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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. RFD14N05L, RFD14N05LSM Data Sheet N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 m These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V-5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870. Ordering Information PART NUMBER PACKAGE October 2013 Features * 14A, 50V * rDS(ON) = 0.100 * Temperature Compensating PSPICE(R) Model * Can be Driven Directly from CMOS, NMOS, and TTL Circuits * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol BRAND D RFD14N05L TO-251AA 14N05L RFD14N05LSM TO-252AA 14N05L RFD14N05LSM9A TO-252AA 14N05L G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD14N05LSM9A. S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) (c)2004 Fairchild Semiconductor Corporation DRAIN (FLANGE) GATE SOURCE RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD14N05L, RFD14N05LSM, RFD14N05LSM9A 50 50 10 14 Refer to Peak Current Curve Refer to UIS Curve 48 0.32 -55 to 175 Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg UNITS V V V A W W/oC oC oC oC 300 260 CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS ID = 250A, VGS = 0V, Figure 13 50 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A, Figure12 1 - 2 V VDS = 40V, VGS = 0V - - 1 A Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current VDS = 40V, VGS = 0V, TC = 150oC - - 50 A VGS = 10V - - 100 nA ID = 14A, VGS = 5V, Figures 9, 11 - - 0.100 VDD = 25V, ID = 7A, RL = 3.57, VGS = 5V, RGS = 0.6 - - 60 ns - 13 - ns - 24 - ns td(OFF) - 42 - ns tf - 16 - ns - - 100 ns - - 40 nC - - 25 nC - - 1.5 nC IGSS Drain to Source On Resistance (Note 2) rDS(ON) Turn-On Time t(ON) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Turn-Off Time TEST CONDITIONS t(OFF) Total Gate Charge Gate Charge at 5V Threshold Gate Charge Qg(TOT) VGS = 0V to 10V Qg(5) VGS = 0V to 5V Qg(TH) VGS = 0V to 1V Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJA RJA VDD = 40V, ID = 14A, RL = 2.86 Figures 20, 21 VDS = 25V, VGS = 0V, f = 1MHz Figure 14 - 670 - pF - 185 - pF CRSS - 50 - pF RJC - - 3.125 oC/W TO-251 - - 100 oC/W TO-252 - - 100 oC/W MIN TYP MAX UNITS ISD = 14A - - 1.5 V ISD = 14A, dISD/dt = 100A/s - - 125 ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Width 300ms, Duty Cycle 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). (c)2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Typical Performance Curves Unless Otherwise Specified 16 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 12 8 4 0.2 0 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 150 0 175 25 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE 2 Z JC, NORMALIZED THERMAL IMPEDANCE 1 0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z JC x R JC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE TC = 25oC TJ = MAX. RATED 100s 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 10ms 100ms DC 0.5 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA (c)2004 Fairchild Semiconductor Corporation 100 200 IDM, PEAK CURRENT CAPABILITY (A) ID, DRAIN CURRENT (A) 100 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 VGS = 5V TC = 25oC 10 -5 10 10-4 VGS = 10V 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 FIGURE 5. PEAK CURRENT CAPABILITY RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Typical Performance Curves Unless Otherwise Specified (Continued) 35 VGS = 10V VGS = 5V 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 50 STARTING TJ = 25oC 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) 0.01 VGS = 4V 25 PULSE DURATION = 80s, TC = 25oC DUTY CYCLE = 0.5% MAX. 20 15 VGS = 3V 10 5 If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 VGS = 4.5V 0.1 1 tAV, TIME IN AVALANCHE (ms) 0 10 VGS = 2.5V 1.5 0 3.0 4.5 6.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 7.5 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 7. SATURATION CHARACTERISTICS 250 35 -55oC 30 ID = 7A 25oC rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (m) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING 175oC 25 20 15 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VDD = 15V 5 1.5 3.0 4.5 6.0 VGS, GATE TO SOURCE VOLTAGE (V) 50 NORMALIZED DRAIN TO SOURCE ON RESISTANCE td(OFF) 100 tr 80 tf 60 40 td(ON) 20 0 20 30 40 10 RGS , GATE TO SOURCE RESISTANCE () FIGURE 10. SWITCHING TIME vs GATE RESISTANCE (c)2004 Fairchild Semiconductor Corporation 3.0 3.5 4.0 4.5 VGS , GATE TO SOURCE VOLTAGE (V) 5.0 FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 120 0 0 2.5 2.5 VDD = 25V, ID = 14A, RL = 3.57 ID = 3.5A 100 7.5 140 SWITCHING TIME (ns) 150 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. FIGURE 8. TRANSFER CHARACTERISTICS 160 ID = 28A 200 0 0 ID = 14A 50 2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGS = 10V, ID = 14A 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 11. