A2T21H360--24SR6
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 63 W asymmetrical Doherty RF power LDMOS transistor is designed
for cellular base station applications covering the frequency range of 2110 to
2170 MHz.
2100 MHz
Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQA = 500 mA, VGSB =0.5Vdc,P
out = 63 W Avg., Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz 16.2 51.6 7.9 –28.5
2140 MHz 16.2 51.8 7.9 –28.8
2170 MHz 16.1 50.9 7.9 –29.5
Features
Advanced High Performance In--Package Doherty
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: A2T21H360--24S
Rev. 0, 1/2015
Freescale Semiconductor
Technical Data
2110–2170 MHz, 63 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
A2T21H360--24SR6
NI--1230S--4L2L
(Top View)
RFoutA/VDSA
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
VBWA(1)
6
3
15
24
Carrier
Peaking
Figure 1. Pin Connections
VBWB(1)
1. Device cannot operate with the VDD current
supplied through pin 3 and pin 6.
Freescale Semiconductor, Inc., 2015.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +150 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 278
1.2
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 73C, 63 W Avg., W--CDMA, 28 Vdc, IDQA = 500 mA, VGSB =0.5Vdc,
2140 MHz
RJC 0.33 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =32Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics -- Side A (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 140 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 500 mAdc, Measured in Functional Test)
VGSA(Q) 1.4 1.9 2.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.4Adc)
VDS(on) 0.1 0.2 0.3 Vdc
On Characteristics -- Side B (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D= 240 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=2.4Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
A2T21H360--24SR6
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 500 mA, VGSB =0.5Vdc,
Pout = 63 W Avg., f = 2140 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 15.6 16.2 18.6 dB
Drain Efficiency D49.2 51.8 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.9 —dB
Adjacent Channel Power Ratio ACPR —–28.8 –27.2 dBc
Load Mismatch (2) (In Freescale Doherty Test Fixture, 50 ohm system) IDQA = 500 mA, VGSB = 0.5 Vdc, f = 2140 MHz
VSWR 10:1 at 28 Vdc, 288 W Pulse Output Power
(3 dB Input Overdrive from 363 W Pulse Rated Power)
No Device Degradation
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 500 mA, VGSB =0.5Vdc,
2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —301(3) — W
Pout @ 3 dB Compression Point (4) P3dB —400 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
—–27 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —100 —MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =63WAvg. GF—0.2 —dB
Gain Variation over Temperature
(–30Cto+85C)
G — 0.012 —dB/C
Output Power Variation over Temperature
(–30Cto+85C) (3)
P1dB —0.002 —dB/C
1. Part internally matched both on input and output.
2. Measurements made with device in an asymmetrical Doherty configuration.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
4
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
Figure 2. A2T21H360--24SR6 Test Circuit Component Layout
VGGB
AFT21H360--4WS
Rev. 3
D61817
VGGA
VDDA VDDB
R2
C1
C2
R4 C10
C14
C
P
C3
C4
Z1
R1 C7 C6
C5
R5
C8
C9
R3
C11 C17 C18
C20
C16 C15
C13
C12
C19
CUT OUT AREA
Table 5. A2T21H360--24SR6 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C9, C10, C11, C12, C18 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C2, C8, C13, C17 9.1 pF Chip Capacitors ATC100B9R1CT500XT ATC
C3, C5, C15 9.1 pF Chip Capacitors ATC600F9R1BT250XT ATC
C4 0.5 pF Chip Capacitor ATC600F0R5BT250XT ATC
C6 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC
C7 1.1 pF Chip Capacitor ATC600F1R1BT250XT ATC
C14 4.7 pF Chip Capacitor ATC600F4R7BT250XT ATC
C16 0.2 pF Chip Capacitor ATC600F0R2BT250XT ATC
C19, C20 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1 50 , 20 W Chip Resistor C20A5024 Anaren
R2, R3 5.6 K, 1/4 W Chip Resistors CRCW12065K60FKEA Vishay
R4, R5 6.2 , 1/4 W Chip Resistors CRCW12066R20FKEA Vishay
Z1 2000–2300 MHz Band, 90, 5 dB Directional Coupler X3C21P1-05S Anaren
PCB Rogers RO4350B, 0.020,r=3.66 D61817 MTL
A2T21H360--24SR6
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 2110–2170 MHz
PARC (dB)
–2.1
–1.7
–1.8
–1.9
–2
–2.2
2060
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 63 Watts Avg.
