CGH55030F1 - Cree, Inc. - Datasheet.Directory

Subject to change without notice.

www.cree.com/wireless

CGH55030F1 / CGH55030P1

30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX

Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron

mobility transistor (HEMT) designed specically for high efciency, high gain

and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1

ideal for 5.5-5.8 GHz WiMAX and BWA amplier applications. The transistor is

available in both screw-down, ange and solder-down, pill packages. Based

on appropriate external match adjustment, the CGH55030F1/CGH55030P1

is suitable for 4.9 - 5.5 GHz applications as well.

Package Type: 440196 & 440166

PN: CGH55030P1 & CGH55030F1

Rev 3.3 – April 2012

Features

• 300 MHz Instantaneous Bandwidth

• 30 W Peak Power Capability

• 10 dB Small Signal Gain

• 4 W PAVE < 2.0 % EVM

• 25 % Efciency at 4 W Average Power

• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications

• Designed for Multi-carrier DOCSIS Applications

Typical Performance Over 5.5-5.8GHz (TC = 25˚C) of Demonstration Amplier

Parameter 5.50 GHz 5.65 GHz 5.80 GHz Units

Small Signal Gain 9.5 10.0 9.5 dB

EVM at PAVE = 29 dBm 1.1 0.9 0.9 %

EVM at PAVE = 36 dBm 2.2 1.4 1.4 %

Drain Efciency at PAVE = 4 W 23 24 25 %

Input Return Loss 10.8 22 9.3 dB

Note:

Measured in the CGH55030-TB amplier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM

Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,

PAR = 9.8 dB @ 0.01 % Probability on CCDF.

2CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter Symbol Rating Units Conditions

Drain-Source Voltage VDSS 84 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Power Dissipation PDISS 14 Watts

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 7.0 mA 25˚C

Maximum Drain Current1IDMAX 3A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ60 in-oz

Thermal Resistance, Junction to Case3RθJC 4.8 ˚C/W 85˚C

Case Operating Temperature3TC-40, +150 ˚C 30 seconds

Note:

1 Current limit for long term, reliable operation.

2 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp

3 Measured for the CGH55030F1 at PDISS = 14 W

Electrical Characteristics (TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(th) -3.8 -3.0 –2.3 VDC VDS = 10 V, ID = 7.2 mA

Gate Quiescent Voltage VGS(Q) –-2.7 –VDC VDS = 28 V, ID = 250 mA

Saturated Drain Current IDS 5.8 7.0 –A VDS = 6.0 V, VGS = 2 V

Drain-Source Breakdown Voltage VBR 120 – – VDC VGS = -8 V, ID = 7.2 mA

RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)

Small Signal Gain GSS 8.5 10.0 –dB VDD = 28 V, IDQ = 250 mA

Drain Efciency4η19 24 –% VDD = 28 V, IDQ = 250 mA, PAVE = 4 W

Error Vector Magnitude EVM –2.0 2.5 % VDD = 28 V, IDQ = 250 mA, PAVE = 4 W

Output Mismatch Stress VSWR – – 10 : 1 YNo damage at all phase angles,

VDD = 28 V, IDQ = 250 mA, PAVE = 4 W

Dynamic Characteristics

Input Capacitance CGS –9.0 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Output Capacitance CDS –2.6 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance CGD –0.4 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz

Notes:

1 Measured on wafer prior to packaging.

2 Measured in the CGH55030-TB test xture.

3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type

RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.

4 Drain Efciency = POUT / PDC.

3CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical WiMAX Performance

Small Signal S-Parameters vs Frequency of

CGH55030F1 and CGH55030P1 in the CGH55030-TB

VDD = 28 V, IDQ = 250 mA

Typical EVM and Efciency versus Frequency of

CGH55030F1 and CGH55030P1 in the CGH55030-TB

VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB, PAVE = 5 W

Note:

Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM

Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding

Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.

5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 6.1

Frequency (GHz)

S21 (dB)

-25

-20

-15

-10

-5

S11 (dB)

S21

S11

0.0

0.5

1.0

1.5

2.0

2.5

3.0

5.45 5.50 5.55 5.60 5.65 5.70 5.75 5.80 5.85

Frequency (GHz)

EVM (%)

Drain Efficiency (%)

30 W EVM 30 W Drain Efficiency

4CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Drain Efficiency (%)

Gain (dB)

5.50 GHz (Gain)

15 20 25 30 35 40

Drain Efficiency (%)

Gain (dB)

Output Power (dBm)

5.50 GHz (Gain)

5.65 GHz (Gain)

5.80 GHz (Gain)

5.50 GHz (Efficiency)

5.65 GHz (Efficiency)

5.80 GHz (Efficiency)

8.0

10.0

12.0

14.0

Drain Efficiency (%)

