ nsec ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Switching time : ton, tr, toff, tf [ nsec ]
Switching loss : Eon, Eoff, Err [mJ/pulse ]
Collector current: IC [A]
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.8Ω
Switching loss vs. Collector current (typ.)
Gate resistance : Rg [Ω]
[ Inverter ]
Reverse bias safe operating area (max.)
[ Inverter ]
+VGE=15V,-VGE <= 15V, RG >= 1.8Ω ,Tj <= 125°C
Collector current: IC [A]
0
100
200
300
400
0 400 800 1200
RBSOA
(Repetitive pulse)
10
100
1000
10000
0 100 200 300 400
toff
10
100
1000
10000
0 100 200 300 400
toff
10
100
1000
10000
0.1 1.0 10.0 100.0
tr
tf
toff
ton
0
10
20
30
0 100 200 300 400
Eon(125°C)
Eon(150°C)
Eoff(125°C)
Err(125°C)
Err(150°C)
Eoff(150°C)
0
10
20
30
0 1 10 100
Err(150°C)
ton
tr
tf
ton
tr
tf
Err(125°C)
Eoff(150°C)
Eon(125°C)
Eon(150°C)
Eoff(125°C)
5
5
IGBT Modules
7MBR150VR120-50
[ Inverter ]
Vcc=600V, VGE=±15V, Rg=1.8Ω
Reverse recovery characteristics (typ.)
Forward current : IF [A]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
chip
Forward current : IF [A]
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
Thermal resistanse : Rth(j-c) [ °C/W ]
Temperature [°C ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Forward on voltage : VFM [V]
[ Converter ]
Forward current vs. forward on voltage (typ.)
Pulse width : Pw [sec]
[ Thermistor ]
Temperature characteristic (typ.)
Resistance : R [kΩ]
0
50
100
150
200
012345
Tj=125°C
Tj=25°C
10
100
1000
0 100 200 300 400
Irr(150°C)
0
100
200
300
0 1 2 3 4
Tj=125°
C
Tj=25°C
0.01
0.10
1.00
0.001 0.010 0.100 1.000
FWD[Inverter]
IGBT[Brake]
IGBT[Inverter]
Conv. Diode
0.1
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Tj=150°C
Irr(125°C)
trr(150°C)
trr(125°C)
6
7MBR150VR120-50
6
IGBT Modules
[ Brake ]
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage: VCE[V]
VGE=15V / chip
Collector current: IC [A]
Collector-Emitter voltage: VCE[V]
Capacitance vs. Collector-Emitter voltage (typ.)
Capacitance: Cies, Coes, Cres [nF]
Gate charge: Qg [nC]
VGE=0V, f= 1MHz, Tj= 25
o
C
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
Collector-Emitter voltage: VCE[V]
Collector current: IC [A]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector current: IC [A]
Collector - Emitter voltage: VCE [V]
Gate - Emitter voltage: VGE [V]
[ Brake ]
Tj= 25oC / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector - Emitter voltage: VCE [V]
[ Brake ]
Dynamic gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
Collector - Emitter voltage: VCE [200V/div]
Gate - Emitter voltage: VGE [5V/div]
[ Brake ]
0
50
100
150
200
0 1 2 3 4 5
V
GE
=20V
15V
12V
10V
8V
0
50
100
150
200
0 1 2 3 4 5
15V
12V
10V
8V
V
GE
=20V
0
50
100
150
200
012345
Tj=125°C
Tj=25°C
0
2
4
6
8
5 10 15 20 25
Ic=200A
Ic=100A
Ic=50A
0.1
1.0
10.0
100.0
0 10 20 30
Cies
Coes
Cres
0 200 400 600 800 1000
VGE
VCE
Tj=150°C
7
7
IGBT Modules
7MBR150VR120-50
Outline Drawings, mm
shows theoretical dimension.
( ) shows reference dimension.
Section A-A
[ Thermistor ][ Converter ] [ Brake] [ Inverter ]
Equivalent Circuit Schematic
8
7MBR150VR120-50 IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
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