15
17
16.8
16.6
–34
53
52
51
50
–29
–30
–31
–32
D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
16.4
16.2
16
15.8
15.6
15.4
15.2
2080 2100 2120 2140 2160 2180 2200 2220
49
–33
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 300
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
–1
–3
40
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 60 80 140
30
60
55
50
45
40
35
DDRAIN EFFICIENCY (%)
100
D
ACPR
PARC
ACPR (dBc)
–36
–24
–26
–28
–32
–30
–34
18
Gps, POWER GAIN (dB)
17.5
17
16.5
16
15.5
15
Gps
–5
1
ACPR
D
PARC
Gps
VDD =28Vdc,P
out = 12 W (PEP), IDQA = 500 mA
VGSB = 0.5 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3--U
IM5--U
IM5--L
IM7--L
IM7--U
IM3--L
100
–1 dB = 30 W
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
–2 dB = 63 W
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,P
out =63W(Avg.)
IDQA = 500 mA, VGSB =0.5Vdc
–3 dB = 87.5 W
VDD =28Vdc,I
DQA = 500 mA, VGSB =0.5Vdc
f = 2140 MHz, Single--Carrier W--CDMA
6
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
TYPICAL CHARACTERISTICS — 2110–2170 MHz
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
8
20
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
16
10 100 400
10
–60
ACPR (dBc)
14
12
10
0
–30
–40
–50
Figure 7. Broadband Frequency Response
6
18
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 500 mA
VGSB =0.5Vdc
14
12
10
GAIN (dB)
16
8
1800 1880 1960 2040 2120 2200 2280 2360 2440
Gain
ACPR
D
2110 MHz
Gps
2170 MHz
2170 MHz
2110 MHz
2140 MHz
2170 MHz
2170 MHz
2140 MHz
2140 MHz
2110 MHz
VDD =28Vdc,I
DQA = 500 mA, VGSB =0.5Vdc
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
A2T21H360--24SR6
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Carrier Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQA = 774 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.58 – j6.92 3.34 + j6.51 2.02 – j4.19 19.3 51.9 155 58.6 –14
2140 4.43 – j7.58 4.13 + j7.07 2.06 – j4.27 19.3 51.9 154 58.2 –15
2170 5.91 – j8.34 5.51 + j7.60 2.07 – j4.36 19.3 51.8 153 57.2 –15
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.58 – j6.92 3.35 + j6.99 1.95 – j4.52 16.9 52.7 184 58.7 –19
2140 4.43 – j7.58 4.25 + j7.68 2.04 – j4.59 17.0 52.6 183 58.3 –20
2170 5.91 – j8.34 5.85 + j8.37 2.03 – j4.68 17.0 52.6 181 57.4 –19
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQA = 774 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.58 – j6.92 3.40 + j6.96 3.99 – j2.11 22.1 49.7 93 69.3 –22
2140 4.43 – j7.58 4.27 + j7.51 3.90 – j2.21 22.0 49.7 93 68.0 –21
2170 5.91 – j8.34 5.82 + j7.92 4.04 – j2.22 22.0 49.5 88 66.1 –20
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.58 – j6.92 3.29 + j7.28 3.58 – j2.55 19.7 50.9 122 69.6 –29
2140 4.43 – j7.58 4.19 + j8.05 3.34 – j2.43 19.7 50.7 119 67.6 –29
2170 5.91 – j8.34 5.96 + j8.77 3.33 – j2.55 19.7 50.8 119 66.4 –28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
Table 8. Peaking Side Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,V
GSB =0.8Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j5.79 2.25 + j5.71 1.80 – j4.30 14.8 54.8 300 53.8 –26
2140 2.86 – j6.24 2.71 + j6.24 1.91 – j4.27 15.2 54.8 300 54.5 –27
2170 3.85 – j6.73 3.68 + j6.78 1.96 – j4.34 15.4 54.8 302 54.3 –28
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j5.79 2.33 + j6.08 1.77 – j4.50 12.6 55.5 353 55.2 –33
2140 2.86 – j6.24 2.94 + j6.66 1.89 – j4.66 12.9 55.4 350 54.6 –34
2170 3.85 – j6.73 4.09 + j7.25 1.95 – j4.72 13.1 55.5 351 54.6 –35
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,V