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Typical Performance Curves 2.0 VGS = VDS, ID = 250A ID = 250A NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.5 1.0 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 0 -80 -40 0 40 80 120 200 160 FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 50 VDS , DRAIN TO SOURCE VOLTAGE (V) CISS C, CAPACITANCE (pF) 0.5 TJ , JUNCTION TEMPERATURE (oC) 800 600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD COSS 200 CRSS 40 5 10 15 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 5 VDD = BVDSS VDD = BVDSS 4 30 3 20 2 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS RL = 3.57 IG(REF) = 0.4mA VGS = 5V 10 1 0 0 0 1.0 200 FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 1.5 0 I G ( REF ) 20 ------------------------I G ( ACT ) 25 VGS , GATE TO SOURCE VOLTAGE (V) NORMALIZED GATE THRESHOLD VOLTAGE 2.0 Unless Otherwise Specified (Continued) I G ( REF ) 80 ------------------------I G ( ACT ) t, TIME (s) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260, FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 15. TRANSCONDUCTANCE vs DRAIN CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG VDS IAS VDD VDD - VGS DUT 0V tP IAS 0 0.01 tAV FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT (c)2004 Fairchild Semiconductor Corporation FIGURE 17. UNCLAMPED ENERGY WAVEFORMS RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM Test Circuits and Waveforms (Continued) tON tOFF td(ON) VDS td(OFF) tr VDS tf 90% 90% RL VGS + - DUT 10% 10% 0 VDD 90% RGS VGS VGS 0 50% 10% FIGURE 18. SWITCHING TIME TEST CIRCUIT 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD DUT IG(REF) VGS = 5V VGS - VGS = 1V 0 Qg(TH) IG(REF) 0 FIGURE 20. GATE CHARGE TEST CIRCUIT (c)2004 Fairchild Semiconductor Corporation FIGURE 21. GATE CHARGE WAVEFORMS RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM PSPICE Electrical Model .SUBCKT RFP14N05L 2 1 3 ; rev 9/15/94 CA 12 8 1.464e-9 CB 15 14 1.64e-9 CIN 6 8 6.17e-10 DPLCAP RSCL1 RSCL2 ESG + GATE 1 9 6 8 ESCL LGATE RGATE 11 RDRAIN 16 VTO + 21 EVTO 20 + 18 + DBODY EBREAK 17 18 MOS2 6 MOS1 8 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE S2A S1A 12 S1A S1B S2A S2B DBREAK 50 MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 33.1e-3 RGATE 9 20 5.85 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 14.3e-3 RVTO 18 19 RVTOMOD 1 + 51 5 51 EBREAK 11 7 17 18 65.35 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 LDRAIN 2 5 1e-9 LGATE 1 9 5.68e-9 LSOURCE 3 7 5.35e-9 DRAIN 2 LDRAIN DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD IT 8 17 1 5 10 S1B RBREAK 15 14 13 13 8 17 18 S2B RVTO 13 CA CB + EGS 6 8 IT + 14 EDS 5 8 19 VBAT + 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD VBAT 8 19 DC 1 VTO 21 6 0.485 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/46,7))} .MODEL DBDMOD D (IS = 2.23e-13 RS = 1.15e-2 TRS1 = 1.64e-3 TRS2 = 7.89e-6 CJO = 6.83e-10 TT = 3.68e-8) .MODEL DBKMOD D (RS = 3.8e-1 TRS1 = 1.89e-3 TRS2 = 1.13e-5) .MODEL DPLCAPMOD D (CJO = 25.7e-11 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 1.935 KP = 18.89 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 7.18e-4 TC2 = 1.53e-6) .MODEL RDSMOD RES (TC1 = 4.45e-3 TC2 = 2.9e-5) .MODEL RSCLMOD RES (TC1 = 2.8e-3 TC2 = 6.0e-6) .MODEL RVTOMOD RES (TC1 = -1.7e-3 TC2 = -2.0e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.55 VOFF= -1.55) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.55 VOFF= -3.55) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.55 VOFF= 2.45) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.45 VOFF= -2.55) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley. (c)2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM Rev. C0 RFD14N05L, RFD14N05LSM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) GTOTM Quiet SeriesTM CTLTM TINYOPTOTM IntelliMAXTM RapidConfigureTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) VCXTM SuperSOTTM-8 OPTOLOGIC(R) FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2004 Fairchild Semiconductor Corporation RFD14N05L, RFD14N05LSM Rev. C0 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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