December 2011 Doc ID 13288 Rev 4 1/20
20
STB95N4F3, STD95N4F3
STP95N4F3
N-channel 40 V, 5.0 mΩ, 80 A STripFET™ III
Power MOSFET in D²PAK, DPAK, TO-220
Features
Standard threshold drive
100% avalanche tested
Applications
Switching applications
Automotive
Description
These devices are N-channel enhancement mode
Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Figure 1. Internal schematic diagram
Order codes VDSS
RDS(on)
max. IDPw
STB95N4F3
40 V < 5.8 m Ω80 A 110 WSTD95N4F3
STP95N4F3 < 6.2 mΩ
DPAK TO-220
D²PAK
1
3
TA B
1
3
TAB
12
3
TA B
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Table 1. Device summary
Order codes Marking Package Packaging
STB95N4F3 95N4F3 D²PAK Tape and reel
STD95N4F3 95N4F3 DPAK
STP95N4F3 95N4F3 TO-220 Tube
www.st.com
Contents STB95N4F3, STD95N4F3, STP95N4F3
2/20 Doc ID 13288 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STB95N4F3, STD95N4F3, STP95N4F3 Electrical ratings
Doc ID 13288 Rev 4 3/20
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 40 V
VGS Gate-source voltage ± 20 V
ID (1)
1. Current limited by package.
Drain current (continuous) at TC = 25 °C 80 A
ID Drain current (continuous) at TC = 100 °C 65 A
IDM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 320 A
PTOT Total dissipation at TC = 25 °C 110 W
Derating factor 0.73 W/°C
dv/dt (3)
3. ISD 80 A, di/dt 400A/µs, VDS V(BR)DSS, Tj Tjmax.
Peak diode recovery voltage slope 8 V/ns
EAS (4)
4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V.
Single pulse avalanche energy 400 mJ
Tj
Tstg
Operating junction temperature
Storage temperature -55 to 175 °C
Table 3. Thermal resistance
Symbol Parameter
Value
Unit
D²PAK DPAK TO-220
Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Rthj-pcb (1)
1. When mounted on 1inch² FR-4 2Oz Cu board.
Thermal resistance junction-ambient max 30 50 °C/W
TlMaximum lead temperature for soldering purpose 300 °C
Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3
4/20 Doc ID 13288 Rev 4
2 Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 250 µA, VGS= 0 40 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 40 V,
VDS = 40 V,Tc = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V ±200 nA
VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 40 A 5.0 5.8 mΩ
VGS= 10 V, ID= 40 A for TO-220 5.4 6.2 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS =25 V, f=1 MHz, VGS=0 -
2200
580
40
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=20 V, ID = 80 A
VGS =10 V
(see Figure 14)
-
40
11
8
54 nC
nC
nC
STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics
Doc ID 13288 Rev 4 5/20
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
-15
50 -ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
-40
15 -ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed) -80
320
A
A
VSD (2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD=80 A, VGS=0 - 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=80 A,
di/dt = 100 A/µs,
VDD= 30 V, Tj=150 °C
(see Figure 15)
-
45
60
2.8
ns
nC
A
Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3
6/20 Doc ID 13288 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature
R
DS(on)
6.0
5.5
5.0
4.5040 I
D
(A)
(mΩ)
20 60
6.5 I
D
=40A
V
GS
=10V
TO-220
DPAK, D²PAK
80
HV29000
STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics
Doc ID 13288 Rev 4 7/20
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Test circuits STB95N4F3, STD95N4F3, STP95N4F3
8/20 Doc ID 13288 Rev 4
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
BB
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.31000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data
Doc ID 13288 Rev 4 9/20
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3
10/20 Doc ID 13288 Rev 4
Table 8. D²PAK (TO-263) mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data
Doc ID 13288 Rev 4 11/20
Figure 19. D²PAK (TO-263) drawing
Figure 20. D²PAK footprint(a)
a. All dimension are in millimeters
0079457_S
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3
12/20 Doc ID 13288 Rev 4
Table 9. DPAK (TO-252) mechanical data
Dim.
mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1 1.50
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data
Doc ID 13288 Rev 4 13/20
Figure 21. DPAK (TO-252) drawing
Figure 22. DPAK footprint(b)
b. All dimension are in millimeters
0068772_H
6.7
1.6
1.6
2.3
2.3
6.7 1.83
AM08850v1
Package mechanical data STB95N4F3, STD95N4F3, STP95N4F3
14/20 Doc ID 13288 Rev 4
Table 10. TO-220 type A mechanical data
Dim.
mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
P3.75 3.85
Q2.65 2.95
STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data
Doc ID 13288 Rev 4 15/20
Figure 23. TO-220 type A drawing
0015988_typeA_Rev_S
Packaging mechanical data STB95N4F3, STD95N4F3, STP95N4F3
16/20 Doc ID 13288 Rev 4
5 Packaging mechanical data
Table 11. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3
STB95N4F3, STD95N4F3, STP95N4F3 Packaging mechanical data
Doc ID 13288 Rev 4 17/20
Table 12. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Packaging mechanical data STB95N4F3, STD95N4F3, STP95N4F3
18/20 Doc ID 13288 Rev 4
Figure 24. Tape
Figure 25. Reel
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top cover
tape
AM08852v2
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
STB95N4F3, STD95N4F3, STP95N4F3 Revision history
Doc ID 13288 Rev 4 19/20
6 Revision history
Table 13. Dcument revision history
Date Revision Changes
22-Feb-2007 1 First release
15-May-2007 2 Changes on applications
10-Sep-2009 3 Removed package, mechanical data: IPAK
13-Dec-2011 4
New package and mechanical data have been added:
Table 8: D²PAK (TO-263) mechanical data,
Figure 19: D²PAK (TO-263) drawing, Figure 20: D²PAK footprint
Section 5: Packaging mechanical data has been updated:
Table 11: D²PAK (TO-263) tape and reel mechanical data,
Figure 24: Tape, Figure 25: Reel.
Minor text changes.
STB95N4F3, STD95N4F3, STP95N4F3
20/20 Doc ID 13288 Rev 4
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