General Purpose Transistor
PNP Silicon
2. Pulse Test:Pulse Width 300 µS, Duty Cycle 2.0%.
M aximum R atings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
-40
-40
-5.0
Unit
Vdc
Vdc
Vdc
mAdc
-200
Rating
MMBT3906W=2A
Device Marking
Collector-Emitter Breakdown Voltage(2) (IC=-1.0mAdc.IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-10 µAdc, IC=0)
Base Cutoff Current (VCE=-30 Vdc, VEB =-3.0 Vdc)
Collector Cutoff Current (VCE=-30Vdc, VEB=-3.0Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
-50
-50
Vdc
Vdc
Vdc
nAdc
nAdc
Off Characteristics
MMBT3906W
1
2
3
BASE
COLLECTOR
EMITTER
-40
-40
-5.0
-
-
-
-
-
<
=<
=
Characteristics Symbol Min Max Unit
Electrical Characteristics (TA=25 C Unless Otherwise noted)
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WEITRON
Total Device Dissipation
TA=25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
Characteristics
TJ,Tstg
PD
Symbol Max
150
833
-55 to +150
Unit
mW
C/W
C
Thermal Characteristics
R JAq
SOT-323(SC-70)
1
2
3
1. Device mounted FR4 glass epoxy printed circuit board
suing the minimun recommended footprint.
MMBT3906W
Small-signal Characteristics
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE= -20 Vdc, f=100MHz)
Output Capacitance
(VCB= -5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= -0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
(VCE= -10 Vdc IC=-1.0 mAdc, f=1.0 kHz)
Voltage Feeback Radio
(VCE= -10Vdc IC=1.0 mAdc, f=1.0 kHz)
Small-Signal Current Gain
(VCE= -10Vdc IC=1.0 mAdc, , f=1.0 kHz)
Output Admittance
(VCE= -10Vdc IC=1.0 mAdc, f=-1.0kHz)
Noise Figure
(VCE= -5.0Vdc IC= -100 µAdc, , RS=1.0k ohms, f=1.0kHz)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
250
-
-
-
-
0.1
2.0
100
3.0
4.5
4.0
MHz
pF
pF
k ohms
x 10-4
-
µmhos
dB
60
400
10
12
10
DC Current Gain
(IC= -0.1 mAdc, VCE= -1.0Vdc)
(IC= -1.0 mAdc, VCE= -1.0 Vdc)
(IC= -10 mAdc, VCE= -1.0Vdc)
(IC= -50 mAdc, VCE= -1.0Vdc)
(IC= -100 mAdc, VCE= -1.0Vdc)
Collector-Emitter Saturation Voltage (2)
(IC= -10 mAdc, IB= -1.0mAdc)
(IC= -50 mAdc, IB= -5.0mAdc)
Base-Emitter Saturation Voltage (2)
(IC= -10 mAdc, IB= -1.0 mAdc)
(IC= -50 mAdc, IB= -5.0 mAdc)
HFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
60
80
100
60
30
-
-
On Characteristics
-0.65
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
(2)
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
(Vcc= -3.0 Vdc, VBE= 0.5 Vdc
Ic= -10 mAdc, IB1= -1.0 mAdc)
(Vcc= -3.0 Vdc,
Ic= -10 mAdc, IB1=IB2= -1.0 mAdc)
td
tr
ts
tf
-
-
-
-
35
35
225
75
ns
ns
WEITRON
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Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Unit
Min Max
MMBT3906W
WEITRON
<1ns
+0.5V
10.6V 300 ns
DUTY CYCLE=2%
10k
CS<4 pF
3V
275
+9.1V <1ns
0
10<t1<500µs t110.9V
DUTY CYCLE=2%
10k
1N916
275
CS<4 pF
3V
*Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure . Storage and Fall Time
Equivalent Test Circuit
Cobo
Cibo
Figure 3. Capacitance
REVERSEM BIAS (VOLTS)
CAPACITANCE (pF)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40
10
7.0
5.0
3.0
2.0
1.0
Q T