EVM (%)

5.50 GHz (EVM)

5.65 GHz (EVM)

5.80 GHz (EVM)

5.50 GHz (Efficiency)

5.65 GHz (Efficiency)

5.80 GHz (Efficiency)

0.0

2.0

4.0

6.0

15 20 25 30 35 40

Drain Efficiency (%)

EVM (%)

Output Power (dBm)

Typical WiMAX Performance

Drain Efciency and Gain vs Output Power of

CGH55030F1 and CGH55030P1 in CGH55030-TB

VDD = 28 V, IDQ = 250 mA, 802.16-2004 OFDM, PAR=9.8 dB

Note:

Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM

Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding

Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.

Typical EVM and Drain Efciency vs Output Power of

CGH55030F1 and CGH55030P1 in CGH55030-TB at

5.50GHz, 5.65 GHz, 5.80GHz, 802.16-2004 OFDM, PAR=9.8 dB

Note:

Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM

Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding

Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.

5CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical DOCSIS Performance

Modulation Error Ratio vs Output Power of

CGH55030F1 and CGH55030P1 in Broadband Amplier Circuit

Note:

MER is the metric of choice for cable systems and can be related to EVM by the following

equation: EVM(%) = 100 x 10 ^ -((MERdB + MTAdB)/20). MTA is the “maximum-to-average

constellation power ratio” which varies with the modulation type: MTA = 0 for BPSK and QPSK;

2.55 for 16QAM and 8QAM-DS; 3.68 for 64QAM and 32QAM-DS; 4.23 for 256QAM and 128QAM-DS

EVM vs Output Power of CGH55030F1 and CGH55030P1 in Broadband Amplier Circuit

Note:

Under DOCSIS, 6.0 MHz Channel BW, 64 QAM, PN23, Filter Alpha 0.18, PAR = 6.7dB.

CGH55030 EVM vs Power Output - DOCSIS

15 20 25 30 35 40

Power Output (dBm)

Modulation Error Ratio (dB)

5.50 GHz

5.65 GHz

5.80 GHz

CGH55030 EVM vs Power Output - DOCSIS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

15 20 25 30 35 40

Power Output (dBm)

EVM (%)

5.50 GHz

5.65 GHz

5.80 GHz

6CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical Performance

Simulated Maximum Available Gain and K Factor of the CGH55030F1/P1

VDD = 28 V, IDQ = 250 mA

Typical Noise Performance

Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH55030F1/P1

VDD = 28 V, IDQ = 250 mA

Minimum Noise Figure (dB)

Noise Resistance (Ohms)

MAG (dB)

K Factor

7CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Source and Load Impedances

Frequency (MHz) Z Source Z Load

5500 8.0 – j12.4 14.1 – j12.6

5650 8.7 - j13.1 14.7 – j11.7

5800 8.4 - j14.0 15.4 – j11.0

Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.

Note 2. Impedances are extracted from the CGH55030-TB demonstration

amplier and are not source and load pull data derived from the transistor.

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C

Z Source Z Load

8CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

CGH55030-TB Demonstration Amplier Circuit Bill of Materials

Designator Description Qty

R1 RES, 1/16W, 0603, 1%, 562 OHMS 1

R2 RES, 1/16W, 0603, 1%, 22.6 OHMS 1

C2 CAP, 0.3pF, +/-0.05pF, 0402, ATC600L 1

C16 CAP, 33 UF, 20%, G CASE 1

C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1

C8 CAP 10UF 16V TANTALUM 1

C9 CAP, 0.4pF, +/-0.05pF, 0603, ATC600S 1

C1 CAP, 1.2pF, +/-0.1pF, 0603, ATC600S 1

C6,C13 CAP,200 PF,0603 PKG, 100 V 2

C4,C11 CAP, 10.0pF,+/-5%, 0603, ATC600S 2

C5,C12 CAP, 39pF, +/-5%, 0603, ATC600S 2

C7,C14 CAP, 330000PF, 0805, 100V, TEMP STABILIZ 2

J3,J4 CONN, SMA, PANEL MOUNT JACK, FLANGE 2

J1 HEADER RT>PLZ .1CEN LK 5POS 1

- PCB, RO4350B, Er = 3.48, h = 20 mil 1

-CGH55030 1

CGH55030-TB Demonstration Amplier Circuit

9CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

CGH55030-TB Demonstration Amplier Circuit Schematic

CGH55030-TB Demonstration Amplier Circuit Outline

(CGH55030F)

10 CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Typical Package S-Parameters for CGH55030F1 and CGH55030P1

(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0.917 -157.22 12.62 91.45 0.018 7.56 0.458 -158.97

