MMBT3906W General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40 -5.0 -200 Unit Vdc Vdc Vdc mAdc Thermal Characteristics Characteristics Symbol Max Unit PD 150 mW R qJA 833 C/W TJ,Tstg -55 to +150 C Total Device Dissipation TA=25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Device Marking MMBT3906W=2A Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (IC=-10 Adc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE=-10 Adc, IC=0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc) IBL - -50 nAdc Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc) ICEX - -50 nAdc Off Characteristics 1. Device mounted FR4 glass epoxy printed circuit board suing the minimun recommended footprint. 2. Pulse Test:Pulse Width < = 300 S, Duty Cycle < = 2.0%. WEITRON http://www.weitron.com.tw MMBT3906W Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max 60 - 80 - 100 300 60 - 30 - Unit On Characteristics (2) DC Current Gain (IC= -0.1 mAdc, VCE= -1.0Vdc) (IC= -1.0 mAdc, VCE= -1.0 Vdc) (IC= -10 mAdc, VCE= -1.0Vdc) (IC= -50 mAdc, VCE= -1.0Vdc) HFE (IC= -100 mAdc, VCE= -1.0Vdc) - Collector-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0mAdc) (IC= -50 mAdc, IB= -5.0mAdc) VCE(sat) - -0.25 -0.4 Vdc Base-Emitter Saturation Voltage (2) (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) VBE(sat) -0.65 - -0.85 -0.95 Vdc Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -20 Vdc, f=100MHz) fT 250 - MHz Cobo - 4.5 pF Cibo - 10 pF hie 2.0 12 k ohms Voltage Feeback Radio (VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz) hre 0.1 10 x 10-4 Small-Signal Current Gain (VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz) hfe 100 400 - Output Admittance (VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz) hoe 3.0 60 mhos Noise Figure (VCE= -5.0Vdc IC= -100 Adc, , RS=1.0k ohms, f=1.0kHz) NF - 4.0 dB Output Capacitance (VCB= -5.0 Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB= -0.5 Vdc, IC=0, f=1.0MHz) Input Impedance (VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz) Switching Characteristics Delay Time Rise Time Storage Time Fall Time (Vcc= -3.0 Vdc, VBE= 0.5 Vdc Ic= -10 mAdc, IB1= -1.0 mAdc) td - 35 tr - 35 (Vcc= -3.0 Vdc, Ic= -10 mAdc, IB1=IB2= -1.0 mAdc) ts - 225 tf - 75 WEITRON http://www.weitron.com.tw ns ns MMBT3906W 3V +9.1V 3V <1ns 275 <1ns 275 10k +0.5V 10k 0 CS<4 pF 10.6V 300 ns 10<t1<500s DUTY CYCLE=2% CS<4 pF 1N916 DUTY CYCLE=2% 10.9V t1 *Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure . Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ=125 C 10 5000 7.0 3000 VCC=40V IC/IB=10 2000 5.0 Cobo Q CHARGE (pC) CAPACITANCE (pF) TJ=25 C Cibo 3.0 2.0 1000 700 500 300 200 QT Q 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 40 1.0 2.0 3.0 20 30 50 70 100 200 Figure 4. Charge Data Figure 3. Capacitance 500 500 300 IC/IB=10 300 200 tf FALL TIME (ns) 200 100 TIME (ns) 7.0 10 IC COLLECTOR CURRENT (mA) REVERSEM BIAS (VOLTS) 70 tr@VCC=3.0V 50 15V 30 20 40V 2.0V 10 7 5 5.0 A td@VOB=0V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTOP CURRENT (mA) Figure 5. Turn-On Time WEITRON http://www.weitron.com.tw 200 IC/IB=20 VCC=40V IB1=IB2 100 70 50 30 20 IC/IB=10 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC COLLECTYOR CURRENT (mA) Figure 6.Fall Time 200 MMBT3906W TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz) 12 SOURCE RESISTANCE=2001/2 IC=1.0 mA 4.0 SOURCE RESISTANCE=2001/2 IC=0.5 mA 3.0 SOURCE RESISTANCE=2.0 k IC=50 A 2.0 10 SOURCE RESISTANCE=2.0 k IC=100 A 1.0 0 0.1 0.2 0.4 1.0 2.0 8 IC=100A 6 4 IC=50A 2 4.0 10 20 40 0 100 0.1 0.2 f FREQUENCY (kHZ) 4.0 10 20 40 100 100 hoe OUTPUT ADMITTANCE ( mhos) 200 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 70 50 30 20 10 7 5 1.0 0.1 0.2 IC COLLECTOR CURRENT (mA) 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0 IC COLLECTOR CURRENT(mA) Figure 10. Input Impedance Figure 9. Current Gain 10 hfe VOLTAGE FEEBACK RATIO (X 10x4) 20 hfe INPUT IMPEDANCE (k OHMS) 2.0 (VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C) 300 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 Figure 8. h PARAMETERS hfe DC CURRENT GAIN 0.4 Rg SOURCE RESISTANCE (k OHMS) Figure 7. 30 IC=0.5mA IC=1.0mA f=1.0 kHz NF NOISE FIGURE (dB) NF NOISE FIGURE (dB) 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC COLLECTOR CURRENT (MA) Figure .11 Input Impedance WEITRON http://www.weitron.com.tw 5.0 7.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC COLLECTOR CURRENT (mA) Figure 12. Votage Feeback Ratio 5.0 7.0 10 MMBT3906W hFE DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ=+125 C VCE=10V +25 C 1.0 0.7 -55 C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC COLLECTOR CURRENT (mA) VCE COLLECTOR EMITTER VOLTAGE (VOLTS) Figurer 13. DC Current Gain 1.0 TJ=25 C 0.8 IC=1.0mA 30mA 10mA 100mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB BASE CURRENT (mA) 1.0 VBE(sat) @ IC/IB=10 V VOLTAGE (VOLTS) TJ=25 C 0.8 VBE(sat) @VCE=1.0V 0.6 0.4 VCE(sat) @ IC/IB=10 0.2 0 10 20 50 10 20 50 IC COLLECTOR CURRENT (mA) Figure 15. "ON" Voltages WEITRON http://www.weitron.com.tw 100 200 qv TEMPERATURE COEFFICIENTS (mVAC) Figure 14. Collector Saturation Region 1.0 0.5 +25 C TO +125 C qVC FOR VCE(sat) 0 -55 C TO +25 C -0.5 +25 C TO +125 C -1.0 -55 C TO +25 C -1.5 -2.0 qVB FOR VBE(sat) 0 20 40 60 80 100 120 140 160 IC COLLECTOR CURRENT (mA) Figure 16.Temperature Coefficients 180 200 MMBT3906W SOT-323 Outline Demensions Unit:mm A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25