Q
A
VCC=40V
IC/IB=10
Figure 4. Charge Data
IC COLLECTOR CURRENT (mA)
Q CHARGE (pC)
5000
3000
2000
1000
500
300
700
100
70
50
200
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
TYPICAL TRANSIENT CHARACTERISTICS
TJ=25 C TJ=125 C
Figure 6.Fall Time
IC COLLECTYOR CURRENT (mA)
tf FALL TIME (ns)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
VCC=40V
IB1=IB2
IC/IB=20
IC/IB=10
Figure 5. Turn-On Time
IC COLLECTOP CURRENT (mA)
TIME (ns)
15V
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
500
300
200
100
70
50
30
20
10
7
5
IC/IB=10
tr@VCC=3.0V
td@VOB=0V
40V
2.0V
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Figure .11 Input Impedance
IC COLLECTOR CURRENT (MA)
hfe INPUT IMPEDANCE (k OHMS)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
Figure 12. Votage Feeback Ratio
IC COLLECTOR CURRENT (mA)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
hfe VOLTAGE FEEBACK RATIO (X 10x4)
MMBT3906W
WEITRON
Figure 10. Input Impedance
IC COLLECTOR CURRENT(mA)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0
hoe OUTPUT ADMITTANCE (µ mhos)
100
70
50
30
20
10
7
5
Figure 9. Current Gain
IC COLLECTOR CURRENT (mA)
hfe DC CURRENT GAIN
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 1.0
300
200
100
70
50
30
h PARAMETERS (VCE= -10 Vdc, f= 1.0 kHz, TA= 25 C)
Rg SOURCE RESISTANCE (k OHMS)
Figure 8.
NF NOISE FIGURE (dB)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
12
10
8
6
4
2
0
f=1.0 kHz IC=1.0mA IC=0.5mA
IC=100µA
f FREQUENCY (kHZ)
NF NOISE FIGURE (dB)
Figure 7.
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100
5.0
4.0
3.0
2.0
1.0
0
SOURCE RESISTANCE=200½
IC=1.0 mA
SOURCE RESISTANCE=200½
IC=0.5 mA
SOURCE RESISTANCE=2.0 k
IC=50 µA
SOURCE RESISTANCE=2.0 k
IC=100 µA
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE= -5.0 Vdc, TA= 25 C, Bandwidth= 1.0Hz)
IC=50µA
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MMBT3906W
WEITRON
http://www.weitron.com.tw
Figure 14. Collector Saturation Region
IB BASE CURRENT (mA)
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
1.0
0.8
0.6
0.4
0.2
0
VCE COLLECTOR EMITTER VOLTAGE (VOLTS)
IC=1.0mA 10mA 30mA 100mA
TJ=25 C
TYPICAL STATIC CHARACTERISTICS
Figurer 13. DC Current Gain
IC COLLECTOR CURRENT (mA)
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2.0
1.0
0.7
0.5
0.3
0.2
0.1
hFE DC CURRENT GAIN (NORMALIZED)
TJ=+125 C
+25 C
-55 C
VCE=10V
Figure 16.Temperature Coefficients
IC COLLECTOR CURRENT (mA)
qv TEMPERATURE COEFFICIENTS (mVAC)
qVC FOR VCE(sat)
FOR VBE(sat)
qVB
0 20 40 60 80 100 120 140 160 180 200
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
+25 C TO +125 C
+25 C TO +125 C
-55 C TO +25 C
-55 C TO +25 C
Figure 15. "ON" Voltages
IC COLLECTOR CURRENT (mA)
V VOLTAGE (VOLTS)
10 20 50 10 20 50 100 200
1.0
0.8
0.6
0.4
0.2
0
TJ=25 C VBE(sat) @ IC/IB=10
VCE(sat) @ IC/IB=10
VBE(sat) @VCE=1.0V
MMBT3906W
WEITRON
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Unit:mm
SOT-323 Outline Demensions
A
B
D
EG
M
L
H
J
TOP V IE W
K
C
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
SOT-323