600 MHz 0.916 -161.92 10.57 87.33 0.018 4.70 0.465 -160.93

700 MHz 0.916 -165.46 9.07 83.78 0.018 2.41 0.472 -162.19

800 MHz 0.916 -168.28 7.94 80.58 0.018 0.51 0.478 -163.04

900 MHz 0.916 -170.61 7.05 77.64 0.017 -1.12 0.485 -163.64

1.0 GHz 0.916 -172.60 6.33 74.88 0.017 -2.55 0.493 -164.09

1.2 GHz 0.917 -175.88 5.24 69.73 0.017 -4.94 0.508 -164.77

1.4 GHz 0.918 -178.57 4.46 64.94 0.017 -6.84 0.525 -165.36

1.6 GHz 0.919 179.09 3.87 60.41 0.016 -8.31 0.542 -165.99

1.8 GHz 0.921 176.98 3.40 56.07 0.016 -9.39 0.559 -166.73

2.0 GHz 0.922 175.03 3.03 51.90 0.015 -10.06 0.577 -167.59

2.2 GHz 0.924 173.17 2.73 47.87 0.014 -10.31 0.594 -168.57

2.4 GHz 0.925 171.39 2.47 43.97 0.014 -10.12 0.610 -169.67

2.6 GHz 0.926 169.65 2.26 40.19 0.013 -9.46 0.626 -170.88

2.8 GHz 0.928 167.93 2.08 36.52 0.013 -8.31 0.642 -172.17

3.0 GHz 0.929 166.24 1.92 32.94 0.013 -6.65 0.656 -173.55

3.2 GHz 0.930 164.54 1.78 29.45 0.012 -4.49 0.670 -175.00

3.4 GHz 0.931 162.85 1.66 26.05 0.012 -1.85 0.683 -176.50

3.6 GHz 0.932 161.14 1.55 22.72 0.012 1.19 0.695 -178.06

3.8 GHz 0.933 159.42 1.46 19.46 0.012 4.55 0.706 -179.66

4.0 GHz 0.933 157.68 1.38 16.27 0.012 8.08 0.716 178.70

4.1 GHz 0.934 156.80 1.34 14.69 0.012 9.87 0.721 177.86

4.2 GHz 0.934 155.91 1.31 13.12 0.012 11.64 0.726 177.02

4.3 GHz 0.934 155.01 1.27 11.57 0.012 13.38 0.730 176.17

4.4 GHz 0.934 154.11 1.24 10.03 0.013 15.08 0.735 175.30

4.5 GHz 0.935 153.20 1.21 8.49 0.013 16.71 0.739 174.44

4.6 GHz 0.935 152.28 1.18 6.97 0.013 18.26 0.743 173.56

4.7 GHz 0.935 151.35 1.16 5.46 0.013 19.72 0.746 172.67

4.8 GHz 0.935 150.41 1.13 3.95 0.014 21.09 0.750 171.78

4.9 GHz 0.935 149.46 1.11 2.46 0.014 22.35 0.753 170.88

5.0 GHz 0.935 148.49 1.08 0.96 0.015 23.50 0.756 169.97

5.1 GHz 0.935 147.52 1.06 -0.52 0.015 24.55 0.760 169.05

5.2 GHz 0.935 146.53 1.04 -2.00 0.016 25.48 0.762 168.12

5.3 GHz 0.935 145.53 1.02 -3.48 0.016 26.30 0.765 167.18

5.4 GHz 0.935 144.52 1.00 -4.96 0.017 27.02 0.768 166.24

5.5 GHz 0.935 143.49 0.99 -6.43 0.018 27.62 0.770 165.28

5.6 GHz 0.935 142.45 0.97 -7.90 0.018 28.12 0.773 164.32

5.7 GHz 0.934 141.39 0.95 -9.37 0.019 28.53 0.775 163.35

5.8 GHz 0.934 140.31 0.94 -10.84 0.020 28.83 0.777 162.36

5.9 GHz 0.934 139.22 0.93 -12.32 0.020 29.05 0.779 161.37

6.0 GHz 0.934 138.12 0.91 -13.79 0.021 29.18 0.781 160.36

Download this s-parameter le in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp

11 CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Product Dimensions CGH55030F1 (Package Type — 440166)

Product Dimensions CGH55030P1 (Package Type — 440196)

12 CGH55030F1_P1 Rev 3.3

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/wireless

the Cree logo are registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent

or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products

for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are

provided for information purposes only. These values can and do vary in different applications and actual performance

can vary over time. All operating parameters should be validated by customer’s technical experts for each application.

Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear

facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/wireless

Sarah Miller

Marketing & Export

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639