GSB =0.8Vdc,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j5.79 1.97 + j5.83 4.14 – j3.31 16.4 53.3 215 64.5 –33
2140 2.86 – j6.24 2.41 + j6.35 3.90 – j2.93 16.7 53.4 218 64.4 –34
2170 3.85 – j6.73 3.27 + j6.92 3.73 – j2.68 16.9 53.3 214 64.1 –35
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 2.40 – j5.79 2.14 + j6.14 4.07 – j3.91 14.1 54.1 258 64.2 –40
2140 2.86 – j6.24 2.65 + j6.74 3.90 – j3.32 14.6 54.1 257 64.4 –43
2170 3.85 – j6.73 3.74 + j7.38 3.57 – j3.27 14.7 54.3 267 64.0 –43
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
A2T21H360--24SR6
9
RF Device Data
Freescale Semiconductor, Inc.
P1dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2140 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 8. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
2
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
6
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
P
E
48.5
48
49.5
49
50
50.5
51
51.5
50
51
58
62
56
52
54
6466
P
E
60
52
23
19
22
P
E
21
19.5
20 20.5
21.5
22.5
–18
–16
–14
–12
–20
P
E
–22
–24
–26
–28
60
10
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
P3dB – TYPICAL CARRIER LOAD PULL CONTOURS — 2140 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 12. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
2
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
6
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
P
E
48.5
49
49.5
50
50.5
51
51.5
52
52.5
60
58
54
62
64
56
E66
P
E
16.5 17 17.5 18 18.5
19
19.5
20
20.5
–18
–20
P
E
–22
–24
–26
–28
–30
–32
51
52
P
54
A2T21H360--24SR6
11
RF Device Data
Freescale Semiconductor, Inc.
P1dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2140 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 16. P1dB Load Pull Output Power Contours (dBm)
REAL ()
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
2
Figure 17. P1dB Load Pull Efficiency Contours (%)
REAL ()
Figure 18. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 19. P1dB Load Pull AM/PM Contours ()
REAL ()
6
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
P
E
51
51
51.5
52
52.5
53
53.5
54
54.5
52 56
P
E
48
50
54 58
60
62
64
58
56
13.5
13
P
E
14
14.5 15 15.5
16
16.5
17
–28 –32
P
E
–30
–34
–36
–38
–40
–42
12
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
P3dB – TYPICAL PEAKING LOAD PULL CONTOURS — 2140 MHz
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 20. P3dB Load Pull Output Power Contours (dBm)
REAL ()
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
2
Figure 21. P3dB Load Pull Efficiency Contours (%)
REAL ()
Figure 22. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 23. P3dB Load Pull AM/PM Contours ()
REAL ()
6
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
–6
0
–2
IMAGINARY ()
34
51 7
–1
–4
–5
26
–3
53.5
P
E
51.5
52.5
52
54
54.5
60
58
62
56
64
P
E
51.5
53
55
48
50
52 54
56
58
13.5
11.5
11
P
E
12
12.5 13
14
14.5
15
–34
P
E
–36 –38
–40
–42
–44
–46
–48
A2T21H360--24SR6
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RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
14
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
A2T21H360--24SR6
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RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to
Software & Tools on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Jan. 2015 Initial Release of Data Sheet
16
RF Device Data
Freescale Semiconductor, Inc.
A2T21H360--24SR6
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Document Number: A2T21H360--24S
Rev. 0, 1/2015
